Patent
Post treatment of low k dielectric films
Zhenjiang Cui,Josephine J. Chang,Alexandros T. Demos,Reza Arghavani,Derek R. Witty,Helen R. Armer,Girish Dixit,Hichem M'Saad +7 more
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TLDR
In this article, a method of depositing a low dielectric constant film on a substrate and post-treating the low-dielectric-constant film is provided.Abstract:
A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.read more
Citations
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Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
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Substrate Processing Apparatus
TL;DR: In this article, a bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the booster pump to prevent the exhaust gas from diffusing back to the inside of a process chamber.
Patent
Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
TL;DR: In this paper, a gas channel plate for a semiconductor process module is described, which includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps.
Patent
Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
Raymond Nicholas Vrtis,Mark Leonard O'neill,Jean Louise Vincent,Aaron Scott Lukas,Manchao Xiao,John Anthony Thomas Norman +5 more
TL;DR: A porous organosilica glass (OSG) as discussed by the authors is a single phase of a material represented by the formula Si v O w C x H y F z, where v+w+x+y+z=100, w is from 10 to 65 atomic %, x is from 5 to 30 atomic % and y is from 0 to 50 atomic %.
Patent
Semiconductor processing system and methods using capacitively coupled plasma
Jang-Gyoo Yang,Matthew L. Miller,Xinglong Chen,Kien N. Chuc,Qiwei Liang,Shankar Venkataraman,Dmitry Lubomirsky +6 more
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
References
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Patent
Plasma processes for depositing low dielectric constant films
David Cheung,Wai-Fan Yau,Robert P. Mandal,Shin-Puu Jeng,Kuo-Wei Liu,Yung-Cheng Lu,Michael Barnes,Ralf B. Willecke,Farhad Moghadam,Tetsuya Ishikawa,Tze Wing Poon +10 more
TL;DR: In this article, a method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level is presented.
Patent
Method for densification of CVD carbon-doped silicon oxide films through UV irradiation
TL;DR: Carbon-doped silicon oxide films (SiC x O y ) produced by CVD of an organosilane gas containing at least one silicon carbon bond, are rapidly densified by exposure to ultraviolet radiation.
Patent
Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices
TL;DR: One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k Dielectric films; and (b) e-beam treating the lowerk DieElectric film as discussed by the authors.
Patent
Low dielectric constant material for integrated circuit fabrication
TL;DR: In this article, a method for forming a material with a low dielectric constant, suitable for electrical isolation in integrated circuits, is described, where methylsilane is reacted with hydrogen peroxide to deposit a silicon hydroxide layer incorporating carbon, then treated by exposure to a plasma containing oxygen, and annealing the layer at a temperature of higher than about 450° C or higher.
Patent
Non-thermal process for forming porous low dielectric constant films
Aaron Scott Lukas,Mark Leonard O'neill,Mark Daniel Bitner,Jean Louise Vincent,Raymond Nicholas Vrtis,Eugene Joseph Karwacki +5 more
TL;DR: In this paper, a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film and forming a porous film is described.
Related Papers (5)
Method for curing low dielectric constant film by electron beam
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