Preparation of Al-Cu-Fe thin films by vapor deposition technique from a single source
TL;DR: In this paper, the formation of stable icosahedral Al-Cu-Fe quasicrystalline thin films by thermal vapor deposition techniques (indirect heating and e-beam heating) from a single source was reported.
About: This article is published in Materials Research Bulletin.The article was published on 2002-02-01. It has received 17 citations till now. The article focuses on the topics: Thin film & Deposition (phase transition).
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TL;DR: In this article, three Al-Cu-Fe alloys with compositions of Al60-65Cu20-27.5Fe12.5-15 were prepared by conventional casting and further processed by melt-spinning, and the structures formed were examined to get an insight into the interrelated effects of synthesis, processing and microstructure of alloys.
22 citations
TL;DR: In this article, a microstructural analysis was carried out for AlCo-Fe-Cr feed powder and the coatings sprayed with a high velocity oxy-fuel method using different operation conditions.
20 citations
TL;DR: In this article, multilayer thin films Al/Cu/Fe were deposited in different sequences by sputtering in a triode system and after the deposition the samples were annealed in an inert atmosphere at temperatures up to 600 °C in order to obtain a homogeneous film with the desirable composition Al 62 Cu 25 Fe 13.
16 citations
TL;DR: In this article, the authors performed transmission electron microscopy (TEM) to study the microstructural evolution in Al-Cu-Fe quasicrystalline thin films.
16 citations
TL;DR: In this paper, surfaces of copper substrates were modified with aluminum plasma using cathodic vacuum arc (CVA) physical vapor deposition based technique, and the effect of long and short durations of ion bombardment on the resulting microstructural features of the treated surfaces were studied and discussed.
Abstract: In the present study, surfaces of copper substrates were modified with aluminum plasma using cathodic vacuum arc (CVA) physical vapor deposition based technique. Surface treatments were carried out as a function of bias voltage for various time intervals. The effect of long and short durations of ion bombardment on the resulting microstructural features of the treated surfaces were studied and discussed. It was observed that surface alloying and diffusion processes were enhanced by the application of the ion bombardment and thick (10–15 μm) modified zones were achieved in a relatively short processing time (15–20 min). In the experiment executed with long bombardment duration, the modified zone consisted of a mixture of martensitic β 1 -AlCu 3 phase and (Cu) solid solution, accompanied with a minor amount of γ 1 -Al 4 Cu 9 intermetallic phase, whereas, in the experiment involving short total bombardment duration, the modified surface predominantly consisted γ 1 -Al 4 Cu 9 intermetallic phase, accompanied with martensitic β 1 -AlCu 3 phase at the copper aluminum interface.
9 citations
References
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Book•
01 Jan 1991
TL;DR: A review of materials science can be found in this paper, where the authors describe the properties of thin-film materials and their applications in the following categories: electrical and magnetic properties, optical properties, and material properties.
Abstract: A Review of Materials Science. Vacuum Science and Technology. Physical Vapor Deposition. Chemical Vapor Deposition. Film Formation and Structure. Characterization of Thin Films. Epitaxy. Interdiffusion and Reactions in Thin Films. Mechanical Properties of Thin Films. Electrical and Magnetic Properties of Thin Films. Optical Properties of Thin Films. Metallurgical and Protective Coatings. Modification of Surfaces and Films. Emerging Thin-Film Materials and Applications. Appendixes. Index.
3,257 citations
"Preparation of Al-Cu-Fe thin films ..." refers background in this paper
...To make a rough estimation of the composition of the starting alloy, we have calculated [18] the required composition of Fe in the mother alloy at 2000 K, assuming that the vapor pressures of Cu and Al are almost same at this temperature (see Fig....
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...It is known [18] that when the evaporation technique is used for thin film deposition of metallic alloys, the relative vapor pressures of the constituent elements play an important role....
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TL;DR: In this paper, the electron-diffraction pattern shows icosahedral symmetry and peaks in the x-ray diffraction pattern can be indexed to a mixture of fcc Al and a phase whose reciprocal lattice is described by a sum of icoshedral vectors.
Abstract: We report electron-microscopy and high-resolution x-ray-scattering measurements of rapidly quenched ${\mathrm{Al}}_{6}$Mn. The electron-diffraction pattern shows icosahedral symmetry. Peaks in the x-ray-diffraction pattern can be indexed to a mixture of fcc Al and a phase whose reciprocal lattice is described by a sum of icosahedral vectors. The half-width of the sharpest x-ray peak is 0.01 ${\mathrm{\AA{}}}^{\ensuremath{-}1}$. A comparison is made with current theories of quasicrystalline order.
517 citations
TL;DR: La phase amorphe se transforme en etat quasi-cristallin par deux chemins: thermique et thermique assiste par faisceau d'ions a temperature ambiante.
Abstract: ${\mathrm{Al}}_{84}$${\mathrm{Mn}}_{16}$ multilayer films have been amorphized by room-temperature ion-beam irradiation. The amorphous phase was transformed into the quasicrystalline state through two routes: thermal and ion-beam-assisted thermal. The intensity of the quasicrystalline electron diffraction increases continuously with annealing between 270 and 350 \ifmmode^\circ\else\textdegree\fi{}C. Ion irradiation of the amorphous phase produces a more complete set of icosahedral diffraction lines than thermal annealing.
148 citations
TL;DR: It is demonstrated that the icosahedral phase nucleates in the solid state in preference to crystalline phases of lower free energy, even though the initial material does not have liquidlike icosahed short-range order.
Abstract: We have formed the icosahedral phase in Al/sub 86/Mn/sub 14/, Al/sub 82/Mn/sub 18/, and Al/sub 75.5/Mn/sub 20/Si/sub 4.5/ alloys by the interdiffusion of elemental layers in the solid state. Annealing at 250-425/sup 0/C produced the phase in times as short as 1 min with grains up to approx.14 nm in diameter. Continued annealing transformed the alloy layers into crystalline phases. These results demonstrate that the icosahedral phase nucleates in the solid state in preference to crystalline phases of lower free energy, even though the initial material does not have liquidlike icosahedral short-range order.
99 citations
TL;DR: In this article, the authors show that thin films 3000 A in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers.
Abstract: We show that thin films 3000 A in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers. As for bulk materials, we propose that the icosahedral phase grows by diffusion of the Cu in the Al3Fe layer previously formed by interdiffusion of the Al and Fe layers. These films present high resistivity values comparable to those obtained in bulk samples of high structural quality.
65 citations