Journal ArticleDOI
Preparation of bismuth telluride thin films through interfacial reaction
Chien-Neng Liao,Tong-Her She +1 more
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TLDR
In this article, the authors presented an approach to prepare bismuth telluride thin films with reasonable thermoelectric properties and very flat film morphology using periodic Bi/Te multilayer structures.About:
This article is published in Thin Solid Films.The article was published on 2007-07-31. It has received 34 citations till now. The article focuses on the topics: Bismuth telluride & Thermoelectric materials.read more
Citations
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Journal ArticleDOI
Semiconductor Nanocrystals Functionalized with Antimony Telluride Zintl Ions for Nanostructured Thermoelectrics
Maksym V. Kovalenko,Boris Spokoyny,Jong-Soo Lee,Marcus Scheele,Andrew Weber,Susanthri Perera,Daniel Landry,Dmitri V. Talapin +7 more
TL;DR: Characterization of the TE properties of nanostructured TE materials showed that their Seebeck coefficients, electrical and thermal conductivities, and ZT values compared favorably with those of previously reported solution-processed TE materials.
Journal ArticleDOI
Review of current high-ZT thermoelectric materials
Jiangtao Wei,Liangliang Yang,Zhe Ma,Peishuai Song,Mingliang Zhang,Jing Ma,Fuhua Yang,Xiaodong Wang +7 more
TL;DR: In this paper, the experimental and theoretical achievements of seven kinds of thermoelectric materials, including BiTe series, SnSe series, CuSe series and Graphdiyne series, were reviewed.
Journal ArticleDOI
Low Resistance Ohmic Contacts to Bi2Te3 Using Ni and Co Metallization
TL;DR: A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi 2 Te 3 is presented in this article.
Journal ArticleDOI
Thermoelectric properties and micro-structure characteristics of annealed N-type bismuth telluride thin film
Cai Zhaokun,Ping Fan,Zhuanghao Zheng,Peng-juan Liu,Tian-bao Chen,Xing-Min Cai,Jingting Luo,Guangxing Liang,Dongping Zhang +8 more
TL;DR: In this article, N-type bismuth telluride (Bi2Te3) thermoelectric thin films were deposited by co-sputtering simple substance Te and Bi targets.
Journal ArticleDOI
Annealing temperature influence on electrical properties of ion beam sputtered Bi2Te3 thin films
TL;DR: In this article, anon beam sputtering was used to deposit n-type fine-grained Bi 2 Te 3 thin films on BK7 glass substrates at room temperature.
References
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Journal ArticleDOI
Electrical and optical properties of some M2v−bN3vi−b semiconductors
TL;DR: In this article, a number of compounds of V−B and VI−B elements, with chemical formula M 2 v − b N 3 vi − b been synthesized as single crystals of fairly good purity.
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Thermal properties of high quality single crystals of bismuth telluride—Part I: Experimental characterization
TL;DR: A thermoelectric characterization of samples of bismuth telluride of both n - and p -type is carried out, as a function of stoichiometric deviation as mentioned in this paper.
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Evidence for the existence of antistructure defects in bismuth telluride by density measurements
G.R. Miller,Che-Yu Li +1 more
TL;DR: In this paper, the existence of antistructure defects with an approximate energy of formation of 0.40 eV for n and p type bismuth telluride in equilibrium with various liquid compositions.
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Effect of deposition temperature on the structural and thermoelectric properties of bismuth telluride thin films grown by co-sputtering
TL;DR: In this article, thermoelectric bismuth telluride thin films were prepared on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering.
Journal ArticleDOI
Growth of p- and n-type bismuth telluride thin films by co-evaporation
TL;DR: In this article, both n and p-type bismuth telluride thin films have been deposited by co-evaporator on glass substrates and the conditions for deposition have been investigated as a function of substrate temperature (Ts) and flux ratio (Fr=F(Bi)/F(Te)) and optimised to achieve a high thermoelectric power factor.