Present status of amorphous In–Ga–Zn–O thin-film transistors
Reads0
Chats0
TLDR
Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.About:
This article is published in Science and Technology of Advanced Materials.The article was published on 2010-09-10 and is currently open access. It has received 1573 citations till now. The article focuses on the topics: Oxide thin-film transistor & Indium gallium zinc oxide.read more
Citations
More filters
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
Sunkook Kim,Sunkook Kim,Aniruddha Konar,Wan Sik Hwang,Jong Hak Lee,Jiyoul Lee,Jaehyun Yang,Changhoon Jung,Hyoungsub Kim,Ji-Beom Yoo,Jae-Young Choi,Yong Wan Jin,Sang Yoon Lee,Debdeep Jena,Woong Choi,Woong Choi,Kinam Kim +16 more
TL;DR: This is the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors and their results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.
Journal ArticleDOI
Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
Yong-Hoon Kim,Jae Sang Heo,Taehyeong Kim,Sungjun Park,Myung-Han Yoon,Jiwan Kim,Min Suk Oh,Gi-Ra Yi,Yong-Young Noh,Sung Kyu Park +9 more
TL;DR: Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature, which is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that ofthin- film transistors based on thermally annealed materials.
Journal ArticleDOI
Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
TL;DR: A review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS) is provided in this paper.
Journal ArticleDOI
Recent Progress in Materials and Devices toward Printable and Flexible Sensors
TL;DR: In this review, recent progress in materials and devices for future wearable sensor technologies for bio and medical applications are reported.
References
More filters
Journal ArticleDOI
A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
BookDOI
Amorphous and liquid semiconductors
TL;DR: In this article, the nature of the amorphous state and the electronic properties of the Amorphous Semi-conductors have been investigated in the context of liquid semiconductors.