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Probing the impact of energetic argon ions on the structural properties of ZnO:Al/TiO2 heterostructures

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TLDR
In this paper, the efficacy of ion beam induced self-healing in stoichiometry of Al-doped ZnO/TiO2 heterostructure has been investigated using a variety of experimental techniques, notably by cross-sectional transmission electron microscopy.
Abstract
The efficacy of 50 keV Ar+-ion irradiation toward the interfacial and stoichiometric engineering of strained Al-doped ZnO (AZO)/TiO2 heterostructure is systematically investigated using a variety of experimental techniques, notably by cross-sectional transmission electron microscopy. Glancing-angle X-ray diffraction evidences the release of in-plane compressive stress from the as-grown AZO/TiO2 bilayer structure at a critical fluence of 1 × 1016 ions/cm2, and we discuss in the light of microcracks and voids formation combined with the dewetting phenomenon. Ion irradiation also leads to an improvement of stoichiometry in both top AZO and underneath amorphous TiO2 layers, as manifested by depth-dependent energy dispersive X-ray spectroscopy owing to the large diffusion of oxygen toward the AZO/TiO2 interfacial region through the AZO defect sites. Such ion beam induced self-healing in stoichiometry of AZO/TiO2 heterostructure has been attributed to a conjunction of sputtering and diffusion phenomena involving the constituent elements (Zn, Ti, and O). Further increase in ion fluence up to 5 × 1016 ions/cm2 causes a complete deterioration of the heterostructure with the formation of a graded layer via intermixing of these elements, followed by the evolution of voids.

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Journal ArticleDOI

TiO2 Photocatalysis: A Historical Overview and Future Prospects

TL;DR: In this paper, the progress of the scientific research on TiO2 photocatalysis as well as its industrial applications are reviewed, and future prospects of this field mainly based on the present authors' work.
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Plasma source ion-implantation technique for surface modification of materials

TL;DR: Plasma source ion implantation (PSII) as discussed by the authors is a new ion-implantation technique which has been optimized for surface modification of materials such as metals, plastics, and ceramics.
Journal ArticleDOI

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.

TL;DR: A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented andCrystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces.
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Reduction of oxides of iron, cobalt, titanium and niobium by low-energy ion bombardment

TL;DR: In this paper, changes in the elemental chemical states associated with some transition metal oxides have been examined using XPS, when the oxides were subjected to progressive periods of argon ion bombardment.
Journal ArticleDOI

First-principles study of native defects in anatase TiO2

TL;DR: In this paper, the authors used pseudopotential calculations based on density functional theory (DFT) to investigate four low-energy native point defects in anatase and found that all of them have energy levels inside the DFT band gap.
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