Process technology for silicon carbide devices
01 Jan 2002-
TL;DR: Zetterling, S.M.Ostling and S.J.Pearton as mentioned in this paper, S.Sveinbjornsson, S.-K.Lee, and M.
Abstract: Introduction 1 Advantages of SiC C.-M.Zetterling and M.Ostling 2 Bulk and epitaxial growth of SiC N.Nordell 3 Ion implantation and diffusion in SiC A.Schoner 4 Wet and dry etching of SiC S.J.Pearton 5 Thermally grown and deposited thermoelectrics E.O.Sveinbjornsson and C.-M.Zetterling 6 Schottky and ohmic contacts to SiC C.-M.Zetterling, S.-K.Lee and M.Ostling 7 Devices in SiC C.-M.Zetterling, S.M.Koo and M.Ostling Appendix 1: Other resources Appendix 2: Glossary Index
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TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Abstract: Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.
750 citations
TL;DR: It is demonstrated that several defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlled in the time domain at temperatures ranging from 20 to 300 kelvin.
Abstract: Electronic spins in semiconductors have been used extensively to explore the limits of external control over quantum mechanical phenomena. A long-standing goal of this research has been to identify or develop robust quantum systems that can be easily manipulated, for future use in advanced information and communication technologies. Recently, a point defect in diamond known as the nitrogen-vacancy centre has attracted a great deal of interest because it possesses an atomic-scale electronic spin state that can be used as an individually addressable, solid-state quantum bit (qubit), even at room temperature. These exceptional quantum properties have motivated efforts to identify similar defects in other semiconductors, as they may offer an expanded range of functionality not available to the diamond nitrogen-vacancy centre. Notably, several defects in silicon carbide (SiC) have been suggested as good candidates for exploration, owing to a combination of computational predictions and magnetic resonance data. Here we demonstrate that several defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlled in the time domain at temperatures ranging from 20 to 300 kelvin. Using optical and microwave techniques similar to those used with diamond nitrogen-vacancy qubits, we study the spin-1 ground state of each of four inequivalent forms of the neutral carbon-silicon divacancy, as well as a pair of defect spin states of unidentified origin. These defects are optically active near telecommunication wavelengths, and are found in a host material for which there already exist industrial-scale crystal growth and advanced microfabrication techniques. In addition, they possess desirable spin coherence properties that are comparable to those of the diamond nitrogen-vacancy centre. This makes them promising candidates for various photonic, spintronic and quantum information applications that merge quantum degrees of freedom with classical electronic and optical technologies.
669 citations
Book•
23 Sep 2014
TL;DR: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications is provided in this paper. But the authors focus on the SiC Schottky barrier diodes (SBDs) and do not provide an in-depth reference for scientists and engineers working in this field.
Abstract: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field . Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:
658 citations
TL;DR: In this article, the basic operation principle for MEMS with wide band gap semiconductors is described, and the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.
Abstract: With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.
352 citations
TL;DR: In this paper, the authors reviewed the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport in 4H-SiC power metal oxide Semiconductor Field Effect Transistors.
Abstract: A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO2/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.
220 citations