Process variation study of Ground Plane SOI MOSFET
Citations
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Cites background from "Process variation study of Ground P..."
...The reasons are that the threshold voltage of GPS structure is higher and the DIBL effect is weaker in this structure [9]....
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References
71 citations
"Process variation study of Ground P..." refers background in this paper
...It is due to the fact that in the FD SOI, the threshold voltage and consequently its sensitivity to the thinfilm thickness are proportional to the inverse of the thin-film thickness [8]....
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...This is expected because DIBL is primary affected by the channel length and the thin-film thickness has a weak effect on DIBL [8]....
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"Process variation study of Ground P..." refers background or methods in this paper
...2, and also the results of [1] for 50nm-100nm technologies, we can conclude that the GPS structure is more resistant against DIBL....
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...In [1], the characteristics of three SOI structures in the technology range of 50-100nm have been compared....
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...As a result, DIBL deteriorates with an increase in the BOX thickness [1]....
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...In nano-regime as the dimensions of devices are reduced, the performance of the FD SOI MOSFET deteriorates due to short-channel effects [1]....
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...This structure has several advantages such as low electric field, high conductance, best control of shortchannel effects, and very good subthreshold slope characteristics [1]....
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44 citations
"Process variation study of Ground P..." refers background in this paper
...In the longchannel case, the subthreshold slope can be improved by increasing the buried oxide (BOX) thickness [2]....
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"Process variation study of Ground P..." refers methods in this paper
...The ground plane (GP) concept is one of the techniques used to reduce the DIBL effect [3]–[5], and it is effective only when the distance between the GP and the drain is small, compared to the channel length [1]....
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