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Journal ArticleDOI

Progress in nitride semiconductors from GaN to InN - MOVPE growth and characteristics

01 Jan 2005-Superlattices and Microstructures (Academic Press)-Vol. 37, Iss: 1, pp 19-32
TL;DR: In this article, a review of the field of nitride semiconductors ranging from GaN to InN with respect to metalorganic vapor phase epitaxy growth and characteristics starting from the period of single-crystalline films is presented.
About: This article is published in Superlattices and Microstructures.The article was published on 2005-01-01. It has received 52 citations till now. The article focuses on the topics: Metalorganic vapour phase epitaxy & Epitaxy.
Citations
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Journal ArticleDOI
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Abstract: Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...

871 citations

Journal ArticleDOI
TL;DR: In this paper, the fundamental properties of InGaN materials, such as optical, structural, and electrical properties, are reviewed, and the erroneous measurements of the indium composition by using X-ray diffraction (XRD) are also described.

229 citations

Journal ArticleDOI
TL;DR: In this article, the results of first-principles calculations of the structural, electronic, optical, elastic and thermodynamic properties of the monoclinic quaternary nitride Ba3Ca2Si2N6 were discussed.
Abstract: In this paper, we present and discuss the results of first-principles calculations of the structural, electronic, optical, elastic and thermodynamic properties of the monoclinic quaternary nitride Ba3Ca2Si2N6. A comparison between the computed crystal structure parameters and the corresponding experimental counterparts shows a very good agreement between them. The elastic constants were evaluated numerically for the monocrystalline and polycrystalline Ba3Ca2Si2N6 using the strain–stress approach. The predicted elastic constants demonstrate that Ba3Ca2Si2N6 is soft, ductile and mechanically stable. Ba3Ca2Si2N6 shows a strong anisotropic behavior of the elastic and structural properties. The calculated band structure reveals a semiconductor character of Ba3Ca2Si2N6. The spectra of the macroscopic linear optical functions, namely the complex dielectric function, reflection coefficient, energy loss of electrons, absorption coefficient and complex refractive index, were calculated and discussed. The quasi-harmonic Debye model was used to explore the temperature and pressure dependencies of certain macroscopic physical parameters for Ba3Ca2Si2N6.

91 citations

Journal ArticleDOI
TL;DR: In this article, a mass transport model was presented to simulate the epitaxy process of the InGaN layer, which consisted of two consecutive components, gas-phase diffusion process and surface diffusion process.
Abstract: In this work, the evolution of the InGaN layer growth on the ridge shaped GaN was studied. A mass transport model was presented to simulate the epitaxy process of the InGaN layer. The model consisted of two consecutive components, gas-phase diffusion process and surface diffusion process. The mean lifetime of adatoms on epitaxial surface was associated with their reaction rate in this model. An InGaN layer on ridge shaped GaN, including (0002) and {112¯2} facets, was grown by metal organic chemical vapor deposition to confirm the mass transport model. Gradient indium content distribution and inhomogeneous thickness of the InGaN layer were observed. Simulation of the InGaN layer growth process was performed by finite difference method with the mass transport model. By analyzing the results from calculations and experiments, the origins of the InGaN layer characteristics were attributed to the two diffusion components in the growth process. Surface diffusion resulted in the inhomogeneous thickness and gas-p...

38 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigate the degree to which the built-in electric field can be suppressed by employing polarization-matched barriers in III-N quantum well and dot structures grown along the c axis.
Abstract: We investigate the degree to which the built-in electric field can be suppressed by employing polarization-matched barriers in III-N quantum well and dot structures grown along the c axis. Our results show that it is possible to take advantage of the opposite contributions to the built-in potential arising from the different possible combinations of wurtzite GaN, InN, and AlN when alloying the materials. We show that, for a fixed bandgap of the dot/well, optimal alloy compositions can be found that minimize the built-in field across the structure. We discuss and study the impact of different material parameters on the results, including the influence of nonlinear effects in the piezoelectric polarization. Structures grown with unstrained barriers and on GaN epilayers are considered, including discussion of the effects of constraints such as strain limits and alloy miscibility.

34 citations

References
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Journal ArticleDOI
TL;DR: In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.
Abstract: Atmospheric pressure metalorganic vapor phase epitaxial growth and characterization of high quality GaN on sapphire (0001) substrates are reported. Using AlN buffer layers, GaN thin films with optically flat surfaces free from cracks are successfully grown. The narrowest x‐ray rocking curve from the (0006) plane is 2.70’ and from the (2024) plane is 1.86’. Photoluminescence spectra show strong near band edge emission. The growth condition dependence of crystalline quality is also studied.

2,035 citations

Journal ArticleDOI
TL;DR: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques as discussed by the authors.
Abstract: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.

1,378 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used a GaN buffer layer on a sapphire substrate to obtain an optically flat and smooth surface for gallium nitride (GaN) films.
Abstract: High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire substrate. Hall measurement was performed on GaN films grown with a GaN buffer layer as a function of the thickness of the GaN buffer layer. For the GaN film grown with a 200 A-GaN buffer layer, the carrier concentration and Hall mobility were 4×1016/cm3 and 600 cm2/V·s, respectively, at room temperature. The values became 8×1015/cm3 and 1500 cm2/V·s at 77 K, respectively. These values of Hall mobility are the highest ever reported for GaN films. The Hall measurement shows that the optimum thickness of the GaN buffer layer is around 200 A.

1,081 citations

Journal ArticleDOI
TL;DR: In this article, the authors present the results of a joint study with the Ioffe Physico-Technical Institute, Russian Academy of Science, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia and the Belarus Academy of Sciences, Brovki 17, 220072 Minsk, Belarus.
Abstract: (a) Ioffe Physico-Technical Institute, Russian Academy of Science, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia (b) Institut für Festkörpertheorie and Theoretische Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany (c) Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan (d) Institute of Solid State and Semiconductor Physics, Belarus Academy of Sciences, Brovki 17, 220072 Minsk, Belarus (e) LfI, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany

942 citations

Journal ArticleDOI
TL;DR: In this paper, the results of room-and low-temperature measurements of second-order Raman scattering for perfect GaN and AlN crystals as well as the Raman-scattering data for strongly disordered samples are presented.
Abstract: We present the results of room- and low-temperature measurements of second-order Raman scattering for perfect GaN and AlN crystals as well as the Raman-scattering data for strongly disordered samples. A complete group-theory analysis of phonon symmetry throughout the Brillouin zone and symmetry behavior of phonon branches, including the analysis of critical points, has been performed. The combined treatment of these results and the lattice dynamical calculations based on the phenomenological interatomic potential model allowed us to obtain the reliable data on the phonon dispersion curves and phonon density-of-states functions in bulk GaN and AlN. @S0163-1829~98!06840-4#

725 citations