Promising MOS devices for low-voltage and low-energy applications
01 Jan 2016-
TL;DR: In this paper, the authors discuss various promising MOS devices applicable to low-energy environmental and biomedical uses, and demonstrate the physical effects (quantum, tunneling) of these devices.
Abstract: Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications • Based on timely published and unpublished work written by expert authors • Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses • Describes the physical effects (quantum, tunneling) of MOS devices • Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment • Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities.
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28 Sep 2011
TL;DR: This cloud model promotes availability and is composed of five essential characteristics, three service models, and four deployment models.
Abstract: Cloud computing is a model for enabling convenient, on-demand network access to a shared pool of configurable computing resources (e.g., networks, servers, storage, applications, and services) that can be rapidly provisioned and released with minimal management effort or service provider interaction. This cloud model promotes availability and is composed of five essential characteristics, three service models, and four deployment models.
15,145 citations
TL;DR: The negative bias temperature instability (NBTI) commonly observed in p-channel metaloxide-semiconductor field effect transistors when stressed with negative gate voltages at elevated temperatures is discussed in this article.
Abstract: We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metal–oxide–semiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit performance and review interface traps and oxide charges, their origin, present understanding, and changes due to NBTI. Next we discuss the effects of varying parameters (hydrogen, deuterium, nitrogen, nitride, water, fluorine, boron, gate material, holes, temperature, electric field, and gate length) on NBTI. We conclude with the present understanding of NBTI and its minimization.
1,033 citations
TL;DR: It is shown that the Cell/B.E.E., or Cell Broadband Engine, processor can outperform other modern processors by approximately an order of magnitude and by even more in some cases.
Abstract: The Cell Broadband Engine™ (Cell/B.E.) processor is the first implementation of the Cell Broadband Engine Architecture (CBEA), developed jointly by Sony, Toshiba, and IBM. In addition to use of the Cell/B.E. processor in the Sony Computer Entertainment PLAYSTATION® 3 system, there is much interest in using it for workstations, media-rich electronics devices, and video and image processing systems. The Cell/B.E. processor includes one PowerPC® processor element (PPE) and eight synergistic processor elements (SPEs). The CBEA is designed to be well suited for a wide variety of programming models, and it allows for partitioning of work between the PPE and the eight SPEs. In this paper we show that the Cell/B.E. processor can outperform other modern processors by approximately an order of magnitude and by even more in some cases.
401 citations
01 Jan 2000
TL;DR: In this paper, the influence of FET gate oxide breakdown on the performance of a ring oscillator circuit was studied using statistical tools, emission microscopy, and circuit analysis. But the authors did not consider the effects of the breakdown on circuit performance.
Abstract: The influence of FET gate oxide breakdown on the performance of a ring oscillator circuit is studied using statistical tools, emission microscopy, and circuit analysis. It is demonstrated that many hard breakdowns can occur in this circuit without affecting its overall function. Time-to-breakdown data measured on individual FETs are shown to scale correctly to circuit level. SPICE simulations of the ring oscillator with the affected FET represented by an equivalent circuit confirm the measured influence of the breakdown on the circuit's frequency, the stand-by and the operating currents. It is concluded that if maintaining a digital circuit's logical functionality is the sufficient reliability criterion, a nonzero probability exists that the circuit will remain functional beyond the first gate oxide breakdown. Consequently, relaxation of the present reliability criterion in certain cases might be possible.
276 citations