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Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe
01 Jan 2001-
TL;DR: The Brillouin Zone for Wurtzite Crystal is defined in this paper, as the first zone for Zinc Blende Crystal, which is a type of hexagonal crystal.
Abstract: Contributors. Preface. Gallium Nitride (GaN) (V. Bougrov, et al.). Aluminum Nitride (AIN) (Y. Goldberg). Indium Nitride (InN) (A. Zubrilov). Boron Nitride (BN) (S. Rumyantsev, et al.). Silicon Carbide (SiC) (Y. Goldberg, et al.). Silicon-Germanium (Si-1-xGe-x) (F. Schaffler). Appendix 1: Basic Physical Constants. Appendix 2: Periodic Table of the Elements. Appendix 3: Rectangular Coordinates for Hexagonal Crystal. Appendix 4: The First Brillouin Zone for Wurtzite Crystal. Appendix 5: Zinc Blende Structure. Appendix 6: The First Brillouin Zone for Zinc Blende Crystal. Additional References.
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TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Abstract: Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...
871 citations
TL;DR: The EPW (E lectron-P honon coupling using Wannier functions) as discussed by the authors software is a Fortran-90 code that uses density-functional perturbation theory and maximally localized WANier functions for computing electron-phonon couplings and related properties in solids accurately and efficiently.
789 citations
Sandia National Laboratories1, University of California, Davis2, Massachusetts Institute of Technology3, Cornell University4, United States Army Research Laboratory5, Ohio State University6, University of California, Santa Barbara7, Boston University8, North Carolina State University9, Purdue University10, Georgia Institute of Technology11, Michigan State University12, Air Force Research Laboratory13, National Institute of Information and Communications Technology14, University of South Carolina15, United States Naval Research Laboratory16, Arizona State University17, University of Illinois at Urbana–Champaign18, Vanderbilt University19
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Abstract: J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons
785 citations
Cites background from "Properties of advanced semiconducto..."
...attained in lightly Mg-doped GaN samples.[30, 110] The corresponding numbers are not yet clearly known in UWBG AlN, however, primarily because control over doping levels has not yet reached the level of maturity it has in GaN....
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...0 eV), (2) high breakdown fields (>10 MV/cm for AlN), (3) high electron mobility (bulk mobilities up to 1,000 cm2V-1s-1), (4) high saturation velocities (>107 cm s-1), and (5) relative ease at being doped n-type with Si, which has a relatively small donor ionization energy up to ~80-85% Al content.[25-33] From an optoelectronics perspective, these alloys offer direct access to emission wavelengths shorter than about 365 nm, that is, into the UV-A, -B, and -C bands....
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...(W/(m•K)) 140 [30] Interpolation 285 / 319...
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TL;DR: In this article, the surface plasmons (SPs) have attracted much attentions because optical properties can be greatly enhanced by coupling between SPs and the multiple quantum wells (MQWs) in light-emitting diodes(LEDs).
Abstract: Surface plasmons (SPs) have attracted much attentions because optical properties can be greatly enhanced by coupling between SPs and the multiple quantum wells(MQWs) in light-emitting diodes(LEDs). We demonstrate the SP enhanced InGaN/GaN MQW blue LED with an Ag nanoparticle layer located underneath the MQWs. An enhancement of 32.2% of optical output power of the LED was observed at an input current of 100 mA. The time resolvedphotoluminescence(PL) result showed that the PL decay time of the LED with Ag nanoparticles was significantly decreased compared to that of the LED without Ag nanoparticles, indicating that the spontaneous emission rate was increased by the energy transfer between the QW light emitter and the SP of Ag nanoparticle. This result shows that the Ag nanoparticles can be used to greatly increase the internal quantum efficiency of InGaN/GaN MQW blue LED through the coupling of excitons in MQWs and SPs in Ag nanoparticles.
468 citations
TL;DR: In this paper, the fundamental band gap of InN films grown by molecular beam epitaxy have been measured by transmission and photoluminescence spectroscopy as a function of temperature.
Abstract: The fundamental band gap of InN films grown by molecular beam epitaxy have been measured by transmission and photoluminescence spectroscopy as a function of temperature The band edge absorption energy and its temperature dependence depend on the doping level The band gap variation and Varshni parameters of InN are compared with other group III nitrides The energy of the photoluminescence peak is affected by the emission from localized states and cannot be used to determine the band gap energy Based on the results obtained on two samples with distinctly different electron concentrations, the effect of degenerate doping on the optical properties of InN is discussed
386 citations