Properties of amorphous Bi2S3-crystalline silicon heterojunctions
01 Jul 1992-Solid-state Electronics (Pergamon)-Vol. 35, Iss: 7, pp 1027-1029
About: This article is published in Solid-state Electronics.The article was published on 1992-07-01. It has received 1 citation(s) till now. The article focuses on the topic(s): Nanocrystalline silicon & Crystalline silicon.
Topics: Nanocrystalline silicon (77%), Crystalline silicon (71%), Amorphous solid (66%), Heterojunction (53%)
01 Jul 2011-Journal of The Electrochemical Society
Abstract: Feasibility of combining p-type crystalline Si (c-Si) of 200―8000 nm in thickness with an n-type bismuth sulfide (Bi 2 S 3 ) thin film of 300 nm in thickness for thin film solar cell is analyzed. Theoretical analysis shows that the high optical absorption coefficient (10 5 cm ―1 ) of Bi 2 S 3 results in a light-generated current density (J L ) of >20 mA/cM 2 for a c-Si(200 nm)Bi z S 3 (300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (V oc ) of nearly 600 mV. Proof-of-concept cell structures were prepared on p-type c-Si wafers of electrical resistivity 1 Ω cm. Any oxide layer at the interface significantly deteriorates the cell parameters. In a cell prepared using evaporated n-Bi 2 S 3 on (p) c-Si, J sc is 3 mA/cm 2 ; V oc is 360 mV; and η is 0.5%; which improved to: 7.2 mA/cm 2 , 485 mV and 1.7%, respectively, after heating the cell in forming gas. A cell with an Sb 2 S 3 (40 nm) thin film as an antireflective coating on Bi 2 S 3 , produced: J sc of 10 mA/cm 2 ; V oc of 480 mV; and η of 2.4%. Theoretical simulation suggests that better cell fabrication could lead to: J sc of 26 mA/cm 2 ; V oc of 600 mV; and η of 10%.
01 Sep 1962-Solid-state Electronics
Abstract: The electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described. I–V and electro-optical characteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous. The forbidden band in heavily doped (n-type) germanium appears to shift to lower energy values.
15 Feb 1984-Journal of Applied Physics
Abstract: We have measured C‐V characteristics and temperature dependence of J‐V characteristics of undoped hydrogenated amorphous silicon (a‐Si:H) heterojunctions formed on p‐type crystalline silicon ( p c‐Si) substrates with different resistivities. It has been found that an abrupt heterojunction model is valid for a‐Si:H/p c‐Si heterojunctions, and the electron affinity of a‐Si:H has been estimated as 3.93±0.07 eV from C‐V characteristics. The forward current of all the junctions studied shows voltage and temperature dependence expressed as exp(−ΔEa f/kT) exp(AV), where ΔEa f and A are constants independent of voltage and temperature, being successfully explained by a multitunneling capture‐emission model. The reverse current is proportional to exp(−ΔEar/kT)(VD−V)1/2, where VD is the diffusion voltage and ΔEar is a constant. This current is probably limited by generation‐recombination process.
20 Sep 1983-Japanese Journal of Applied Physics
Abstract: A new type of amorphous silicon (a-Si) solar cell stacked with polycrystalline silicon (poly-c-Si) has been developed. The conversion efficiency more than 12% has been obtained with a cell structure of ITO//n-i-p a-Si//n a-Si/p poly c-Si//Al. A series of technical data on the cell fabrication and resulting photovoltaic characteristics are presented.
01 Jan 1986-Journal of The Electrochemical Society
Abstract: Depot de couches minces de sulfure de bismuth sur substrat en verre a 25°C a l'aide d'une solution de sel de Bi 3+ , de triethanolamine, NH 3 et thioacetamide
01 Mar 1976-Journal of Applied Physics
Abstract: Sevroal properties of glass‐silicon heterojunctions have been studied as a function of glass composition. Oxide and chalcogenide glasses of both insulating and semiconducting behavior were investigated. The current‐voltage characteristic indicates space‐charge‐limited currents in the glass film regardless of composition. An exponential trap distribution is suggested and trap density calculations agree with literature results. Capacitance‐voltage measurements show that chalcogenide glass/silicon structures behave like ideal abrupt heterojunctions.
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