Properties of CoGaAs and NiGaAs diodes fabricated by electroless plating
About: This article is published in Solid-state Electronics.The article was published on 1972-06-01. It has received 4 citations till now.
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01 Jan 1984
TL;DR: In this article, various metal-semiconductor systems, investigated during the last two decades, are tabulated in Table 1 and it can be seen from this table that the investigations are mainly centered round Schottky contacts based on Si and GaAs.
Abstract: Metal-semiconductor contacts showing rectifying properties are finding more and more applications in modern semiconductor devices technology(1) Apart from the fact that they are comparatively easy to fabricate and incorporate into integrated circuits, the main reason for their wide usage is that they do not exhibit minority carrier effects (e.g., long reverse recovery time, diffusion capacitance, etc.) similar to those observed in p-n junction devices. Various metal-semiconductor systems, investigated during the last two decades, are tabulated in Table 1. It can be seen from this table that the investigations are mainly centered round Schottky contacts based on Si and GaAs. Amongst the two, Si-based Schottky contacts are at present being used in a wide variety of devices and integrated circuits. Recent advances in GaAs material and processing techniques have, however, shown that not only can all of the semiconductor device structures realized in Si be fabricated in GaAs, but optical and very high speed integrated circuits can also be realized in the not-too-distant future. It is because of this as well as metallurgical and reliability considerations that the activity pertaining to GaAs-based Schottky contacts has increased appreciably during the last few years.
15 citations
TL;DR: In this paper, metal-semiconductor contacts have been fabricated by electroless deposition of Cu on chemically cleaned n-type silicon and their characteristics have been studied and the values of barrier height and the ideality factor are found to be comparable to those of vacuum evaporated contacts.
Abstract: Metal-semiconductor contacts have been fabricated by electroless deposition of Cu on chemically cleaned n -type silicon and their characteristics studied. The values of barrier height and the ideality factor are found to be comparable to those of vacuum evaporated contacts. A non-linearity in the 1/ C 2 vs V plot has been observed and the same has been satisfactorily explained by taking surface state capacitance into consideration.
14 citations
9 citations
TL;DR: In this paper , the surface-barrier photoelectric properties of Au-palladium-n-GaP structures were investigated under the action of both linearly polarized and natural radiation, providing new information about the height of the barrier, the interface m-s section, and the GaP band structure.
Abstract: This work investigates the surface-barrier photoelectric properties of Au-palladium-n-GaP structures. Research into the visible spectrum region, under the action of both linearly polarized and natural radiation, provides us with new information about the height of the barrier, the interface m-s section, and the GaP band structure. SBs based on GaP (p- and n-type) are helpful for researchers in developing advantageous structures for creating various photovoltaic devices—photodetectors for fiber-optic control of energy systems or possible structures for solar energy. Despite many years of research, issues concerning the band structure of semiconductors based on the phenomenon of photoelectroactive absorption in such surface-barrier structures’ m-s remain urgent in the creation of new high-performance devices. Such structures may also be interesting for creating solar energy systems. They create a thin insulating dielectric layer (usually an oxide layer) in solar cells on SBs between the m and the semiconductor substrate. The advantage of solar cells based on m dielectric semiconductor structures is the strong electric field near the surface of the semiconductor that usually has a direction favoring the collection of carriers created by short-wavelength light. Diffusion of impurities usually results in crystal defects in the active region. There are no such defects in the studied elements. This is also the difference between solar cells on m dielectric structures and elements with diffusion in p-n junctions. We studied the PS of Au-Pd-n-GaP nanostructures to determine the height of the potential barrier qφBo and obtained accurate data on the zone structure of the n-GaP. The PS of nanostructured Au-Pd-n-GaP structures was studied in the visible region of the spectrum. Essential information about the semiconductor’s potential barrier parameters and band structure was obtained. The intermediate Pd nanolayer between Au and GaP has specific effects on the Au-Pd-n-GaP nanostructure, which are of considerable practical and scientific significance for future needs.
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TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
Abstract: The dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it. (2) The surface state density (per unit area per electron volt) at the interface is a property only of the semiconductor surface and is independent of the metal. The barrier height φВn is defined here as the energy needed by an electron at the Fermi level in the metal to enter the conduction band of the semiconductor.
1,198 citations
Journal Article•
TL;DR: In this article, a process was developed for the production of adherent nickel deposits of good quality on steel without the use of an electric current, which was brought about by chemical reduction of a nickel salt with hypophosphites in a hot ammoniacal solution.
Abstract: A process has been developed for the production of adherent nickel deposits of good quality on steel without the use of an electric current. The deposition of nickel is brought about by chemical reduction of a nickel salt with hypophosphites in a hot ammoniacal solution. The reaction is catalytic and, under the prescribed conditions of concentration and pH, no reduction occurs in the solution unless certain metals, such as steel or nickel, are introduced into the bath. The reduction then occurs only at the surface of the immersed metal with the production of a coating of nickel of 96 to 97 percent purity.
392 citations
TL;DR: In this article, a process was developed for the production of adherent nickel deposits of good quality on steel without the use of an electric current, which was brought about by chemical reduction of a nickel salt with hypophosphites in a hot ammoniacal solution.
Abstract: A process has been developed for the production of adherent nickel deposits of good quality on steel without the use of an electric current. The deposition of nickel is brought about by chemical reduction of a nickel salt with hypophosphites in a hot ammoniacal solution. The reaction is catalytic and, under the prescribed conditions of concentration and pH, no reduction occurs in the solution unless certain metals, such as steel or nickel, are introduced into the bath. The reduction then occurs only at the surface of the immersed metal with the production of a coating of nickel of 96 to 97 percent purity.
385 citations
TL;DR: In this article, the Richardson equation appropriate to thermionic emission in Schottky barrier diodes is derived for a semiconductor having an energy band with ellipsoidal constant-energy surfaces in momentum space.
Abstract: The Richardson equation appropriate to thermionic emission in Schottky barrier diodes is derived. For a semiconductor having an energy band with ellipsoidal constant-energy surfaces in momentum space, the Richardson constant A 1 ∗ associated with a single energy minimum is A ∗ 1 =4φ qk 2 h 3 (l 2 m y m z +m 2 m z m x +n 2 m x m y ) 1 2 where l, m and n are the direction cosines of the normal to the emitting plane relative to the principal axes of the ellipsoid and mx, my and mz are the components of the effective mass tensor. In the Ge conduction band, summation of emission from all the energy minima gives maximum and minimum ratios of A∗ to the free electron value A (= 120 A/cm2/°K2) of 1·19 and 1·07 for the 〈100〉 and 〈111〉 directions respectively. In the silicon conduction band, maximum and minimum ratios of 2·15 and 2·05 occur for the 〈111〉 and 〈100〉 directions respectively. The theoretical predictions are in good agreement with experimental results from W-Si and Au-GaAs diodes.
364 citations
TL;DR: In this paper, the forward and reverse I-V characteristics of Schottky barrier diodes with PtSi contacts and diffused guard rings were investigated and the forward current was shown to follow the expression I f = I s exp (qV/nkT) over eight orders of magnitude in current with I s = 10−12 A and n = 1.02.
Abstract: Metal-semiconductor diodes with near-ideal forward and reverse I-V characteristics have been fabricated using PtSi contacts and diffused guard rings. Typically, for a device with an area of 2.5 × 10−6 cm2 made on an n-type (111) oriented, 0.35 ohm-cm silicon epitaxial substrate, the forward current follows the expression I f = I s exp (qV/nkT) over eight orders of magnitude in current with I s = 10−12 A and n = 1.02. The reverse breakdown is sharp and occurs at the theoretical breakdown voltage of p+ n silicon junctions of the same n-type doping. The premature breakdown observed in nearly all previous Schottky barrier diodes has been shown to be caused by electrode sharp-edge effects. Besides giving sharp breakdown voltage, the guard ring also eliminates anomalously high leakage currents, yet still retains the fast recovery time characteristic common to other Schottky barriers. Typically, the recovery time measured at 10 ma is less than 0.1 ns, the resolution of the measurement.
162 citations