Journal ArticleDOI
Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors
Harshit Agarwal,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Yu-Hung Liao,Avirup Dasgupta,Sayeef Salahuddin,Chenming Hu +7 more
Reads0
Chats0
TLDR
A new approach using multi-layer FE to engineer the shape of negative-capacitance field-effect transistor is discussed, and the results show that it leads to better sub-threshold swing as well as lower power supply.Abstract:
Negative-capacitance transistors use ferroelectric (FE) material in the gate-stack to improve the transistor performance. The extent of the improvement depends on the capacitance matching between the FE capacitance ( ${C}_{\textsf {fe}}$ ) and the underlying MOS transistor ( ${C}_{\textsf {MOS}}$ ). Since both ${C}_{\textsf {MOS}}$ and ${C}_{\textsf {fe}}$ have strong non-linearity, it is difficult to achieve a good matching for the entire operating gate voltage range. In this letter, we discuss a new approach using multi-layer FE to engineer the shape of ${C}_{\textsf {fe}}$ . The proposed method is validated using the TCAD simulation of negative-capacitance FDSOI transistor, and the results show that it leads to better sub-threshold swing as well as lower power supply ${V}_{\textsf {dd}}$ compared with a prototype single-layer negative-capacitance field-effect transistor.read more
Citations
More filters
Journal ArticleDOI
Progress and future prospects of negative capacitance electronics: A materials perspective
TL;DR: In this paper, the authors present a unique view of the field of negative capacitance electronics from the ferroelectric materials perspective, concluding that HfO2-based ferroelectrics are currently most promising for applications in electronics.
Journal ArticleDOI
Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges
TL;DR: This article elucidates multifarious contact engineering approaches such as edge contact, phase engineering and metal transfer to suppress the Fermi level pinning effect at the metal/TMDC interface, various channel treatment avenues such as van der Waals heterostructures, surface charge transfer doping to modulate the device properties, and the novel electronics constructed by interface engineering such as diodes, circuits and memories.
Journal ArticleDOI
Low Voltage Operating 2D MoS 2 Ferroelectric Memory Transistor with Hf 1-x Zr x O 2 Gate Structure
Siqing Zhang,Yan Liu,Jiuren Zhou,Meng Ma,Anyuan Gao,Binjie Zheng,Lingfei Li,Xin Su,Genquan Han,Jincheng Zhang,Yi Shi,Xiaomu Wang,Yue Hao +12 more
TL;DR: The results demonstrate that the HZO/MoS2 ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications.
Journal ArticleDOI
Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors
Jiuren Zhou,Genquan Han,Nuo Xu,Jing Li,Yue Peng,Yan Liu,Jincheng Zhang,Qing-Qing Sun,David Wei Zhang,Yue Hao +9 more
TL;DR: In this paper, the depolarization field in the ferroelectric (FE) film leads to voltage gains in negative capacitance (NC) field effect transistors (FETs).
Journal ArticleDOI
Exploration of Negative Capacitance in Gate-All-Around Si Nanosheet Transistors
TL;DR: In this paper, the negative capacitance effect of gate-all-around (GAA) nanosheet (NS) field effect transistors (FETs) was explored in silicon NS transistors by using TCAD.
References
More filters
Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Proceedings ArticleDOI
Sub-60mV-swing negative-capacitance FinFET without hysteresis
Kai-Shin Li,Pin-Guang Chen,Tung-Yan Lai,Chang-Hsien Lin,Cheng-Chih Cheng,Chun-Chi Chen,Yun-Jie Wei,Yun-Fang Hou,Ming-Han Liao,Min-Hung Lee,Min-Cheng Chen,Jia-Min Sheih,Wen-Kuan Yeh,Fu-Liang Yang,Sayeef Salahuddin,Chenming Hu +15 more
TL;DR: In this article, negative-Capacitance FinFETs with a floating internal gate are reported, where ALD Hf042ZrO2 ferroelectricity is added on top of the gate stack.
Proceedings ArticleDOI
14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications
Zoran Krivokapic,Uzma Rana,Rohit Galatage,Ali Razavieh,Ahmedullah Aziz,Jinping Liu,Jiajun Shi,H. J. Kim,Ryan Sporer,Claudy Serrao,A. Busquet,P. Polakowski,Johannes Müller,Walter Kleemeier,Jacob Ajey Poovannummoottil,D. Brown,Andreas Knorr,Rick Carter,Srinivasa Banna +18 more
TL;DR: In this paper, Doped hafnia ferroelectric layers with thicknesses from 3 to 8nm are integrated into state-of-the-art 14nm FinFET technology without any further process modification.
Proceedings ArticleDOI
Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds
Jiuren Zhou,Genquan Han,Qinglong Li,Yue Peng,Xiaoli Lu,Chunfu Zhang,Jincheng Zhang,Qing-Qing Sun,David Wei Zhang,Yue Hao +9 more
TL;DR: In this paper, the authors reported the first ferroelectric (FE) HfZrO x (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) and negligible hysteresis.
Journal ArticleDOI
Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part I: Model Description
Girish Pahwa,Tapas Dutta,Amit Agarwal,Sourabh Khandelwal,Sayeef Salahuddin,Chenming Hu,Yogesh Singh Chauhan +6 more
TL;DR: An accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications and accurately captures different aspects of NCFET is presented.
Related Papers (5)
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more