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Journal ArticleDOI

Proximity effect in electron-beam lithography

T. H. P. Chang
- 01 Nov 1975 - 
- Vol. 12, Iss: 6, pp 1271-1275
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TLDR
In this article, a simple technique for the computation of the proximity effect in electron-beam lithography is presented, which gives results of the exposure intensity received at any given point in a pattern area using a reciprocity principle.
Abstract
A simple technique for the computation of the proximity effect in electron‐beam lithography is presented. The calculations give results of the exposure intensity received at any given point in a pattern area using a reciprocity principle. Good agreement between the computed results and experimental data was achieved.

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Technologies for nanofluidic systems: top-down vs. bottom-up - a review

TL;DR: It is concluded that technology in the region of 1-10 nm is lacking and potentially can be covered by using the pulsed-laser deposition method as a controlled way for thin film deposition (thickness of a few nanometers) and further structuring by the top-down method.
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Cell–Material Interactions Revealed Via Material Techniques of Surface Patterning

TL;DR: The pertinent work sheds new insight into the cell–material interactions, and is stimulating for biomaterial design in regenerative medicine, tissue engineering, and high‐throughput detection, diagnosis, and drug screening.
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Directed self-assembly of block copolymers for use in bit patterned media fabrication

TL;DR: In this article, the authors review the latest research into two different block copolymer directed self-assembly (BCP DSA) techniques: graphoepitaxy and chemo-peitaxy (or chemical prepatterning).
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Nanoscale Three-Dimensional Patterning of Molecular Resists by Scanning Probes

TL;DR: A scanning probe lithography method based on the local desorption of a glassy organic resist by a heatable probe is presented and demonstrated at a half pitch down to 15 nanometers without proximity corrections and with throughputs approaching those of Gaussian electron beam lithography at similar resolution.
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Electron‐beam fabrication of 80‐Å metal structures

TL;DR: In this article, a contamination resist pattern is written with a 5.A 45-keV scanning electron beam in a 100-A-thick Au-Pd film supported by a carbon foil.
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