Proceedings ArticleDOI
Proximity effect in electron beam lithography
Ren Liming,Baoqin Chen +1 more
- Vol. 1, pp 579-582
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TLDR
In this paper, the mechanism of proximity effect is discussed through Monte Carlo simulation of the electron scattering processes and effective approaches for proximity effect correction are proposed, which can effectively reduce the proximity effect through improving mask design, optimizing processes conditions and utilizing proximity effect corrections software.Abstract:
Proximity effect is the most severe factor that influences the exposure resolution of electron beam. In this paper, the mechanism of proximity effect is discussed through Monte Carlo simulation of the electron scattering processes. And effective approaches of proximity effect correction are proposed. The theoretical results of Monte Carlo simulation and experimental results show that proximity effect is determined by many factors, in addition to the shape, size and packing density of patterns, proximity effect is also dependent on processes conditions. Only on the basis of optimizing the processes conditions and mask design, the expectant purpose of proximity effect correction by software can be achieved. Proximity effect is effectively reduced through improving mask design, optimizing processes conditions and utilizing proximity effect correction software.read more
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References
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Journal ArticleDOI
An efficient proximity-effect correction method for electron-beam patterning of photonic-crystal devices
TL;DR: In this article, a simple and accurate method was developed for proximity effect correction (PEC) in electron-beam patterning of two-dimensional photonic-crystal devices, which relies on the inherent periodicity of the underlying photoniccrystal structure, which is given as a corresponding matrix representation.
Journal ArticleDOI
Proximity effect correction for nanolithography
TL;DR: In this article, an iterative algorithm that exploits the overall model to compute corrections of the proximity effect in the nanometer range is presented, where the problem is set up as a convex, constrained, and nonlinear minimization problem.
Journal ArticleDOI
Studies of energy dissipation in resist films by a Monte Carlo simulation based on the Mott cross section
TL;DR: In this paper, the authors applied a more accurate Mott cross section calculated by the partial wave expansion to a Monte Carlo simulation of the electron energy dissipation process in resist films on substrates.
Journal ArticleDOI
Fast proximity effect correction: An extension of PYRAMID for circuit patterns of arbitrary size
TL;DR: An extension of PYRAMID, a hierarchical pattern shape modification scheme for proximity effect correction in electron‐beam lithography, for circuit patterns of arbitrary size as well as additional improvements to the previous implementation are described.
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