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Pure and mixed titanium, niobium and vanadium oxides as sputtered thick and thin films: Crystallographic properties and phase transitions between 300 and 1800 K I: X-ray diffraction investigations of thick films

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TLDR
In this article, the properties of transitien metal oxides (MOy and (Ti, M)Oy, with y≈2 and M = Ti, Nb and V) as thick films (thickness e≈1microm) deposited by r.f. sputtering, were studied before and after annealing (up to 1100 K) by X-ray diffraction.
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This article is published in Thin Solid Films.The article was published on 1990-05-15. It has received 6 citations till now. The article focuses on the topics: Anatase & Amorphous solid.

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Citations
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Patent

Doped titanium oxide additives

TL;DR: In this paper, a novel compound that is useful as a battery additive is represented by the formula Ti 1−x M x O 2−y where M is an element having an octagonal coordination structure.
Patent

Performance enhancing additives for electrochemical cells

TL;DR: In this article, an n-type metal oxide additive is either a doped metal oxide comprising a metal oxide modified by incorporation of a dopant, or a reduced metal oxide.
Journal ArticleDOI

Characterization of Ultraflat Titanium Oxide Surfaces

TL;DR: Cacciafesta et al. as mentioned in this paper investigated the physical and chemical nature of ultraflat titanium dioxide (TiO2) samples which were previously used as substrates for the investigation of adsorbed protein molecules.
Journal ArticleDOI

Chemical syntheses by means of microwave digestion as a focused open-vessel system: structural properties of oxides and hydroxides as powders

TL;DR: In this paper, a focused microwave (monomode system) was used to carry out some chemical syntheses in very short times, and different transition phases and different reduction and oxidation reactions were observed in the course of the heating treatments.
Journal ArticleDOI

Pure and mixed titanium, niobium and vanadium as sputtered thick and thin films: Crystallographic properties and phase transitions between 300 and 1800 K II: Electron microscopy investigations of thin films

TL;DR: In this article, the properties of transition metal oxides (MOy and (Ti,M)Oy) were studied by conventional transmission electron microscopy, and the results showed that the thin layers were initially amorphous.
References
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Journal ArticleDOI

Influence of stoichiometry on the metal‐semiconductor transition in vanadium dioxide

TL;DR: In this article, the structure and resistivity of vanadium dioxide films close to the metal-semiconductor transition have been studied as a function of stoichiometry and electron concentration.
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Metal-insulator transition in VnO2n−1

TL;DR: In this paper, electron diffraction has been used to confirm V n O 2 n −1 (n = 3-9) phases between V 2 O 3 and VO 2, and metal-insulator phase transitions have been found in all phases but V 3 O 5 and V 7 O 13.
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