Quantifying defects in graphene via Raman spectroscopy at different excitation energies
Luiz Gustavo Cançado,Ado Jorio,E. H. Martins Ferreira,Fernando Stavale,Carlos A. Achete,Rodrigo B. Capaz,Marcus V. O. Moutinho,Antonio Lombardo,Tero S. Kulmala,Andrea C. Ferrari +9 more
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TLDR
It is found that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy, and a simple equation for the determination of the point defect density in graphene via Raman spectroscopy is presented.Abstract:
We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.read more
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Raman spectroscopy as a versatile tool for studying the properties of graphene
Andrea C. Ferrari,Denis M. Basko +1 more
TL;DR: The state of the art, future directions and open questions in Raman spectroscopy of graphene are reviewed, and essential physical processes whose importance has only recently been recognized are described.
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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
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Probing the Nature of Defects in Graphene by Raman Spectroscopy
Axel Eckmann,Alexandre Felten,Alexandre Felten,Artem Mishchenko,L. Britnell,Ralph Krupke,Kostya S. Novoselov,Cinzia Casiraghi +7 more
TL;DR: A detailed analysis of the Raman spectra of graphene containing different type of defects is presented, finding that the intensity ratio of the D and D' peak is maximum for sp(3)-defects, it decreases for vacancy-like defects, and it reaches a minimum for boundaries in graphite.
Journal ArticleDOI
Raman spectroscopy of graphene-based materials and its applications in related devices.
TL;DR: The essential Raman scattering processes of the entire first- and second-order modes in intrinsic graphene are described and the extensive capabilities of Raman spectroscopy for the investigation of the fundamental properties of graphene under external perturbations are described.
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Ultrathin, Molecular-Sieving Graphene Oxide Membranes for Selective Hydrogen Separation
Hang Li,Zhuonan Song,Xiaojie Zhang,Yi Huang,Shiguang Li,Yating Mao,Harry J. Ploehn,Yu Bao,Miao Yu +8 more
TL;DR: In this paper, the authors reported ultrathin graphene oxide (GO) membranes, with thickness approaching 1.8 nm, which showed mixture separation selectivities as high as 3400 and 900 for H2/CO2 and H2 /N2 mixtures, respectively, through selective structural defects on GO.
References
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Raman spectrum of graphene and graphene layers.
Andrea C. Ferrari,Jannik C. Meyer,Vittorio Scardaci,Cinzia Casiraghi,Michele Lazzeri,Francesco Mauri,S. Piscanec,Da Jiang,K. S. Novoselov,S. Roth,A. K. Geim +10 more
TL;DR: This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
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Interpretation of Raman spectra of disordered and amorphous carbon
Andrea C. Ferrari,John Robertson +1 more
TL;DR: In this paper, a model and theoretical understanding of the Raman spectra in disordered and amorphous carbon is given, and the nature of the G and D vibration modes in graphite is analyzed in terms of the resonant excitation of \ensuremath{\pi} states and the long-range polarizability of the long range bonding.
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Raman Spectrum of Graphite
F. Tuinstra,J. L. Koenig +1 more
TL;DR: Raman spectra are reported from single crystals of graphite and other graphite materials as mentioned in this paper, and the Raman intensity of this band is inversely proportional to the crystallite size and is caused by a breakdown of the k-selection rule.
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Raman spectroscopy of graphene and graphite: Disorder, electron phonon coupling, doping and nonadiabatic effects
TL;DR: In this article, the authors focus on the origin of the D and G peaks and the second order of D peak and show that the G and 2 D Raman peaks change in shape, position and relative intensity with number of graphene layers.
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Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).