Quantized electric multipole insulators
07 Jul 2017-Science (American Association for the Advancement of Science)-Vol. 357, Iss: 6346, pp 61-66
TL;DR: This work introduces a paradigm in which “nested” Wilson loops give rise to topological invariants that have been overlooked and opens a venue for the expansion of the classification of topological phases of matter.
Abstract: The Berry phase provides a modern formulation of electric polarization in crystals. We extend this concept to higher electric multipole moments and determine the necessary conditions and minimal models for which the quadrupole and octupole moments are topologically quantized electromagnetic observables. Such systems exhibit gapped boundaries that are themselves lower-dimensional topological phases. Furthermore, they host topologically protected corner states carrying fractional charge, exhibiting fractionalization at the boundary of the boundary. To characterize these insulating phases of matter, we introduce a paradigm in which “nested” Wilson loops give rise to topological invariants that have been overlooked. We propose three realistic experimental implementations of this topological behavior that can be immediately tested. Our work opens a venue for the expansion of the classification of topological phases of matter.
Citations
More filters
TL;DR: In this paper, the electronic structure of bismuth, an element consistently described as bulk topologically trivial, is in fact topological and follows a generalized bulkboundary correspondence of higher-order: not the surfaces of the crystal, but its hinges host topologically protected conducting modes.
Abstract: The mathematical field of topology has become a framework to describe the low-energy electronic structure of crystalline solids. A typical feature of a bulk insulating three-dimensional topological crystal are conducting two-dimensional surface states. This constitutes the topological bulk-boundary correspondence. Here, we establish that the electronic structure of bismuth, an element consistently described as bulk topologically trivial, is in fact topological and follows a generalized bulk-boundary correspondence of higher-order: not the surfaces of the crystal, but its hinges host topologically protected conducting modes. These hinge modes are protected against localization by time-reversal symmetry locally, and globally by the three-fold rotational symmetry and inversion symmetry of the bismuth crystal. We support our claim theoretically and experimentally. Our theoretical analysis is based on symmetry arguments, topological indices, first-principle calculations, and the recently introduced framework of topological quantum chemistry. We provide supporting evidence from two complementary experimental techniques. With scanning-tunneling spectroscopy, we probe the unique signatures of the rotational symmetry of the one-dimensional states located at step edges of the crystal surface. With Josephson interferometry, we demonstrate their universal topological contribution to the electronic transport. Our work establishes bismuth as a higher-order topological insulator.
457 citations
TL;DR: In this article, a review of non-Hermitian classical and quantum physics can be found, with an overview of how diverse classical systems, ranging from photonics, mechanics, electrical circuits, acoustics to active matter, can be used to simulate non-hermitian wave physics.
Abstract: A review is given on the foundations and applications of non-Hermitian classical and quantum physics. First, key theorems and central concepts in non-Hermitian linear algebra, including Jordan normal form, biorthogonality, exceptional points, pseudo-Hermiticity and parity-time symmetry, are delineated in a pedagogical and mathematically coherent manner. Building on these, we provide an overview of how diverse classical systems, ranging from photonics, mechanics, electrical circuits, acoustics to active matter, can be used to simulate non-Hermitian wave physics. In particular, we discuss rich and unique phenomena found therein, such as unidirectional invisibility, enhanced sensitivity, topological energy transfer, coherent perfect absorption, single-mode lasing, and robust biological transport. We then explain in detail how non-Hermitian operators emerge as an effective description of open quantum systems on the basis of the Feshbach projection approach and the quantum trajectory approach. We discuss their applications to physical systems relevant to a variety of fields, including atomic, molecular and optical physics, mesoscopic physics, and nuclear physics with emphasis on prominent phenomena/subjects in quantum regimes, such as quantum resonances, superradiance, continuous quantum Zeno effect, quantum critical phenomena, Dirac spectra in quantum chromodynamics, and nonunitary conformal field theories. Finally, we introduce the notion of band topology in complex spectra of non-Hermitian systems and present their classifications by providing the proof, firstly given by this review in a complete manner, as well as a number of instructive examples. Other topics related to non-Hermitian physics, including nonreciprocal transport, speed limits, nonunitary quantum walk, are also reviewed.
452 citations
TL;DR: It is established that the electronic structure of bismuth, an element consistently described as bulk topologically trivial, is in fact topological and follows a generalized bulk–boundary correspondence of higher-order: not the surfaces of the crystal, but its hinges host topologically protected conducting modes.
Abstract: The mathematical field of topology has become a framework to describe the low-energy electronic structure of crystalline solids. A typical feature of a bulk insulating three-dimensional topological crystal are conducting two-dimensional surface states. This constitutes the topological bulk-boundary correspondence. Here, we establish that the electronic structure of bismuth, an element consistently described as bulk topologically trivial, is in fact topological and follows a generalized bulk-boundary correspondence of higher-order: not the surfaces of the crystal, but its hinges host topologically protected conducting modes. These hinge modes are protected against localization by time-reversal symmetry locally, and globally by the three-fold rotational symmetry and inversion symmetry of the bismuth crystal. We support our claim theoretically and experimentally. Our theoretical analysis is based on symmetry arguments, topological indices, first-principle calculations, and the recently introduced framework of topological quantum chemistry. We provide supporting evidence from two complementary experimental techniques. With scanning-tunneling spectroscopy, we probe the unique signatures of the rotational symmetry of the one-dimensional states located at step edges of the crystal surface. With Josephson interferometry, we demonstrate their universal topological contribution to the electronic transport. Our work establishes bismuth as a higher-order topological insulator.
440 citations
TL;DR: An effective, efficient and fully automated algorithm that diagnoses the nontrivial band topology in a large fraction of nonmagnetic materials is introduced, based on recently developed exhaustive mappings between the symmetry representations of occupied bands and topological invariants.
Abstract: Topological electronic materials such as bismuth selenide, tantalum arsenide and sodium bismuthide show unconventional linear response in the bulk, as well as anomalous gapless states at their boundaries. They are of both fundamental and applied interest, with the potential for use in high-performance electronics and quantum computing. But their detection has so far been hindered by the difficulty of calculating topological invariant properties (or topological nodes), which requires both experience with materials and expertise with advanced theoretical tools. Here we introduce an effective, efficient and fully automated algorithm that diagnoses the nontrivial band topology in a large fraction of nonmagnetic materials. Our algorithm is based on recently developed exhaustive mappings between the symmetry representations of occupied bands and topological invariants. We sweep through a total of 39,519 materials available in a crystal database, and find that as many as 8,056 of them are topologically nontrivial. All results are available and searchable in a database with an interactive user interface. Topological materials are thought to be scarce, but an algorithm that diagnoses nontrivial topology in nonmagnetic materials finds the opposite: more than 30 per cent of the 26,688 materials studied are topological.
429 citations
TL;DR: This work uses tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally, and provides a platform for the study of higher-dimensional topological physics.
Abstract: When a two-dimensional (2D) electron gas is placed in a perpendicular magnetic field, its in-plane transverse conductance becomes quantized; this is known as the quantum Hall effect. It arises from the non-trivial topology of the electronic band structure of the system, where an integer topological invariant (the first Chern number) leads to quantized Hall conductance. It has been shown theoretically that the quantum Hall effect can be generalized to four spatial dimensions, but so far this has not been realized experimentally because experimental systems are limited to three spatial dimensions. Here we use tunable 2D arrays of photonic waveguides to realize a dynamically generated four-dimensional (4D) quantum Hall system experimentally. The inter-waveguide separation in the array is constructed in such a way that the propagation of light through the device samples over momenta in two additional synthetic dimensions, thus realizing a 2D topological pump. As a result, the band structure has 4D topological invariants (known as second Chern numbers) that support a quantized bulk Hall response with 4D symmetry. In a finite-sized system, the 4D topological bulk response is carried by localized edge modes that cross the sample when the synthetic momenta are modulated. We observe this crossing directly through photon pumping of our system from edge to edge and corner to corner. These crossings are equivalent to charge pumping across a 4D system from one three-dimensional hypersurface to the spatially opposite one and from one 2D hyperedge to another. Our results provide a platform for the study of higher-dimensional topological physics.
416 citations
References
More filters
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Abstract: Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.
5,619 citations
TL;DR: In this article, the Hall conductance of a two-dimensional electron gas has been studied in a uniform magnetic field and a periodic substrate potential, where the Kubo formula is written in a form that makes apparent the quantization when the Fermi energy lies in a gap.
Abstract: The Hall conductance of a two-dimensional electron gas has been studied in a uniform magnetic field and a periodic substrate potential $U$. The Kubo formula is written in a form that makes apparent the quantization when the Fermi energy lies in a gap. Explicit expressions have been obtained for the Hall conductance for both large and small $\frac{U}{\ensuremath{\hbar}{\ensuremath{\omega}}_{c}}$.
4,811 citations
TL;DR: A two-dimensional condensed-matter lattice model is presented which exhibits a nonzero quantization of the Hall conductance in the absence of an external magnetic field, and exhibits the so-called "parity anomaly" of (2+1)-dimensional field theories.
Abstract: A two-dimensional condensed-matter lattice model is presented which exhibits a nonzero quantization of the Hall conductance ${\ensuremath{\sigma}}^{\mathrm{xy}}$ in the absence of an external magnetic field. Massless fermions without spectral doubling occur at critical values of the model parameters, and exhibit the so-called "parity anomaly" of (2+1)-dimensional field theories.
4,606 citations
TL;DR: In this paper, a method for determining the optimally localized set of generalized Wannier functions associated with a set of Bloch bands in a crystalline solid is presented, which is suitable for use in connection with conventional electronic-structure codes.
Abstract: We discuss a method for determining the optimally localized set of generalized Wannier functions associated with a set of Bloch bands in a crystalline solid. By ''generalized Wannier functions'' we mean a set of localized orthonormal orbitals spanning the same space as the specified set of Bloch bands. Although we minimize a functional that represents the total spread Sigma(n)(r(2))(n) - (r)(n)(2) of the Wannier functions in real space, our method proceeds directly from the Bloch functions as represented on a mesh of k points, and carries out the minimization in a space of unitary matrices U-mn((k)) describing the rotation among the Bloch bands at each k point. The method is thus suitable for use in connection with conventional electronic-structure codes. The procedure also returns the total electric polarization as well as the location of each Wannier center. Sample results for Si, GaAs, molecular C2H4, and LiCl will be presented.
3,155 citations
TL;DR: It is shown that physically $\ensuremath{\Delta}P can be interpreted as a displacement of the center of charge of the Wannier functions.
Abstract: We consider the change in polarization \ensuremath{\Delta}P which occurs upon making an adiabatic change in the Kohn-Sham Hamiltonian of the solid. A simple expression for \ensuremath{\Delta}P is derived in terms of the valence-band wave functions of the initial and final Hamiltonians. We show that physically \ensuremath{\Delta}P can be interpreted as a displacement of the center of charge of the Wannier functions. The formulation is successfully applied to compute the piezoelectric tensor of GaAs in a first-principles pseudopotential calculation.
3,136 citations