Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
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TLDR
In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.Abstract:
We show that the quantum spin Hall (QSH) effect, a state of matter with topological properties distinct from those of conventional insulators, can be realized in mercury telluride–cadmium telluride semiconductor quantum wells. When the thickness of the quantum well is varied, the electronic state changes from a normal to an “inverted” type at a critical thickness d c . We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss methods for experimental detection of the QSH effect.read more
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References
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Quantum spin Hall effect in graphene
Charles L. Kane,Eugene J. Mele +1 more
TL;DR: Graphene is converted from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator and the spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
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Z-2 Topological Order and the Quantum Spin Hall Effect
Charles L. Kane,Eugene J. Mele +1 more
TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Journal ArticleDOI
Quantized Hall conductance in a two-dimensional periodic potential
TL;DR: In this article, the Hall conductance of a two-dimensional electron gas has been studied in a uniform magnetic field and a periodic substrate potential, where the Kubo formula is written in a form that makes apparent the quantization when the Fermi energy lies in a gap.
Quantum Spin Hall Insulator State in HgTe Quantum Wells
Markus König,Steffen Wiedmann,Steffen Wiedmann,Christoph Brüne,Christoph Brüne,Andreas Roth,Andreas Roth,Hartmut Buhmann,Hartmut Buhmann,Laurens W. Molenkamp,Laurens W. Molenkamp,Xiao-Liang Qi,Xiao-Liang Qi,Shou-Cheng Zhang,Shou-Cheng Zhang +14 more
TL;DR: In this article, the quantum spin Hall effect was observed in HgTe/(Hg,Cd)Te quantum wells with well width d 6.3 nanometers and the residual conductance was independent of sample width, indicating that it is caused by edge states.
Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.