Patent•
Radiant ray detector
30 Mar 1979-
TL;DR: In this article, the authors proposed to increase the propagation efficiency of light between the scintillator and the photo detector by forming the silicon nitride film on the inorganic scintillation surface with plasma glow discharge.
Abstract: PURPOSE: To increase the propagation efficiency of light between the scintillator and the photo detector, by forming the silicon nitride film on the inorganic scintillator surface with plasma glow discharge. CONSTITUTION: Since the inorganic substance scintillator 1 such as NaI(Tl), CsI(Tl), and Bi 4 Ge 3 O 12 has greater refractive index as 1.85W2.15, the reflection loss on the surface of light is greater. The film 2 of silicon nitride is vacumm- evaporated on the surface of the scintillator with plasma glow discharge. The silicon nitride film 2 gives the refractive index of 1.5W2.1 when the temperature of substrate is changed in the range of 40W300°C. The surface reflection of the scintillator can be reduced by changing continuously the refractive index of silicon evaporation film evaporated on the surface of scintillator 1 or taking it to a suitable value for the prevention of reflection. COPYRIGHT: (C)1980,JPO&Japio
Citations
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Patent•
23 Jan 2004TL;DR: A scintillation detector is an apparatus consisting of a filter disposed intermediate between a scintillator and a detector, the filter being adapted to block relatively long wavelengths of light to reduce afterglow as mentioned in this paper.
Abstract: A scintillation detector apparatus comprising a filter disposed intermediate a scintillator and a detector, the filter being adapted to block relatively long wavelengths of light to reduce afterglow. The detector apparatus may, for example, be a part of a detector system such as a CT scanner, a RG system, or a geophysical measurement system.
21 citations
Patent•
02 Jun 1995TL;DR: In this article, a photo sensor barrier is constructed between an amorphous silicon photosensor array and the scintillator using tetraethoxysilane (TEOS) as the source gas.
Abstract: A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photosensor array and the second stratum is silicon nitride that is disposed over the first stratum. The photosensor barrier layer has a shape that substantially conforms to the the shape of the underlying upper conductive layer and has a maximum thickness of about 3 microns. The silicon oxide and silicon nitride are deposited in a vapor deposition process at less than about 250° C. using tetraethoxysilane (TEOS) as the silicon source gas.
19 citations
Patent•
06 Jul 2005TL;DR: In this article, a method and apparatus for maintaining a scintillator including a window attached using a frit was described, which can be applied as a slurry, a tape or a preform.
Abstract: A method and apparatus for maintaining a scintillator including a window attached using a frit. The frit may be applied as a slurry, a tape or a preform. The window may be attached using an eyelet. A method and apparatus for maintaining a scintillator including a window attached by a braze.
14 citations
Patent•
31 Oct 1995TL;DR: In this article, a photo sensor barrier layer between an amorphous silicon photosensor array and the scintillator is constructed using two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photo sensor array, and the second stratum is silicon nitride that is disposed over this stratum.
Abstract: A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of the photosensor array and the second stratum is silicon nitride that is disposed over the first stratum. The photosensor barrier layer has a shape that substantially conforms to the the shape of the underlying upper conductive layer and has a maximum thickness of about 3 microns. The silicon oxide and silicon nitride are deposited in a vapor deposition process at less than about 250 DEG C. using tetraethoxysilane (TEOS) as the silicon source gas.
11 citations
Patent•
15 Jan 1991TL;DR: In this paper, a flat-faced photomultiplier tube was coupled to a long scintillator rod 30 having reduced internal light reflectance 45 and a medium having both an index of refraction less than that of the scintillation tube and the capacity to attenuate light traveling from the spool of the rod to the light source on the basis of the light's point of origin within the rod.
Abstract: High resolution scintillation counters comprise a flat-faced photomultiplier tube 10 optically coupled to a long scintillator rod 30 having reduced internal light reflectance 45 and a medium 55 between the photomultiplier tube and the scintillator, said medium having both an index of refraction less than that of the scintillator and the capacity to attenuate light traveling from the scintillator to the photomultiplier on the basis of the light's point of origin within the scintillator. In preferred embodiments, the medium comprises air. The scintillation counters disclosed are useful in the detection of electromagnetic radiation, especially gamma rays.
10 citations
References
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Patent•
22 Mar 1974TL;DR: A radiation detector system used in aerial dosimetry in which an inorganic scintillation crystal detector and spectral filter are coupled to a photomultiplier tube and the requisite electronic circuits is described in this article.
Abstract: A radiation detector system used in aerial dosimetry in which an inorganic scintillation crystal detector and spectral filter are coupled to a photomultiplier tube and the requisite electronic circuits. The crystal detector is pointed toward an area to be monitored for X-ray or gamma ray and the resulting optical radiation therefrom is applied to the photomultiplier tube for converting to an electrical output therefrom which is monitored to indicate the radiation dosage.
13 citations