Radiation Effects on Silicon Charge-Coupled Devices
01 Dec 1978-IEEE Transactions on Components, Hybrids, and Manufacturing Technology (IEEE)-Vol. 1, Iss: 4, pp 353-365
TL;DR: In this article, the permanent ionizing and neutron radiation-induced degradation in silicon charge-coupled devices (CCD's), along with transient upset effects, are reviewed, and the operation of a threshold voltage insensitive CCD input technique in a total dose radiation environment is evaluated.
Abstract: The permanent ionizing and neutron radiation-induced degradation in silicon charge-coupled devices, (CCD's), along with transient upset effects, are reviewed. The operation of a threshold voltage insensitive CCD input technique in a total dose radiation environment is evaluated. CCD structural design rules for decreasing ionizing radiation sensitivity are presented. The increased total ionizing dose tolerance of CCD's fabricated with a radiation hard oxide is described. Liquid nitrogen temperature irradiation effects in CCD's are discussed.
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Patent•
18 Dec 1990TL;DR: The x-ray imaging system in this paper comprises an x ray source for producing an xray beam having an energy of at least 30 kVp and an x-rays detector consisting a solid state integrated circuit having a silicon substrate and a plurality of charge storage devices.
Abstract: The x-ray imaging system comprises an x-ray source for producing an x-ray beam having an energy of at least 30 kVp and an x-ray detector. The x-ray detector comprises a solid state integrated circuit having a silicon substrate and a plurality of charge storage devices. The detector is responsive to x-rays of at least 30 keV to directly produce free electrons which interact with the charge storage devices.
239 citations
TL;DR: A review of radiation-induced displacement damage effects in semiconductor devices is presented in this paper, with emphasis placed on silicon technology, including effects produced in silicon particle detectors, visible imaging arrays, and solar cells.
Abstract: A review of radiation-induced displacement damage effects in semiconductor devices is presented, with emphasis placed on silicon technology. The history of displacement damage studies is summarized, and damage production mechanisms are discussed. Properties of defect clusters and isolated defects are addressed. Displacement damage effects in materials and devices are considered, including effects produced in silicon particle detectors, visible imaging arrays, and solar cells. Additional topics examined include NIEL scaling, carrier concentration changes, random telegraph signals, radiation hardness assurance, and simulation methods for displacement damage. Areas needing further study are noted.
176 citations
Cites background from "Radiation Effects on Silicon Charge..."
...A review of early radiation effects work on CCDs is given in [87]....
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TL;DR: In this article, two important classes of radiation damage to the scientific CCD are discussed, namely bulk and ionization effects, and they are shown that ionization-induced damage induces a buildup of charge in the CCD's gate insulator causing the sensor's drive operating windows to shift (i.e., flat-band shift).
Abstract: Two important classes of radiation damage to the scientific CCD are discussed, namely bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high energy photons or particles. Single atomic displacements or cluster defect damage in silicon is produced depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades CTE performance. Ionization-induced damage induces a buildup of charge in the CCD's gate insulator causing the sensor's drive operating windows to shift (i.e. flat-band shift). In addition, ionization damage creates unwanted electronic sites at the gate's interface causing the CCD's dark current to increase. >
105 citations
TL;DR: In this article, the evolution of radiation effects understanding in infrared detector technology, charge coupled devices, and active pixel sensors is summarized and a discussion of key radiation effects developments and a view of the future of the technologies from a radiation effects perspective.
Abstract: Photonic imagers are being increasingly used in space systems, where they are exposed to the space radiation environment. Unique properties of these devices require special considerations for radiation effects. This paper summarizes the evolution of radiation effects understanding in infrared detector technology, charge coupled devices, and active pixel sensors. The paper provides a discussion of key radiation effects developments and a view of the future of the technologies from a radiation effects perspective.
85 citations
Cites background from "Radiation Effects on Silicon Charge..."
...This early work was reviewed by Killiany in 1978 [66]....
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TL;DR: In this article, a virtual phase (VP) CCD is proposed for fabrication of large-area high-performance devices with high yield, and the fundamentals of operation of VP CCD's are discussed, and advantages and limitations of this new technology are presented.
Abstract: This article presents a new technology for fabrication of a single-phase CCD. This new technology called virtual phase (VP) employs only a single level gate structure, and is, therefore, ideally suited for fabrication of large-area high-performance devices with high yield, The fundamentals of operation of VP CCD's are discussed, and the advantages and limitations of this new technology are presented. The design, fabrication, and operation of a 490 × 328 TV compatible VP imager is described, and performance parameters as well as imagery are presented.
61 citations
References
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01 Jan 1975
TL;DR: A unified treatment of the basic electrostatic and dynamic design of charge-coupled devices (CCD's) based on approximate analytical analysis is presented and tradeoffs in area-array performance from a systems point of view and performance predictions are presented.
Abstract: A unified treatment of the basic electrostatic and dynamic design of charge-coupled devices (CCD's) based on approximate analytical analysis is presented. Clocking methods and tradeoffs are discussed. Driver power dissipation and on-chip power dissipation are analyzed. Properties of noise sources due to charge input and transfer are summarized. Low-noise methods of signal extraction are discussed in detail. The state of the art for linear and area arrays is presented. Tradeoffs in area-array performance from a systems point of view and performance predictions are presented in detail. Time delay and integration (TDI) and the charge-injection device (CID) are discussed. Finally, the uses of the charge-coupled concept in infrared imaging are discussed.
255 citations
18 Apr 1978
TL;DR: A physical soft error mechanism in dynamic RAMs and CCDs is proposed in this paper, which is the upset of stored data by the passage of heavily ionizing radiation through the memory array area Alpha particles are emitted in the radioactive decay of uranium and thorium present in parts per million levels in packaging materials.
Abstract: A new physical soft error mechanism in dynamic RAMs and CCDs is the upset of stored data by the passage of heavily-ionizing radiation through the memory array area Alpha particles are emitted in the radioactive decay of uranium and thorium present in parts-per-million levels in packaging materials When an alpha particle penetrates the die surface, it can create enough electron-hole pairs near a storage node to cause a random, single-bit error Results of experiments and measurements of alpha activity of materials are reported and a physical model for the soft error is developed Implications for the future of dynamic memories are also discussed
233 citations
TL;DR: In this paper, the effects of processing steps on the radiation hardness of MOS devices have been systematically investigated, where quantitative relationships between the radiation-induced voltage shifts and processing parameters have been determined, where possible.
Abstract: The effects of processing steps on the radiation hardness of MOS devices have been systematically investigated. Quantitative relationships between the radiation-induced voltage shifts and processing parameters have been determined, where possible. Using the results of process optimization, a controlled baseline fabrication process for aluminum-gate CMOS has been defined. CMOS inverters which can survive radiation exposures well in excess of 108 rads (Si) have been fabricated. Restrictions that the observed physical dependences place upon possible models for the traps responsible for radiation-induced charging in SiO2 are discussed.
190 citations
TL;DR: In this article, the first measurement of hole mobility and its temperature dependence in thermally grown SiO2 on Si was reported and found to follow μ≃20 exp(−0.6eV/kT) cm2/V sec.
Abstract: The first measurement of the hole mobility and its temperature dependence in thermally grown SiO2 on Si is reported and found to follow μ≃20 exp(−0.6eV/kT) cm2/V sec. In agreement with previous studies, the energy required to form an electron−hole pair with ionizing radiation is found to be field dependent and at very high fields is in the range of 18 eV/electron−hole pair, and is nearly temperature independent from 77 to 370 °K.
136 citations
TL;DR: In this paper, the transient response of a number of pedigreed SiO2 gate insulator MOS capacitors following exposure to a pulsed 13-MeV electron beam was studied as a function of time, temperature, and applied bias.
Abstract: The transient response, or flat-band voltage recovery, in a number of pedigreed SiO2 gate insulator MOS capacitors following exposure to a pulsed 13-MeV electron beam was studied as a function of time, temperature, and applied bias A quantitative comparison of the response characteristics of the different oxides is made It is found generally that the response consists of two stages The first (early time) stage in most cases encompasses most of the recovery and is dominated by hole transport through the insulator film to the interface This hole transport recovery stage in all the oxides studied is well described by the stochastic model of hopping transport based on a continuous time random walk used previously in the analysis of hole transport in SiO2 It is further shown that all the main features of the hole transport are consistent with a model of the holes moving via polaron hopping between localized sites in the SiO2 The second or long-term stage of recovery commences after cessation of the hole transport in the oxide and is found to vary significantly in its importance and time of onset among the various oxides This stage involves a radiation-induced buildup of interface states and possibly, in some cases, an annealing of a trapped-hole distribution near the SiO2/Si interface
129 citations