Journal ArticleDOI
Radiation studies of silicon-microstrip detectors for use in ATLAS and SCT
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Silicon detectors designed for use in ATLAS at CERN's Large Hadron Collider, Geneva, Switzerland, were shown to operate satisfactorily after irradiation with 3/spl times/10/sup 14/ (24 GeV/c protons)/cm/sup 2/ No breakdown effects are seen with the detectors biased up to 500 V as discussed by the authors.Abstract:
Silicon detectors designed for use in ATLAS at CERN's Large Hadron Collider, Geneva, Switzerland, are shown to operate satisfactorily after irradiation with 3/spl times/10/sup 14/ (24 GeV/c protons)/cm/sup 2/. No breakdown effects are seen with the detectors biased up to 500 V.read more
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Dissertation
Construction and Performance of the ATLAS SCT Barrels and Cosmic Tests
TL;DR: The Semi-Conductor Tracker (SCT) is a multi-purpose detector for the LHC and will detect proton-proton collisions with center of mass energy of 14 TeV.
Search for the Lepton Flavor Violating Decay Z → eμ
TL;DR: In this article, a search for the lepton flavor violating decay Z → eμ in proton-proton collisions at a center of mass energy of 7 TeV using approximately 3.1 pb−1 of data recorded with the ATLAS detector at the CERN large hadron collider is presented.
Journal ArticleDOI
Comparative study of doped and doping less charge plasma silicon microstrip detector
TL;DR: In this paper, a dopingless charge plasma silicon microstrip detector was introduced and compared with the doped and doping less charge plasma microstrip detectors, and the results showed improvement in Preradiation breakdown voltage of 2200 V with leakage current of 5.2 pA/m.
References
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Journal ArticleDOI
Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration
G. Lindström,M. Ahmed,Sebastiano Albergo,Phillip Allport,D.F. Anderson,Ladislav Andricek,M. Angarano,Vincenzo Augelli,N. Bacchetta,P. Bartalini,Richard Bates,U. Biggeri,G. M. Bilei,Dario Bisello,D. Boemi,E. Borchi,T. Botila,T. J. Brodbeck,Mara Bruzzi,T. Budzyński,P. Burger,Francesca Campabadal,Gianluigi Casse,E. Catacchini,A. Chilingarov,Paolo Ciampolini,Vladimir Cindro,M. J. Costa,Donato Creanza,Paul Clauws,C. Da Via,Gavin Davies,W. De Boer,Roberto Dell'Orso,M. De Palma,B. Dezillie,V. K. Eremin,O. Evrard,Giorgio Fallica,Georgios Fanourakis,H. Feick,Ettore Focardi,Luis Fonseca,E. Fretwurst,J. Fuster,K. Gabathuler,Maurice Glaser,Piotr Grabiec,E. Grigoriev,Geoffrey Hall,M. Hanlon,F. Hauler,S. Heising,A. Holmes-Siedle,Roland Horisberger,G. Hughes,Mika Huhtinen,I. Ilyashenko,Andrew Ivanov,B.K. Jones,L. Jungermann,A. Kaminsky,Z. Kohout,Gregor Kramberger,M Kuhnke,Simon Kwan,F. Lemeilleur,Claude Leroy,M. Letheren,Z. Li,Teresa Ligonzo,Vladimír Linhart,P.G. Litovchenko,Demetrios Loukas,Manuel Lozano,Z. Luczynski,Gerhard Lutz,B. C. MacEvoy,S. Manolopoulos,A. Markou,C Martinez,Alberto Messineo,M. Mikuž,Michael Moll,E. Nossarzewska,G. Ottaviani,Val O'Shea,G. Parrini,Daniele Passeri,D. Petre,A. Pickford,Ioana Pintilie,Lucian Pintilie,Stanislav Pospisil,Renato Potenza,C. Raine,Joan Marc Rafi,P. N. Ratoff,Robert Richter,Petra Riedler,Shaun Roe,P. Roy,Arie Ruzin,A.I. Ryazanov,A. Santocchia,Luigi Schiavulli,P. Sicho,I. Siotis,T. J. Sloan,W. Slysz,Kristine M. Smith,M. Solanky,B. Sopko,K. Stolze,B. Sundby Avset,B. G. Svensson,C. Tivarus,Guido Tonelli,Alessia Tricomi,Spyros Tzamarias,Giusy Valvo,A. Vasilescu,A. Vayaki,E. M. Verbitskaya,Piero Giorgio Verdini,Vaclav Vrba,Stephen Watts,Eicke R. Weber,M. Wegrzecki,I. Węgrzecka,P. Weilhammer,R. Wheadon,C.D. Wilburn,I. Wilhelm,R. Wunstorf,J. Wüstenfeld,J. Wyss,K. Zankel,P. Zabierowski,D. Žontar +139 more
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Journal ArticleDOI
Radiation studies and operational projections for silicon in the ATLAS inner detector
TL;DR: In this article, the current models for bulk damage in high resistivity silicon have been reviewed and the damage constants were obtained from a global data survey, on this basis the degradation of the silicon counters in the ATLAS Inner Detector during a 10-year LHC operation is forecasted.
Journal ArticleDOI
Bias-dependent radiation damage in high-resistivity silicon diodes irradiated with heavy charged particles
TL;DR: In this paper, bias-induced damage was estimated to result in a 40-70 V addition to required bias for detectors in the ATLAS SCT after 10 years of LHC operation.
Journal ArticleDOI
Recent results from the ATLAS SCT irradiation programme
Craig Buttar,Phillip Allport,J. R. Carter,Gianluigi Casse,Marco Costa,Ian Dawson,L. Drage,A. Greenall,C. Grigson,R.S. Harper,John Hill,L. G. Johansen,G. F. Moorhead,D. Morgan,R. Nicholson,Philip Phillips,Petra Riedler,D. Robinson,Javier Sánchez,Steinar Stapnes,Bjarne Stugu,A Werner +21 more
TL;DR: In this article, the irradiation facility at the CERN proton synchrotron, set up to irradiate full-size prototypes of silicon microstrip detectors for the ATLAS semiconductor tracker, is described and measurements of the detector currents during irradiation are reported.
Journal ArticleDOI
Bias dependence and bistability of radiation defects in silicon
TL;DR: In this paper, the influence of bias on effective dopant concentration in neutron and pion irradiated p + - n - n + diodes has been measured and detailed studies of annealing of the bias-induced damage have revealed three components, with introduction rates ranging from 0.005 to 0.008 cm −1 and time constants ranging from 5 to 1000 h at 20°C.