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Journal ArticleDOI

Raman spectrum of graphene and graphene layers.

TL;DR: This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
Abstract: Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers The D peak second order changes in shape, width, and position for an increasing number of layers, reflecting the change in the electron bands via a double resonant Raman process The G peak slightly down-shifts This allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area

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TL;DR: A detailed analysis of the Raman spectra of graphene containing different type of defects is presented, finding that the intensity ratio of the D and D' peak is maximum for sp(3)-defects, it decreases for vacancy-like defects, and it reaches a minimum for boundaries in graphite.
Abstract: Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D′ peak is maximum (∼13) for sp3-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.

1,716 citations

Journal ArticleDOI
TL;DR: The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported, demonstrating the feasibility of two-dimensional graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.
Abstract: The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported. The saturation velocity is attributed to scattering by interfacial phonons in the silicon dioxide layer supporting the graphene channels. These results demonstrate the feasibility of graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.

1,600 citations

Journal ArticleDOI
TL;DR: In this paper, Boron and nitrogen-doped graphenes are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres using a combination of experiment and theories based on first principles.
Abstract: Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.

1,579 citations

Journal ArticleDOI
TL;DR: In this paper, the current status of the intrinsic mechanical properties of the graphene-family of materials along with the preparation and properties of bulk graphene-based nanocomposites is thoroughly examined.

1,531 citations


Cites background from "Raman spectrum of graphene and grap..."

  • ...(c) Raman spectrum of bulk graphite and monolayer graphene under a 514 nm laser [86]....

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  • ...Reprinted (adapted) with permission from [86]....

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Journal ArticleDOI
TL;DR: A detailed review on the advances of chemical functionalization of graphene is presented in this article, where the surface modification of graphene oxide followed by reduction has been carried out to obtain functionalized graphene.

1,517 citations

References
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28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

18,940 citations