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Journal ArticleDOI

Raman spectrum of graphene and graphene layers.

TL;DR: This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
Abstract: Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers The D peak second order changes in shape, width, and position for an increasing number of layers, reflecting the change in the electron bands via a double resonant Raman process The G peak slightly down-shifts This allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area

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TL;DR: In this article, the authors reported results of micro-Raman spectroscopy investigation of the "graphene-like" mechanically exfoliated single-crystal bismuth telluride films with the thickness ranging from a few-nm to bulk limit.
Abstract: We report results of micro-Raman spectroscopy investigation of the "graphene-like" mechanically exfoliated single-crystal bismuth telluride films with the thickness ranging from a few-nm-range to bulk limit. It is found that the optical phonon mode A1u, which is not-Raman active in bulk bismuth telluride crystals, appears in the atomically-thin films due to crystal-symmetry breaking. The intensity ratios of the out-of-plane A1u and A1g modes to the in-plane Eg mode grow with decreasing film thickness. The evolution of Raman signatures with the film thickness can be used for identification of bismuth telluride crystals with the thickness of few-quintuple layers, which are important for topological insulator and thermoelectric applications.

172 citations

Journal ArticleDOI
TL;DR: In this article, the authors report on heat conduction properties of thermal interface materials with self-aligning magnetic graphene fillers, which can be oriented during the composite application to the surfaces, leading to a new method of thermal management of advanced electronics.

171 citations

Journal ArticleDOI
TL;DR: In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented, suggesting novel physical properties and applications in electronics and optoelectronics.
Abstract: As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth-abundant, low-cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

171 citations

Journal ArticleDOI
TL;DR: In this paper, the authors identify the other sources of early coulombic efficiency (CE) loss by examining a pseudographitic carbon with a state-of-the-art capacity, but with a purposely designed low surface area (14.5 m2 g−1) that disqualifies SEI from having a substantial role.
Abstract: Partially ordered but not graphitized carbons are widely employed for sodium and lithium ion battery (NIB and LIB) anodes, either in their pure form or as a secondary supporting phase for oxides, sulfides and insertion electrodes. These “pseudographitic” materials ubiquitously display a poor initial coulombic efficiency (CE), which has been historically attributed to solid electrolyte interface (SEI) formation on their large surface areas (up to ∼2500 m2 g−1). Here we identify the other sources CE loss by examining a pseudographitic carbon with a state-of-the-art capacity (>350 mA h g−1 for NIB, >800 mA h g−1 for LIB), but with a purposely designed low surface area (14.5 m2 g−1) that disqualifies SEI from having a substantial role. During the initial several (<5) cycles both Na and Li are irreversibly trapped in the bulk, with the associated CE loss occurring at higher desodiation/delithiation voltages. We measure a progressively increasing graphene interlayer spacing and a progressively increasing Raman G band intensity, indicating that the charge carriers become trapped not only at the graphene defects but also between the graphene planes hence causing them to both dilate and order. For the case of Li, we also unambiguously detected irreversible metal underpotential deposition (“nanoplating”) within the nanopores at roughly below 0.2 V. It is expected that in conventional high surface area carbons these mechanisms will be a major contributor to CE loss in parallel to classic SEI formation. Key implications to emerge from these findings are that improvements in early cycling CE may be achieved by synthesizing pseudographitic carbons with lower levels of trapping defects, but that for LIBs the large cycle 1 CE loss may be unavoidable if highly porous structures are utilized.

171 citations

Journal ArticleDOI
TL;DR: In this paper, a cost-effective, scalable, and sustainable process was developed to form graphene films from solution-processed common polymers directly on a SiO2/Si substrate.
Abstract: Because the direct formation of large, patterned graphene layers on active electronic devices without any physical transfer process is an ultimate important research goal for practical applications, we first developed a cost-effective, scalable, and sustainable process to form graphene films from solution-processed common polymers directly on a SiO2/Si substrate. We obtained few-layer graphene by heating the thin polymer films covered with a metal capping layer in a high-temperature furnace under low vacuum in an Ar/H2 atmosphere. We find that the metal capping layer appears to have two functions: prevention of vaporization of dissociated molecules and catalysis of graphene formation. We suggest that polymer-derived graphene growth directly on inert substrates in active electronic devices will have great advantages because of its simple, inexpensive, and safer process.

171 citations

References
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28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

18,940 citations