Raman spectrum of graphene and graphene layers.
TL;DR: This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
Abstract: Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers The D peak second order changes in shape, width, and position for an increasing number of layers, reflecting the change in the electron bands via a double resonant Raman process The G peak slightly down-shifts This allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area
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TL;DR: In this article, the authors used hexagonal boron nitride to encapsulate regions of graphene encapsulated in hexagonal BORON nitride of up to 180000 cm at room temperature and up to 9K at 9K.
Abstract: Heterostructures formed by stacking layered materials require atomically clean interfaces. However, contaminants are usually trapped between the layers, aggregating into blisters. We report a process to remove such blisters, resulting in clean interfaces. We fabricate blister-free regions of graphene encapsulated in hexagonal boron nitride of$\sim$5000$\mu $m$^{2}$, limited only by the size of the exfoliated flakes. These have mobilities up to$\sim$180000cm$^2$V$^{-1}$s$^{-1}$ at room temperature, and$\sim$1.8$\times$10$^6$cm$^2$V$^{-1}$s$^{-1}$ at 9K. We further demonstrate the effectiveness of our approach by cleaning heterostructures assembled using graphene intentionally exposed to polymers and solvents. After cleaning, these samples reach similar high mobilities. We also showcase the general applicability of our approach to layered materials by cleaning blisters in other heterostructures based on MoS$_{2}$. This demonstrates that exposure of graphene to processing-related contaminants is compatible with the realization of high mobility samples, paving the way to the development of fab-based processes for the integration of layered materials in (opto)-electronic devices.
169 citations
TL;DR: In this paper, the wavelength and polarization-dependent measurements of metal-graphene-metal photodetectors were performed to quantify and control the relative contributions of both photothermo- and photoelectric effects, adding to the overall photoresponse.
Abstract: Graphene's high mobility and Fermi velocity, combined with its constant light absorption in the visible to far-infrared range, make it an ideal material to fabricate high-speed and ultrabroadband photodetectors. However, the precise mechanism of photodetection is still debated. Here, we report wavelength and polarization-dependent measurements of metal-graphene-metal photodetectors. This allows us to quantify and control the relative contributions of both photothermo- and photoelectric effects, both adding to the overall photoresponse. This paves the way for a more efficient photodetector design for ultrafast operating speeds.
169 citations
TL;DR: TERS is shown to be capable of identifying defects, contaminants, and pristine graphene due to their different spectroscopic signatures, and of performing chemical imaging and allows the detection of smaller defects than visible by confocal Raman microscopy and a far more precise localization.
Abstract: Electronic properties in different graphene materials are influenced by the presence of defects and their relative position with respect to the edges. Their localization is crucial for the reliable development of graphene-based electronic devices. Graphene samples produced by standard CVD on copper and by the scotch-tape method on gold were investigated using tip-enhanced Raman spectroscopy (TERS). A resolution of <12 nm is reached using TERS imaging with full spectral information in every pixel. TERS is shown to be capable of identifying defects, contaminants, and pristine graphene due to their different spectroscopic signatures, and of performing chemical imaging. TERS allows the detection of smaller defects than visible by confocal Raman microscopy and a far more precise localization. Consecutive scans on the same sample area show the reproducibility of the measurements, as well as the ability to zoom in from an overview scan onto specific sample features. TERS images can be acquired in as few as 5 min with 32 × 32 pixels. Compared to confocal Raman microscopy, a high sensitivity for defects, edges, hydrogen-terminated areas or contaminated areas (in general for deviations from the two-dimensional structure of pristine graphene) is obtained due to selective enhancement as a consequence of the orientation in the electromagnetic field.
168 citations
Journal Article•
TL;DR: New combination modes in the range from 1650 to 2300 cm(-1) in single-(SLG), bi-, few-layer and incommensurate bilayer graphene (IBLG) on silicon dioxide substrates are observed and the peak frequency of the 1880 (2220) cm (-1) mode is observed to increase (decrease) linearly with increasing graphene layers.
Abstract: We have observed new combination modes in the range from 1650 to 2300 cm−1 in single-(SLG), bi-, few-layer and incommensurate bilayer graphene (IBLG) on silicon dioxide substrates. A peak at ∼1860 cm−1 (iTALO−) is observed due to a combination of the in-plane transverse acoustic (iTA) and the longitudinal optical (LO) phonons. The intensity of this peak decreases with increasing number of layers and this peak is absent for bulk graphite. The overtone of the out-of-plane transverse optical (oTO) phonon at ∼1750 cm−1, also called the M band, is suppressed for both SLG and IBLG. In addition, two previously unidentified modes at ∼2200 and ∼1880 cm−1 are observed in SLG. The 2220 cm−1 (1880 cm−1) mode is tentatively assigned to the combination mode of in-plane transverse optical (iTO) and TA phonons (oTO+LO phonons) around the K point in the graphene Brillouin zone. Finally, the peak frequency of the 1880 (2220) cm−1 mode is observed to increase (decrease) linearly with increasing graphene layers.
168 citations
TL;DR: The Fe3O4/GO composite may be a promising sorption material for the separation and preconcentration of heavy metal ions from aqueous solutions in environmental pollution cleanup.
Abstract: A composite of porous Fe3O4 hollow microspheres/graphene oxide (Fe3O4/GO) has been fabricated through a facile self-assembly approach. Driven by the mutual electrostatic interactions, the amine-functionalized Fe3O4 microspheres prepared by a hydrothermal method and then modified by 3-aminopropyltrimethoxysilane were decorated with negatively-charged GO sheets. The Fe3O4 microspheres were hollow with porous surfaces and the surfaces were successfully modified with the amine, which was confirmed by Fourier transform infrared spectroscopy. The specific saturation magnetization of Fe3O4/GO was 37.8 emu g−1. The sorption performance of Fe3O4/GO for Cr(VI) was evaluated. The maximum sorption capacity for Cr(VI) on Fe3O4/GO was 32.33 mg g−1, which was much higher than that of Fe3O4 microspheres. The GO sheets could not only prevent agglomeration of the Fe3O4 microspheres and enable a good dispersion of these oxide microspheres, but also substantially enhance the specific surface area of the composite. The Fe3O4/GO composite may be a promising sorption material for the separation and preconcentration of heavy metal ions from aqueous solutions in environmental pollution cleanup.
168 citations
References
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28 Jul 2005
TL;DR: PfPMP1）与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。
18,940 citations