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Journal ArticleDOI

Raman spectrum of graphene and graphene layers.

TL;DR: This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
Abstract: Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality We show that its electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers The D peak second order changes in shape, width, and position for an increasing number of layers, reflecting the change in the electron bands via a double resonant Raman process The G peak slightly down-shifts This allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area

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TL;DR: In this article, the authors provide an in-depth description of the physics of monolayer and bilayer graphene fermions, where the quasiparticles are massive chiral Dirac Fermions.
Abstract: The electronic properties of graphene, a two-dimensional crystal of carbon atoms, are exceptionally novel. For instance, the low-energy quasiparticles in graphene behave as massless chiral Dirac fermions which has led to the experimental observation of many interesting effects similar to those predicted in the relativistic regime. Graphene also has immense potential to be a key ingredient of new devices, such as single molecule gas sensors, ballistic transistors and spintronic devices. Bilayer graphene, which consists of two stacked monolayers and where the quasiparticles are massive chiral fermions, has a quadratic low-energy band structure which generates very different scattering properties from those of the monolayer. It also presents the unique property that a tunable band gap can be opened and controlled easily by a top gate. These properties have made bilayer graphene a subject of intense interest. In this review, we provide an in-depth description of the physics of monolayer and bilayer graphene f...

932 citations

Journal ArticleDOI
TL;DR: In this article, the synthesis of very thin sheets (between a few and ten atomic layers) of hexagonal boron nitride (h-BN), prepared either on a SiO2 substrate or freely suspended, is described.
Abstract: We describe the synthesis of very thin sheets (between a few and ten atomic layers) of hexagonal boron nitride (h-BN), prepared either on a SiO2 substrate or freely suspended. Optical microscopy, atomic force microscopy, and transmission electron microscopy have been used to characterize the morphology of the samples and to distinguish between regions of different thicknesses. Comparison is made to previous studies on single- and few-layer graphene. This synthesis opens the door to experimentally accessing the two-dimensional phase of boron nitride.

909 citations

Journal ArticleDOI
TL;DR: In this article, dual-gated graphene field effect transistors (FETs) using Al2O3 as top-gate dielectric were constructed using a thin Al film as a nucleation layer to enable the atomic layer deposition of Al 2O3.
Abstract: We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8,000 cm2/Vs at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering, and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

908 citations

Journal ArticleDOI
TL;DR: In this paper, dual-gated graphene field effect transistors using Al2O3 as top-gate dielectric were constructed using a thin Al film as a nucleation layer to enable the atomic layer deposition of Al 2O3.
Abstract: We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8000 cm2/V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

904 citations

References
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28 Jul 2005
TL;DR: PfPMP1)与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作�ly.
Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1(PfPMP1)与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用,在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员,通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

18,940 citations