Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing
01 Jan 2014-ECS Journal of Solid State Science and Technology (The Electrochemical Society)-Vol. 3, Iss: 11
TL;DR: In this article, the authors applied intense visible light irradiation to polycrystalline Si-thin polysilicon on glass substrates, which exhibited strong absorption features due to their amorphization by the application of a large implantation dose.
Abstract: Intense visible light irradiation was applied to phosphorous-implanted polycrystalline Si thin films on glass substrates, whichexhibited strong absorption features due to their amorphization by the application of a large implantation dose. Despite the shortpulsedurationofthevisiblelight,theuseofahigh-poweredandsubsequentlyintensifiedXearclampallowedforsignificantelectricalactivation even at near-ambient temperatures and above, surpassing the efficacy of conventional thermal activation processes. Usinga simple optical-thermal model, theoretical predictions indicate that the instantaneous temperatures of the phosphorous-implantedSi thin films reach approximately 680
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TL;DR: In this paper, the authors present the current state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion.
Abstract: Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects (vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.
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TL;DR: In this paper, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE) to study the mechanisms of TED.
Abstract: Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5×1012 to 1×1014/cm2 evolves into a distribution of {311} interstitial agglomerates during the initial annealing stages at 670–815 °C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {311} defects during Ostwald ripening with an activation energy of 3.8±0.2 eV. The excess interstitials drive substitutional B into electric...
618 citations
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TL;DR: On annealing a boron implanted Si sample at similar to800 degreesC, Boron in the tail of the implanted profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more.
Abstract: On annealing a boron implanted Si sample at similar to800 degreesC, boron in the tail of the implanted profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more. ...
231 citations
TL;DR: In this paper, the authors introduce present and future LTPS TFT technologies for SOG displays and present a low-temperature polycrystalline silicon (LTPS) thin-film transistors.
Abstract: The elimination of conventional peripheral LSI (large-scale integration) drivers is considered essential to the development of future low-cost, energy-efficient, lightweight, and thin displays. System-on-glass (SOG) displays are a type of display with various functional circuits integrated on a glass substrate. Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) make the integration of circuits possible because they can be assembled into complex, high-current driver circuits. Furthermore, LTPS TFTs are attracting attention for driving organic light-emitting devices (OLEDs). This article introduces present and future LTPS TFT technologies for SOG displays.
153 citations