Proceedings ArticleDOI
Realization of high efficiency 4H-SiC IMPATT diode using optimized doping steps
Gananath Dash,J. Pradhan,Sanjit Kumar Swain,S. R. Pattanaik +3 more
- pp 1-2
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TLDR
In this article, a new doping pattern in the form of doping steps is introduced in the avalanche zone and its effects on the terahertz characteristics of a 4H-SiC IMPATT Diode are explored.Abstract:
The electric field and width of the avalanche region are vital while determining the performance of an IMPATT diode In an attempt to optimize the same a new doping pattern in the form of doping steps is introduced in the avalanche zone and its effects on the terahertz characteristics of a 4H-SiC IMPATT Diode are explored It is exciting to observe a conversion efficiency of 1724 % from the IMPAT T diode with the proposed doping stepsread more
Citations
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Journal ArticleDOI
GaN/Al x Ga 1−x N/GaN heterostructure IMPATT diode for D-band applications
TL;DR: In this article, a structural impact ionization avalanche transit time (IMPATT) diode configured by GaN/AlxGa1−xN/GaN heterostructure is investigated at the operation frequency of D-band.
References
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Journal ArticleDOI
Ionization rates and critical fields in 4H silicon carbide
TL;DR: In this article, a hole to electron ionization coefficient ratio of up to 50 was observed for 4H SiC. This was attributed to the discontinuity of the conduction band for the direction along the c axis.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Experimental demonstration of a silicon carbide IMPATT oscillator
TL;DR: In this article, the first experimental demonstration of microwave oscillation in 4H-SiC impactionization-avalanche-transit-time (IMPATT) diodes is reported.
Journal ArticleDOI
Monte Carlo simulation of 4H-SiC IMPATT diodes
TL;DR: In this paper, a Monte Carlo particle (MCP) bipolar model for 4H-SiC consisting of three electron and two hole bands is developed to simulate the millimetre wave power generation by 4HSiC IMPATT diodes.
Journal ArticleDOI
Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz
TL;DR: In this paper, the potentials of 6H-SiC for application as a high power IMPATT diode through computer simulation experiment is explored and it is observed that the new material would far surpass its present rivals Si and GaAs in terms of power output at 140 GHz.