Realization of non-linear i-v curve with low power dissipation using linear ion drift memristor model
24 Sep 2015-pp 149-154
TL;DR: In this article, the parametric analysis of memristor adopting the linear ion-drift model to achieve low power dissipation while retaining the nonlinear i-v characteristics is discussed.
Abstract: Modern memories are very power hungry, larger in size, low retention period, low chip density and high cost Memristor is a missing passive circuit element and regarded as a new class of emerging non-volatile memories overcoming the above problems Memristor may be thought of an active as well as passive device based on the conditions of Memristance and Dynamic Negative Differential Resistance (DNDR) Memristor has been used for non-volatile memory applications, if and only if it produces non-linear pinched hysteresis curve If the size of the pinched hysteresis curve increases, power dissipation increases as well In this paper, we discuss the parametric analysis of memristor adopting the linear ion-drift model to achieve low power dissipation while retaining the nonlinear i-v characteristics
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01 Aug 2017
TL;DR: The characterization of memristor based on SPICE non-linear ion drift model focusing on various parametric results to achieve better i-v characteristics compared to linear ion-drift model are presented.
Abstract: In the age of information and communication, information storage with the capability of non-volatile low power has attracted considerable interest. Memristive devices tend to pose these attributes and were achieved using nanotechnology. However, to design circuits with these memristive devices, the characteristion needs to be described by a mathematical model. Many models such as linear ion-drift model, non-linear ion-drift model, ThrEshold Adaptive Memristor(TEAM) model have been proposed. These models should mimic the physical devices and also be computationally efficient. In the present paper, the characterization of memristor based on SPICE non-linear ion drift model focusing on various parametric results to achieve better i-v characteristics compared to linear ion-drift model are presented.
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TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Abstract: Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.
8,971 citations
"Realization of non-linear i-v curve..." refers background or methods in this paper
...Linear ion drift Memristor model: In the linear ion drift model [3], ions are free to move along the entire length of the bilayer structure (D)....
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...They are linear ion drift model [3], Non-linear ion drift model [4], Simmon tunnel barrier model [5] and TEAM model [6]....
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TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Abstract: A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{- \infty}^{t} v(\tau) d \tau is introduced as the fourth basic circuit element. An electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented. Many circuit-theoretic properties of memistors are derived. It is shown that this element exhibits some peculiar behavior different from that exhibited by resistors, inductors, or capacitors. These properties lead to a number of unique applications which cannot be realized with RLC networks alone. Although a physical memristor device without internal power supply has not yet been discovered, operational laboratory models have been built with the help of active circuits. Experimental results are presented to demonstrate the properties and potential applications of memristors.
7,585 citations
"Realization of non-linear i-v curve..." refers background in this paper
...Introduction: Memristor is a missing fourth fundamental passive circuit element, as theoretically first demonstrated in 1971 by Leon chua based on the symmetrical arguments [1]....
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TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Abstract: Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties in understanding and controlling the coupled electronic and ionic phenomena that dominate the behaviour of nanoscale oxide devices. An analytic theory of the ‘memristor’ (memory-resistor) was first developed from fundamental symmetry arguments in 1971, and we recently showed that memristor behaviour can naturally explain such coupled electron–ion dynamics. Here we provide experimental evidence to support this general model of memristive electrical switching in oxide systems. We have built micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching. We demonstrate that switching involves changes to the electronic barrier at the Pt/TiO2 interface due to the drift of positively charged oxygen vacancies under an applied electric field. Vacancy drift towards the interface creates conducting channels that shunt, or short-circuit, the electronic barrier to switch ON. The drift of vacancies away from the interface annilihilates such channels, recovering the electronic barrier to switch OFF. Using this model we have built TiO2 crosspoints with engineered oxygen vacancy profiles that predictively control the switching polarity and conductance. Nanoscale metal/oxide/metal devices that are capable of fast non-volatile switching have been built from platinum and titanium dioxide. The devices could have applications in ultrahigh density memory cells and novel forms of computing.
2,744 citations
TL;DR: In this article, a mathematical definition of a memristive device provides the framework for understanding the physical processes involved in bipolar switching and also yields formulas that can be used to compute and predict important electrical and dynamical properties of the device.
Abstract: Memristive devices are promising components for nanoelectronics with applications in nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing. Bipolar resistive switches based on metal oxides such as TiO2 have been identified as memristive devices primarily based on the “pinched hysteresis loop” that is observed in their current-voltage (i-v) characteristics. Here we show that the mathematical definition of a memristive device provides the framework for understanding the physical processes involved in bipolar switching and also yields formulas that can be used to compute and predict important electrical and dynamical properties of the device. We applied an electrical characterization and state-evolution procedure in order to capture the switching dynamics of a device and correlate the response with models for the drift diffusion of ionized dopants (vacancies) in the oxide film. The analysis revealed a notable property of nonlinear memristors: the energy required to switch a me...
688 citations
"Realization of non-linear i-v curve..." refers methods in this paper
...They are linear ion drift model [3], Non-linear ion drift model [4], Simmon tunnel barrier model [5] and TEAM model [6]....
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TL;DR: It is shown that the proposed TEAM, ThrEshold Adaptive Memristor model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models.
Abstract: Memristive devices are novel devices, which can be used in applications ranging from memory and logic to neuromorphic systems. A memristive device offers several advantages: nonvolatility, good scalability, effectively no leakage current, and compatibility with CMOS technology, both electrically and in terms of manufacturing. Several models for memristive devices have been developed and are discussed in this paper. Digital applications such as memory and logic require a model that is highly nonlinear, simple for calculations, and sufficiently accurate. In this paper, a new memristive device model is presented-TEAM, ThrEshold Adaptive Memristor model. This model is flexible and can be fit to any practical memristive device. Previously published models are compared in this paper to the proposed TEAM model. It is shown that the proposed model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models.
666 citations