Redesigning Mach-Zehnder Modulator with Ring Resonators
01 Jan 2018-pp 185-191
TL;DR: The work deals in the analysis on improving the favoured Mach-Zehnder modulator (MZM) and the results show the number of ring resonators that can be used with respect to the wavelength to improve the extinction ratio.
Abstract: Recent technological advances have allowed network users to transfer large files. This has increased the network traffic in Telecom and Data centres. Optical fibre communication has large bandwidth and channel capacity to meet the demands. Silicon photonics aims in improving the data transfer with efficiency on chip. Modulators play potent role in the process. The work deals in the analysis on improving the favoured Mach-Zehnder modulator (MZM). The results show the number of ring resonators that can be used with respect to the wavelength to improve the extinction ratio. Extinction ratio is very important when it comes to processing valuable data and that is improved with the help of the ring resonators in MZM.
Citations
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TL;DR: In this paper, a corrugated PN junction phase shifter on a silicon waveguide is designed and analyzed, and a circuit-level simulation analysis is performed to identify the maximum communication distance supported by this proposed phase shifters design in the silicon Mach Zehnder modulator.
Abstract: The essential requirement for an efficient optical modulator is to have high modulation efficiency at a high data rate. The performance of the phase shifter determines the efficiency of the modulator. In this paper, a corrugated PN junction phase shifter on a silicon waveguide is designed and analysed. Doped horizontal slabs of corrugated structure are designed to produce multiple PN junctions to maximise the index change that influences the optical modulation. With the travelling wave electrode, the optical group and RF effective index are matched to obtain high-speed modulation. The optimised design is imported in a silicon Mach Zehnder modulator, and circuit-level simulation analysis is performed. At 70Gbps, a maximum extinction ratio of 10.57dB with a bit error rate of 1.94 × 10− 6 is obtained at Vπ L of 0.75V.cm for the phase shifter length of 1.5mm. The energy per bit transmission is calculated to be 3.3pJ/bit. Further analysis is performed to identify the maximum communication distance supported by this proposed phase shifter design in the silicon Mach Zehnder modulator for the data centre requirements.
4 citations
TL;DR: In this paper, a phase shifter in silicon MZM (PS-MZM) was analyzed for its supporting transmission distance and bit rate at ITU-T recommended DWDM wavelength of 1552.5 nm.
Abstract: A silicon Mach Zehnder modulator (MZM) with high modulation efficiency was designed using a core-based split PN junction phase shifter. The novel design of the phase shifter improves the optical confinement, reduces the optical loss. The use of the travelling wave electrode improves the coupling between the microwave and optical mode. The proposed design achieved a high modulation efficiency of 0.75V.cm with 1.5mm phase shifter. With this modulation efficiency, an extinction ratio of 7.37dB and 1.69 × 10− 12 bit error rate was achieved at a bit rate of 90Gbps. The energy per bit transmission of the data was 3.91pJ/bit. The phase shifter in silicon MZM (PS-MZM) was analysed for its supporting transmission distance and bit rate at ITU-T recommended DWDM wavelength of 1552.5 nm. It ensures that PS-MZM is suitable for on-chip and off-chip communication data centre application in unguided (free space optics (FSO)) and guided (optical fibre) transmission medium. The proposed device can also be implemented in delay lines, switches etc.
3 citations
01 Jan 2022
TL;DR: In this article, a vertical PINI junction phase shifter is proposed to attain high modulation efficiency for high-speed data transmission in a high-performance modulator, where the optical group index is matched to the RF effective index to have a strong coupling of optical and RF mode for high speed operation.
Abstract: High-speed data transmission with high modulation efficiency is the essential condition for a high-performance modulator. The phase shifter plays a significant role in determining modulator performance. In this paper, a vertical PINI junction phase shifter is proposed to attain high modulation efficiency. The optical group index is matched to the RF effective index to have a strong coupling of optical and RF mode for high-speed operation. The circuit-level analysis is performed on the optimised phase shifter imported in a silicon Mach–Zehnder modulator. At 60Gbps, a maximum extinction ratio of 10.5 dB with a bit error rate of 5.45 × 10–6 is obtained at VπL of 1.25 V cm for the phase shifter length of 2.5 mm. The energy per bit transmission for the proposed transmission is calculated to be 4pJ/bit. The proposed designs demonstrated to support high data rate transmission for commercial applications. The proposed device can also find other applications such as optical switches, delay lines, and free space optics.
1 citations
15 Apr 2021
TL;DR: In this paper, a plus-shaped PN junction phase shifter is designed and analyzed to improve the modulation efficiency and reduce optical loss for high-speed data operation in data centers.
Abstract: Scaling up of photonic devices is the current research of interest to meet the alarming demand growth in the data centres. The efficiency of the modulator is determined by the performance of the phase shifter. In this paper, a plus-shaped PN junction phase shifter is designed and analysed. This design improved the modulation efficiency and reduced optical loss for high-speed data operation. The width of the P doped region and thickness of thedoped regions in the slabs are varied to obtain high modulation efficiency. The circuit-level simulation analysis was performed on the proposed phase shifterimported in a travelling wave electrode silicon Mach Zehnder modulator. At 80 Gbps, a maximum extinction ratio of 12.39 dB with a bit error rate of 8.67×10-8 was obtained at VπLπ of 1.05 V.cm for the length of the phase shifter of 3.5 mm. The calculated intrinsic 3 dB bandwidth is ~38 GHz and the energy per bit transmission is 1.71pJ/bit.Further analysis was performed to identify the maximum communication distance supported by this proposed phase shifter design in the silicon Mach Zehnder modulator for the data centre requirements.
21 Apr 2022
TL;DR: In this article , a phase shifter in a travelling wave electrode unbalanced silicon Mach Zehnder modulator achieved a 6.5 dB extinction ratio and 3.70× 1$0^{-5}$ bit error rate at 70 Gbps.
Abstract: The requirement of a high-speed silicon photonic modulator is to perform high speed efficient photonic modulation. The proposed PIPN phase shifter of length 2. 5mm obtained a high modulation efficiency of 1 V.cm. The proposed phase shifter in a travelling wave electrode unbalanced silicon Mach Zehnder modulator achieved a 6.5 dB extinction ratio and 3. 70× 1$0^{-5}$ bit error rate at 70 Gbps. The travelling wave electrode is used to attain a strong coupling of RF and optic mode. The energy required to transmit the bit is calculated as 1.97 $\mathrm{p}\mathrm{J}/\mathrm{b}\mathrm{i}\mathrm{t}$. The modulator is designed to meet the data centre futuristic demands and can also be used in other applications like optical switches, delay lines etc.
References
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TL;DR: The early work on optical circuits was associated with ferroelectric materials such as lithium niobate (LiNbO 3 ), and III-V semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP) based systems as discussed by the authors.
263 citations
TL;DR: A fully-integrated, silicon photonic transceiver is demonstrated in a silicon-on-insulator process using photonic microring resonator modulators for low power consumption.
Abstract: A fully-integrated, silicon photonic transceiver is demonstrated in a silicon-on-insulator process using photonic microring resonator modulators for low power consumption. The trade-offs between bandwidth and extinction ratio are discussed and motivate the use of transmit pre-emphasis for ring modulators to increase the interconnect data rate. The transmitter and receiver is demonstrated to data rates of 25 Gb/s with a BER of 10 ^-12. The total power consumption of the transceiver is 256 mW and demonstrates a link efficiency of 10.2 pJ/bit excluding laser power. At 25 Gb/s, the driver operates at 7.2 pJ/bit.
163 citations
22 Mar 2015
TL;DR: A 25Gb/s heterogeneously-integrated Silicon-Photonic transmitter is designed entirely in CMOS, consisting of a high-swing driver wire-bonded to a MZ modulator, demonstrating clean optical eye diagrams with > 4dB extinction ratio while consuming 0.52W.
Abstract: A 25Gb/s heterogeneously-integrated Silicon-Photonic transmitter is designed entirely in CMOS, consisting of a high-swing driver wire-bonded to a MZ modulator. Measurement results demonstrate clean optical eye diagrams with > 4dB extinction ratio while consuming 0.52W.
21 citations
13 Jul 2009
TL;DR: In this article, a review of recent silicon modulator research using ring modulators, electroabsorption modulators and Mach-Zehnder modulators are compared for specific applications.
Abstract: Recent silicon modulator research using ring modulators, electroabsorption modulators, and Mach-Zehnder modulators are reviewed and compared for specific applications.
20 citations
TL;DR: This work presents a CMOS-driven SiP multi-level optical transmitter implemented using a commercially available lateral p-n junction process that uses a Mach-Zehnder modulator segmented to increase speed and to lower the required power on a per segment basis to a level achievable with CMOS.
Abstract: Codesign and integration of optical modulators and CMOS drivers is crucial for high-speed silicon photonic (SiP) transmitters to reach their full potential for low-cost, low-power electronic-photonic integrated systems. We present a CMOS-driven SiP multi-level optical transmitter implemented using a commercially available lateral p-n junction process. It uses a Mach-Zehnder modulator (MZM) segmented to increase speed and to lower the required power on a per segment basis to a level achievable with CMOS. A multi-channel driver is designed and implemented in 130 nm RF CMOS, providing a swing of 4 V in a push-pull configuration at 20 Gbaud. Binary data at the CMOS input is manipulated via digital logic to produce the proper per-segment drive signals to generate a four-level pulse-amplitude modulation optical signal. Multi-level modulation is achieved using only binary signals as input (DAC-less). Cosimulation of the optical and electrical circuits shows good agreement with experiment. Reliable transmission is achieved without post-compensation at 28 Gb/s, and at 38 Gb/s when using post-compensation.
20 citations