Reflection and transmission of quasi-plane waves at the interface of piezoelectric semiconductors with initial stresses
24 Jun 2021-Applied Mathematics and Mechanics-english Edition (Springer Science and Business Media LLC)-Vol. 42, Iss: 7, pp 951-968
TL;DR: In this article, the reflection and transmission properties of quasi-longitudinal plane (QP) waves in an AlN-ZnO laminated composite structure were investigated and the algebraic equations were obtained by imposing boundary conditions on the common interface of the laminated structure.
Abstract: We examine the reflection and transmission phenomena of quasi-longitudinal plane (QP) waves in an AlN-ZnO laminated composite structure. The structure is designed under the influence of the initial stresses in which one carrier piezoelectric semiconductor (PSC) half-space is in welded contact with another PSC half-space. The secular equations in the transversely isotropic PSC material are derived from the general dynamic equation, taking the initial stresses into consideration. It is shown that the incident quasi-longitudinal wave (QP-mode) at the interface generates four types of reflected and transmitted waves, namely, QP wave, quasi-transverse (QSV) wave, electric-acoustic (EA) wave, and carrier plane (CP) wave. The algebraic equations are obtained by imposing the boundary conditions on the common interface of the laminated structure. Reflection and transmission coefficients of waves are obtained by implementing Cramer’s rule. Profound impacts of the initial stresses and exterior electric biasing field on the reflection and transmission coefficients of waves are investigated and presented graphically.
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TL;DR: In this article , the authors used Legendre polynomial to predict the guided dispersion curves in pre-stressed functionally graded piezoelectric-piezomagnetic materials (FGPPM) with negative magnetic permeability.
2 citations
TL;DR: In this paper , the influence of the piezoelectric positive-negative junction (PN junction) between two semiconductors with different doping types on the multi-field coupled wave propagation is studied.
Abstract: The influences of the piezoelectric positive-negative junction (PN junction) between two semiconductors with different doping types on the multi-field coupled wave propagation are studied in the present work. The layered structures of semiconductors are often used in intelligent devices, and the PN junction plays an important role for performance improvement. Due to the migration and diffusion of carriers, the electric potential and concentration of the carrier are graded distribution in the PN junction. This inhomogeneity results in the reflection and transmission of coupled waves, which are the complex of multiple physical fields including the mechanical, electric, and carrier fields. The state transfer equation method is used to obtain the transfer matrix of the PN junction, and the reflection and transmission waves under the plane strain situation are evaluated numerically. The energy fluxes of the reflection and transmission waves are estimated and used to validate the numerical results by the check of energy conservation. It is found that PN junction effects hinder the wave propagation and drastically enhance the reflection ability of the interface, especially, on the coupled carrier waves, and thus are very important and cannot be ignored for the wave propagation problem. The influences of external applied stress and bias electric field are also discussed.
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01 Jan 2023
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Book•
01 Jan 1973
TL;DR: In this article, the authors apply the material developed in the Volume One to various boundary value problems (reflection and refraction at plane surfaces, composite media, waveguides and resonators).
Abstract: This work, part of a two-volume set, applies the material developed in the Volume One to various boundary value problems (reflection and refraction at plane surfaces, composite media, waveguides and resonators). The text also covers topics such as perturbation and variational methods.
5,211 citations
TL;DR: In this paper, the authors show that for properly prepared material, significant amplification is expected up to the microwave frequencies, and at high frequencies, gain is reduced because electron diffusion smooths out the electron bunching necessary for amplification.
Abstract: An ultrasonic wave traveling in certain directions in a piezoelectric semiconductor such as cadmium sulfide can be amplified or attenuated by application of a dc electric field. The direct current flowing through the medium in the presence of an ultrasonic wave creates a traveling ac field which interacts with the ultrasonic wave. Amplification occurs when the drift velocity of the electrons exceeds the velocity of sound. For strongly piezoelectric semiconductors, amplification of as much as several percent per wavelength of path is obtainable. Calculations show that for properly prepared material, significant amplification is expected up to the microwave frequencies. At high frequencies, gain is reduced because electron diffusion smooths out the electron bunching necessary for amplification. The dc power required increases rapidly with frequency, and at frequencies above one or two thousand megacycles only pulsed operation seems feasible. Applications as a tool in ultrasonic studies, and for devices such as delay lines and amplifiers, are also discussed.
563 citations
Book•
16 Sep 2008
TL;DR: In this paper, the authors present linear equations for small fields superposed on Finite Biasing Fields. And they describe the effects of piezoelectric devices on strong and weak fields.
Abstract: Nonlinear Electroelasticity for Strong Fields.- Linear Piezoelectricity for Infinitesimal Fields.- Static Problems.- Vibrations of Finite Bodies.- Waves in Unbounded Regions.- Linear Equations for Small Fields Superposed on Finite Biasing Fields.- Cubic and Other Effects.- Piezoelectric Devices.
539 citations
TL;DR: In this paper, a plane elastic wave propagating in a piezoelectric crystal may be accompanied by longitudinal electric fields which provide an additional elastic stiffness when the crystal is also semiconducting, these fields produce currents and space charge resulting in acoustic dispersion and loss.
Abstract: A plane elastic wave propagating in a piezoelectric crystal may be accompanied by longitudinal electric fields which provide an additional elastic stiffness When the crystal is also semiconducting, these fields produce currents and space charge resulting in acoustic dispersion and loss A linear theory of this effect is developed, taking into account drift, diffusion, and trapping of carriers for both extrinsic and intrinsic semiconductors Conductivity modulation sets an upper limit on strain amplitude for a linear theory The directional characteristics and the magnitude of the effects are illustrated for CdS and GaAs The Appendix treats the interaction of an arbitrary acoustic plane wave with the electromagnetic fields in a piezoelectric crystal (based on a treatment by Kyame [J J Kyame, J Acoust Soc Am 21, 159 (1949); 26, 990 (1954)]) and further shows explicitly that only the effects of longitudinal electric fields need be considered
529 citations