Resistive Switching Behaviour of $\mathrm{PVP}/\mathrm{HfO}_{\mathrm{x}}$ Hybrid RRAM on Flexible Substrate
01 Apr 2020-
TL;DR: In this article, a hybrid resistive random access memory (RRAM) was demonstrated on flexible PET substrates to study their resistive switching characteristics and memory application, which exhibited decent repeatability of more than 100 cycles.
Abstract: Flexible devices have been in focus for their applications in wearable electronics, displays, sensors, and memory. $\mathrm{PVP}/\mathrm{HfO}_{\mathrm{x}}$ based hybrid resistive random access memory devices were demonstrated on flexible PET substrates to study their resistive switching characteristics and memory application. These RRAM devices exhibited decent repeatability of more than 100 cycles with excellent $I_{\mathrm{o}\mathrm{n}}/I_{\mathrm{off}}$ of ~106 at 0.2 V as read voltage. With retention time of more than 6000 s and reliable switching operation, the fabricated devices have potential to be embedded in flexible electronic applications. Moreover, conduction mechanism in devices was found to be ohmic at lower voltage levels in high resistance state (HRS) and space charge limited conduction at higher voltage levels, occurring mainly due to traps sites available in PVP and $\mathrm{HfO}_{\mathrm{x}}$ . The AFM image confirms the presence of pinholes at PVP surface which will eventually assist in filament formation.
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TL;DR: In this article, the authors introduce halide perovskites and their operating mechanism within a ReRAM device and review the recent notable achievements along with future challenges for ReRAM devices.
Abstract: Halide perovskite based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because their switching material—halide perovskite—has received considerable attention in recent years. Among the electrical characteristics of the material, its current–voltage (I–V) hysteresis, which may occur due to defect formation and migration, means that ReRAM can employ halide perovskites as a resistive switching material. Many studies have been conducted on resistive switching materials; however, the investigation of halide perovskites for ReRAM devices is still in the early research stages; therefore, the application of halide perovskites in ReRAM devices is a topic worth studying. Herein, we introduce halide perovskites and their operating mechanism within a ReRAM device. Moreover, recent notable achievements along with future challenges have been reviewed.
76 citations
TL;DR: The flexible ECM memristor exhibits high mechanical flexibility and stable memory retention under repeated cycles of bending and the reliability, uniformity, and switching voltage are much improved by the presence of the ITSs.
Abstract: We demonstrate the physical pictures of the localization of the conductive filaments (CFs) growth in flexible electrochemical metallization (ECM) memristors through an interfacial triggering (IT) into the polymer electrolyte. The IT sites (ITSs), capable of controlling the pathways of the CF growth, are formed at the electrode–polymer interfaces via the Ostwald ripening at low temperatures (below 230 °C). The injection and migration of metal ions and the resultant CF growth are found to be effectively controlled through the ITSs with the local electric field enhancement. The reliability, uniformity, and switching voltage of the device are much improved by the presence of the ITSs. Our flexible ECM memristor exhibits a high mechanical flexibility and a stable memory performance under repeated bending deformations.
46 citations
"Resistive Switching Behaviour of $\..." refers background in this paper
...The research in the years to come would be focused mainly towards wearable, stretchable, and bendable flexible electronics devices for applications such as flexible displays, wearable fitness trackers, RFID tags, sensors, and data storage [2, 3]....
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TL;DR: In this article, the authors studied the origin of resistive switching in polymethyl methacrylate (PMMA) films and analyzed the switching mechanism of Ag/PMMA/FTO devices.
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TL;DR: Hybrid CBRAM devices based on PVP/HfOx bilayer were investigated for their switching performance in this paper, where the pinholes formation in PVP layer guides the confined growth and dissolution of Ag conductive filament (CF) in the bilayer structure.
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