Resistive switching in transition metal oxides
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TLDR
In this paper, the authors review the current status of one of the alternatives, resistance random access memory (ReRAM), which uses a resistive switching phenomenon found in transition metal oxides.About:
This article is published in Materials Today.The article was published on 2008-06-01 and is currently open access. It has received 2641 citations till now. The article focuses on the topics: Resistive random-access memory & Non-volatile memory.read more
Citations
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Journal ArticleDOI
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
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Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
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Emergent phenomena at oxide interfaces
TL;DR: Recent technical advances in the atomic-scale synthesis of oxide heterostructures have provided a fertile new ground for creating novel states at their interfaces, with characteristic feature is the reconstruction of the charge, spin and orbital states at interfaces on the nanometre scale.
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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon,Kyung-min Kim,Jae Hyuck Jang,Jong Myeong Jeon,Min Hwan Lee,Gun Hwan Kim,Xiang-Shu Li,Gyeong-Su Park,Bora Lee,Seungwu Han,Miyoung Kim,Cheol Seong Hwang +11 more
TL;DR: In situ current-voltage and low-temperature conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments, which will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films.
References
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Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
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Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
TL;DR: It is demonstrated that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO3, and to be related to the self-doping capability of the early transition metal oxides.
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Reproducible switching effect in thin oxide films for memory applications
TL;DR: In this article, it was shown that positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns.
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Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Byung Joon Choi,Doo Seok Jeong,Seong Keun Kim,C. Rohde,Seol Choi,J. H. Oh,Honggon Kim,Cheol Seong Hwang,K. Szot,Rainer Waser,B. Reichenberg,S. Tiedke +11 more
TL;DR: In this article, the resistive switching mechanism of 20-to 57-nm-thick TiO2 thin films grown by atomic-layer deposition was studied by currentvoltage measurements and conductive atomic force microscopy.
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Electric-pulse-induced reversible resistance change effect in magnetoresistive films
S. Q. Liu,N. J. Wu,Alex Ignatiev +2 more
TL;DR: A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films.