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Journal ArticleDOI

Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method.

01 Apr 2017-Nano-micro Letters (Springer Berlin Heidelberg)-Vol. 9, Iss: 2, pp 15-15
TL;DR: The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field, which provides a facile way to obtain metal oxide nanowires-based ReRAM device in the future.
Abstract: The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 104 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.
Citations
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Journal ArticleDOI
TL;DR: The formation of a seed layer on the fluorine-doped tin oxide (FTO) glass substrate after treatment in TiCl4 solution, before the growth of TiO2 NRAs on the FTO substrate via a hydrothermal process, is shown to significantly improve the resistive switching performance of the resultingTiO2 NRA-based device.
Abstract: The electrical performance of TiO2 nanorod array (NRA)-based resistive switching memory devices is examined in this paper. The formation of a seed layer on the fluorine-doped tin oxide (FTO) glass substrate after treatment in TiCl4 solution, before the growth of TiO2 NRAs on the FTO substrate via a hydrothermal process, is shown to significantly improve the resistive switching performance of the resulting TiO2 NRA-based device. As fabricated, the Al/TiO2 NRA/TiOx layer/FTO device displayed electroforming-free bipolar resistive switching behavior while maintaining a stable ON/OFF ratio for more than 500 direct sweeping cycles over a retention period of 3 × 104 s. Meanwhile, the programming current as low as ∼10–8 A and 10–10 A for low resistance state and high resistance state respectively makes the fabricated devices suitable for low-power memristor applications. The TiOx precursor seed layer not only promotes the uniform and preferred growth of TiO2 nanorods on the FTO substrate but also functions as an ...

86 citations

Journal ArticleDOI
TL;DR: In this paper, a self-powered device concept that exploits a type of Jaboticaba-like carbon nanosphere@TiO2 nanowire (C@T) as a highly efficient, light-sensitive liquid (including but not limited to water, methanol, acetone, and ethanol) was introduced.
Abstract: Advanced intelligent electronic systems are usually integrated with a power supply, sensors and many other components, which can lead to their bulky sizes and complex structures. Here, we introduce a smart self-powered device concept that exploits a type of Jaboticaba-like carbon nanosphere@TiO2 nanowire (C@T) as a highly efficient, light-sensitive liquid (including but not limited to water, methanol, acetone, and ethanol) evaporation power generation (EPG) platform. Typically, the separate-piece EPG device could generate a flow-induced voltage (FIV) of 1.6 V under the evaporation of water, which was comparable to that of a commercial dry battery. When methanol was used, FIV was as high as 2.0 V. The FIV value of the EPG device using water could be easily scaled up to nearly 20 V and used for a stable power source in electronic devices. The photoresponse performance is an exclusive feature of EPG, which was successfully applied to a self-powered light-control switch. The significance of this work is that it not only provides a satisfactory and practical candidate for cheap and efficient evaporation power generation, but also opens up a green way for building advanced intelligent self-powered electronics.

69 citations

Journal ArticleDOI
TL;DR: In this paper, a titanium dioxide (TiO2) based memristor was fabricated using radio frequency (RF) reactive sputtering and its resistive switching characteristics and carrier transport mechanisms were investigated.

46 citations

Journal ArticleDOI
01 Aug 2017-Carbon
TL;DR: In this paper, the resistive switching behavior of a new type of device made of carbon nanowalls (CNWs) deposited on fluorine-doped tin oxide (FTO) substrate was reported.

40 citations

References
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Journal ArticleDOI
01 May 2008-Nature
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Abstract: Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.

8,971 citations

Journal ArticleDOI

4,540 citations


"Resistive Switching Memory of TiO2 ..." refers methods in this paper

  • ...This electroforming-free characteristic is attractive for ReRAM since it would simplify the memory operation and enable higher density memory devices [41]....

    [...]

Journal ArticleDOI
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.
Abstract: Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However, progress has been delayed by difficulties in understanding and controlling the coupled electronic and ionic phenomena that dominate the behaviour of nanoscale oxide devices. An analytic theory of the ‘memristor’ (memory-resistor) was first developed from fundamental symmetry arguments in 1971, and we recently showed that memristor behaviour can naturally explain such coupled electron–ion dynamics. Here we provide experimental evidence to support this general model of memristive electrical switching in oxide systems. We have built micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching. We demonstrate that switching involves changes to the electronic barrier at the Pt/TiO2 interface due to the drift of positively charged oxygen vacancies under an applied electric field. Vacancy drift towards the interface creates conducting channels that shunt, or short-circuit, the electronic barrier to switch ON. The drift of vacancies away from the interface annilihilates such channels, recovering the electronic barrier to switch OFF. Using this model we have built TiO2 crosspoints with engineered oxygen vacancy profiles that predictively control the switching polarity and conductance. Nanoscale metal/oxide/metal devices that are capable of fast non-volatile switching have been built from platinum and titanium dioxide. The devices could have applications in ultrahigh density memory cells and novel forms of computing.

2,744 citations

Journal ArticleDOI
TL;DR: In this paper, the Raman spectra of anatase have been observed in both natural and synthetic crystals and the six Raman active fundamentals predicted by group theory are all observed and assigned.
Abstract: Raman spectra of anatase have been observed in natural and synthetic crystals. Both crystals show the same spectral features. The Raman band occurring at 516 cm−1 at room temperature is split into two peaks centred at 519 cm−1 and 513 cm−1 at low temperature (73 K). The six Raman active fundamentals predicted by group theory are all observed and assigned. The spectra are analyzed by a simple model considering only short-range forces and the calculated vibrational frequencies are in good agreement with the observed Raman frequencies.

1,922 citations


"Resistive Switching Memory of TiO2 ..." refers background in this paper

  • ...The peaks at 141, 194, and 634 cm are assigned to the Eg modes, while the other two peaks at 512 and 395 cm are assigned to the B1g modes in TiO2 [34]....

    [...]

Journal ArticleDOI
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Abstract: Numerous candidates attempting to replace Si-based flash memory have failed for a variety of reasons over the years. Oxide-based resistance memory and the related memristor have succeeded in surpassing the specifications for a number of device requirements. However, a material or device structure that satisfies high-density, switching-speed, endurance, retention and most importantly power-consumption criteria has yet to be announced. In this work we demonstrate a TaO(x)-based asymmetric passive switching device with which we were able to localize resistance switching and satisfy all aforementioned requirements. In particular, the reduction of switching current drastically reduces power consumption and results in extreme cycling endurances of over 10(12). Along with the 10 ns switching times, this allows for possible applications to the working-memory space as well. Furthermore, by combining two such devices each with an intrinsic Schottky barrier we eliminate any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

1,900 citations