Resonant tunneling in semiconductor double barriers
TL;DR: In this article, a double-barrier structure with a thin GaAs sandwiched between two GaAlas barriers has been shown to have resonance in the tunneling current at voltages near the quasistationary states of the potential well.
Abstract: Resonant tunneling of electrons has been observed in double‐barrier structures having a thin GaAs sandwiched between two GaAlas barriers. The resonance manifests itself as peaks or humps in the tunneling current at voltages near the quasistationary states of the potential well. The structures have been fabricated by molecular beam epitaxy which produces extremely smooth films and interfaces.
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TL;DR: Theoretical and experimental work concerned with dynamic fluctuations has developed into a very active and fascinating subfield of mesoscopic physics as discussed by the authors, which can be used to obtain information on a system which is not available through conductance measurements.
2,086 citations
01 Oct 1999
TL;DR: In this article, the authors introduce the concept of quantum confined systems and single electron phenomena in nanodevices, as well as interference in diffusive transport and temperature decay of fluctuations.
Abstract: 1. Introduction 2. Quantum confined systems 3. Transmission in nanostructures 4. Quantum dots and single electron phenomena 5. Interference in diffusive transport 6. Temperature decay of fluctuations 7. Non-equilibrium transport and nanodevices.
1,291 citations
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.
Abstract: We have investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films. When carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1. When carrier concentration was increased to 4×1018cm−3, the conduction mechanism changed to degenerate conduction and room-temperature Hall mobility was steeply increased to >10cm2(Vs)−1, showing metal–insulator transition behavior. These results are explained by percolation conduction over distribution of potential barriers formed around conduction band edge. The potential distribution is a consequence of potential modulation originating from random distribution of Ga3+ and Zn2+ ions in the crystal structure of InGaO3(ZnO)5.
1,232 citations
TL;DR: In this paper, the properties of quasi-two-dimensional semiconductor quantum dots are reviewed, and the formation of the so-called maximum-density droplet and its edge reconstruction is discussed.
Abstract: The properties of quasi-two-dimensional semiconductor quantum dots are reviewed. Experimental techniques for measuring the electronic shell structure and the effect of magnetic fields are briefly described. The electronic structure is analyzed in terms of simple single-particle models, density-functional theory, and "exact" diagonalization methods. The spontaneous magnetization due to Hund's rule, spin-density wave states, and electron localization are addressed. As a function of the magnetic field, the electronic structure goes through several phases with qualitatively different properties. The formation of the so-called maximum-density droplet and its edge reconstruction is discussed, and the regime of strong magnetic fields in finite dot is examined. In addition, quasi-one-dimensional rings, deformed dots, and dot molecules are considered. (Less)
1,133 citations
Cites background from "Resonant tunneling in semiconductor..."
...…et al., 1973) and the demonstration of carrier confinement in reduced dimensions by electron and optical spectroscopy in GaAsAlGaAs quantum wells (Chang, Esaki, and Tsu, 1974; Dingle, Gossard, and Wiegmann, 1974; Esaki and Chang, 1974) were of crucial importance for further developments in…...
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1,069 citations
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TL;DR: In this article, the transport properties of a finite superlattice from the tunneling point of view have been computed for the case of a limited number of spatial periods or a relatively short electron mean free path.
Abstract: We have computed the transport properties of a finite superlattice from the tunneling point of view. The computed I‐V characteristic describes the experimental cases of a limited number of spatial periods or a relatively short electron mean free path.
1,996 citations
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
Abstract: Field emission and thermionic-field (T-F) emission are considered as the phenomena responsible for the excess currents observed both in the forward and reverse directions of Schottky barriers formed on highly doped semiconductors. Voltage-current characteristics are derived for field and thermionic-field emission in the forward and reverse regime. The temperatures and voltages where these phenomena are predominent for a given diode are discussed. Comparison with experimental results on GaAs and Si diodes shows good agreement between theory and experiments.
1,268 citations
487 citations
TL;DR: In this article, photoresponse measurements were made to determine the compositional dependence of the Ga1−xAlxAs direct Γ15→Γ1 and indirect Γ 15→X1 energy gaps.
Abstract: Photoresponse measurements were made to determine the compositional dependence of the Ga1−xAlxAs direct Γ15→Γ1 and indirect Γ15→X1 energy gaps. These data, together with other information, show that the crossover composition and energy gap are between 0.35
132 citations