Review of MOS Models for Use in Computer-Aided Design (Circuit Simulation) of LSI Circuits

TLDR: Equations of threshold voltage and device current have been presented in a generalized way from where the different proposed models have been derived as approximations to reality.

Abstract: A review study of various MOS models proposed in the literature for use in circuit simulation has been carried out. Equations of threshold voltage and device current have been presented in a generalized way from where the different proposed models have been derived as approximations to reality. For each approximation, the underlying physical assumptions have been discussed so that the user of the model may have a clear physical picture of the model he is using along with the implications of the modelling approximations used for accuracy and applicability to his situation before deciding to use the model. The models covered include various levels of models used in popular circuit simulation programs. Modelling of various intrinsic device capacitances has also been discussed along with the underlying physical meaning of the modelling equations used.