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Journal ArticleDOI

Review of Thermal Packaging Technologies for Automotive Power Electronics for Traction Purposes

11 Jul 2018-Journal of Electronic Packaging (American Society of Mechanical Engineers)-Vol. 140, Iss: 4, pp 040801
About: This article is published in Journal of Electronic Packaging.The article was published on 2018-07-11. It has received 74 citations till now. The article focuses on the topics: Traction (orthopedics) & Power electronics.
Citations
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Proceedings ArticleDOI
31 May 2022
TL;DR: In this article , the authors applied a flat or angled confining wall with conical surface modifications of varying height under each jet in a three-by-three array of water, and the velocity vector fields were generated in two planes.
Abstract: The effectiveness of jet impingement cooling is heavily tied to its flow mechanics. The region under the jet, termed the stagnation region, sees improved heat transfer through the suppression of the thermal boundary layer. Between the jets, in the fountain region, a secondary peak in heat transfer is generated through the interactions between the jets. Particle image velocimetry flow visualization was used to analyze these flow behaviors when applying a flat or angled confining wall with conical surface modifications of varying height under each jet in a three-by-three array of water. Velocity vector fields were generated in two planes – through the central row of jets, the jet plane, and between rows of jets, the fountain plane. In the jet plane, crossflow was observed to affect the downstream fountain and jet, potentially reducing the effectiveness of these features to dissipate heat. In the fountain plane, both the angled wall and surface modifications promoted the development of secondary fountains, which arise out of fountain-to-fountain interaction. As these are located the furthest distance from the impinging jets, obtaining well-developed secondary fountains is essential to reducing hotspots and achieving surface temperature uniformity. For the flat wall cases, the cones were observed to aid in development of secondary fountains and crossflow mitigation. The angled wall was also effective at allowing spent fluid to depart from the impingement surface. Along the top of the visual field with the angled confining wall, peak y-velocities ranging from 0.67 to 0.79 m/s. These indicate the effectiveness of both the angled confining wall and cone surface modifications to promote secondary fountain development, and hence mitigate detrimental crossflow effects.

1 citations

Proceedings ArticleDOI
01 Jun 2021
TL;DR: In this article, a novel integrated cooling strategy is introduced for further miniaturization of power electronics package, where copper leads or vapor chambers are utilized as multi-functional layers for both power delivery and heat spreading.
Abstract: Power electronics modules increasingly require compact and high-performance thermal packaging solutions capable of handling the resulting higher power densities. Double-sided cooled packages have been a promising solution to significantly reduce overall thermal resistance of packages below 0.2 K.cm2/W. However, components with only single function prevent further reduction in the overall volume of the package. In this paper, a novel integrated cooling strategy is introduced for further miniaturization of power electronics package, where copper leads or vapor chambers are utilized as multi-functional layers for both power delivery and heat spreading. Parametric thermo-mechanical modeling is carried out with heat conduction-based models to understand the heat spreading and heat removal behavior of the integrated cooling solution. Despite the reduced number of package layers in the integrated cooling solution, thermomechanical performance enhancement is demonstrated over the standard package when vapor chambers are used to spread heat more effectively. Relative variation of one-dimensional and spreading thermal resistances of vapor chambers shows that an increase in the overall thickness of vapor chambers is only useful up to a certain cutoff thickness, beyond which thermal performance is reduced and package volume is increased excessively. If sufficiently high effective lateral thermal conductivity is achieved, use of ultra-thin vapor chambers is found to be even more advantageous to maximize power density of future power modules.

1 citations

Journal ArticleDOI
TL;DR: In this article , a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer is presented, which is an effective method for suppress bipolar degradation in 4HSiC power-semiconductor devices while maintaining device performance.
Abstract: Abstract 4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking-faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current–voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.

1 citations

Proceedings ArticleDOI
01 Feb 2019
TL;DR: In this paper, high quality joints made with a small bond pressure, 53 kPa, were fabricated for the off-eutectic Au-Ge system, and the effective melting point was found to be at least 460°C, or 100°C above the eutective isotherm of the binary Au/Ge system.
Abstract: Off-eutectic Au–Ge, $10 \pm 2$ at.% Ge, were formed between Au metallized Si substrates to investigate their high temperature compatibility. High quality joints made with a small bond pressure, 53 kPa, were fabricated. The joints comprised three different types of morphologies; (1) a layered structure of Au / Au–Ge / Au, (2); a layered structure of Au / Au–Ge / Au where some sections of the central Au–Ge band were replaced by a Au section that extended across the joint, and (3); a roughly homogenous Au layer. Joints formed with a higher bond line pressure, 7.6 MPa, were of a reduced quality with voids and cracks at the original bond line. The shear strength of the fabricated joints was found to be at least 50 MPa, and the fracture mode was an adhesive fracture at the adhesion layer. The effective melting point were found to be at least 460°C, or 100°C above the eutectic isotherm of the binary Au–Ge system. Electrical resistivity measurements confirmed a melting process at the eutectic isotherm by an abrupt increase in resistivity.

1 citations

References
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Journal ArticleDOI
TL;DR: In this paper, a water-cooled integral heat sink for silicon integrated circuits has been designed and tested at a power density of 790 W/cm2, with a maximum substrate temperature rise of 71°C above the input water temperature.
Abstract: The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high-aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water-cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71°C above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh-speed VLSI circuits.

4,214 citations

Journal ArticleDOI
TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Abstract: Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

1,648 citations

Journal ArticleDOI
TL;DR: In this article, the performance of a few graphene layer n ∼ 4, with a thickness of ∼ 2 nm, was investigated for epoxy composites and it was shown that the G4 GNPs provide a thermal conductivity enhancement of more than 3000% (loading of ∼25 vol %).
Abstract: Natural graphite was intercalated, thermally exfoliated, and dispersed in acetone to prepare graphite nanoplatelets (GNPs, Gn) of controlled aspect ratio. Thermal conductivity measurements indicate that few graphene layer Gn, where n ∼ 4, with a thickness of ∼2 nm function as a very efficient filler for epoxy composites. When embedded in an epoxy matrix, the G4 GNPs provide a thermal conductivity enhancement of more than 3000% (loading of ∼25 vol %), and a thermal conductivity κ = 6.44 W/mK, which surpasses the performance of conventional fillers that require a loading of ∼70 vol % to achieve these values. We attribute the outstanding thermal properties of this material to a favorable combination of the high aspect ratio, two-dimensional geometry, stiffness, and low thermal interface resistance of the GNPs.

981 citations

Journal ArticleDOI
TL;DR: In this article, the effects of the channel size on the flow patterns and heat transfer and pressure drop performance are reviewed in small hydraulic diameter channels, and the fundamental questions related to the presence of nucleate boiling and characteristics of flow boiling in microchannels and minichannels in comparison to that in the conventional channel sizes (3 mm and above) are addressed.

840 citations

Journal ArticleDOI
Issam Mudawar1
TL;DR: This paper explores the recent research developments in high-heat-flux thermal management and demonstrates that, while different cooling options can be tailored to the specific needs of individual applications, system considerations always play a paramount role in determining the most suitable cooling scheme.
Abstract: This paper explores the recent research developments in high-heat-flux thermal management. Cooling schemes such as pool boiling, detachable heat sinks, channel flow boiling, microchannel and mini-channel heat sinks, jet-impingement, and sprays, are discussed and compared relative to heat dissipation potential, reliability, and packaging concerns. It is demonstrated that, while different cooling options can be tailored to the specific needs of individual applications, system considerations always play a paramount role in determining the most suitable cooling scheme. It is also shown that extensive fundamental electronic cooling knowledge has been amassed over the past two decades. Yet there is now a growing need for hardware innovations rather than perturbations to those fundamental studies. An example of these innovations is the cooling of military avionics, where research findings from the electronic cooling literature have made possible the development of a new generation of cooling hardware which promise order of magnitude increases in heat dissipation compared to today's cutting edge avionics cooling schemes.

824 citations