RF Front-End Circuits and Architectures for IoT/LTE-A/5G Connectivity
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This article is published in Wireless Communications and Mobile Computing.The article was published on 2018-10-01 and is currently open access. It has received 15 citations till now. The article focuses on the topics: LTE Advanced & RF front end.read more
Citations
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All-Digital I/Q RF-DAC
TL;DR: This thesis proposes a wideband, high-resolution, all-digital orthogonal I/Q radio-frequency digital-to-analog (RF-DAC), which is discussed that contemporary RF transceivers must support most of multi-mode/multiband communication standards such as Wi-Fi, Bluetooth, and Fourth Generation (4G) of 3GPP cellular.
Lte And The Evolution To 4g Wireless Design And Measurement Challenges
TL;DR: Thank you for reading lte and the evolution to 4g wireless design and measurement challenges and maybe you have knowledge that, people have search hundreds of times for their favorite books, but end up in malicious downloads.
Journal ArticleDOI
Medical image analysis based on deep learning approach.
Muralikrishna Puttagunta,S. Ravi +1 more
TL;DR: Deep Learning Approach (DLA) has been widely used in medical imaging to detect the presence or absence of the disease as discussed by the authors, and most of the implementations concentrate on the X-ray images, computerized tomography, mammography images, and digital histopathology images.
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Securing 5G-IoT Device Connectivity and Coverage Using Boltzmann Machine Keys Generation
Anand Singh Rajawat,Pradeep Bedi,S. B. Goyal,Piyush Kumar Shukla,Sajjad Shaukat Jamal,Adel R. Alharbi,Amer Aljaedi +6 more
TL;DR: In this paper, the authors proposed a Boltzmann machine (BMKG)-based encryption algorithm for securing 5G-enabled IoT device network environment and compared various asymmetric algorithms for key exchange.
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Time series classification based on statistical features
Yuxia Lei,Zhongqiang Wu +1 more
TL;DR: The proposed statistical feature approach in fully convolutional time series classification improved the classification effects of FCN and the residual network (ResNet), which means that it has a generalization ability to the network structures.
References
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Journal ArticleDOI
Next Generation 5G Wireless Networks: A Comprehensive Survey
TL;DR: This survey makes an exhaustive review of wireless evolution toward 5G networks, including the new architectural changes associated with the radio access network (RAN) design, including air interfaces, smart antennas, cloud and heterogeneous RAN, and underlying novel mm-wave physical layer technologies.
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Application of Non-Orthogonal Multiple Access in LTE and 5G Networks
TL;DR: A systematic treatment of non-orthogonal multiple access, from its combination with MIMO technologies to cooperative NOMA, as well as the interplay between N OMA and cognitive radio is provided.
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A Generalized Memory Polynomial Model for Digital Predistortion of RF Power Amplifiers
TL;DR: This paper relates the general Volterra representation to the classical Wiener, Hammerstein, Wiener-Hammerstein, and parallel Wiener structures, and describes some state-of-the-art predistortion models based on memory polynomials, and proposes a new generalizedMemory polynomial that achieves the best performance to date.
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Digital predistortion of wideband signals based on power amplifier model with memory
Jungsang Kim,K. Konstantinou +1 more
TL;DR: In this paper, memory effects in the power amplifier limit the performance of digital predistortion for wideband signals, and novel algorithms that take into account such effects are proposed to solve the problem.
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All-digital PLL and transmitter for mobile phones
Robert Bogdan Staszewski,John Wallberg,Sameh S. Rezeq,Chih-Ming Hung,Oren Eliezer,Sudheer Vemulapalli,C. Fernando,Kenneth J. Maggio,Robert B. Staszewski,N. Barton,Meng-Chang Lee,P. Cruise,Manouchehr Entezari,Khurram Muhammad,Dirk Leipold +14 more
TL;DR: The first all-digital PLL and polar transmitter for mobile phones is presented, exploiting the new paradigm of a deep-submicron CMOS process environment by leveraging on the fast switching times of MOS transistors, the fine lithography and the precise device matching, while avoiding problems related to the limited voltage headroom.