Journal ArticleDOI
Role of Amino-Acid Adsorption on Silica and Silicon Nitride Surfaces during STI CMP
Y. Nagendra Prasad,S. Ramanathan +1 more
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TLDR
In this article, the role of adsorption of the amino acids L-proline and L-arginine on silicon dioxide and silicon nitride surfaces was characterized as a function of pH and concentration using thermogravimetric analysis.Abstract:
Selectivity (oxide/nitride polish rate) is a critical factor during chemical mechanical polishing (CMP) of shallow trench isolation (STI) structure, and it can be modified by adding amino acids to the slurry. The role of adsorption of the amino acids L-proline and L-arginine, on silicon dioxide and silicon nitride surfaces was characterized as a function of pH and concentration using thermogravimetric analysis. The results suggest that the adsorption behavior does not correlate with the polishing behavior of STI CMP and hence it may not play a key role in changing the selectivity.read more
Citations
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Journal ArticleDOI
Chemical mechanical planarization: slurry chemistry, materials, and mechanisms.
TL;DR: This work focuses on the application of CMP to FEOL and MOL systems, which combines low-k and Ultralow-k materials, and the challenges faced by these systems in the aftermath of the Chernobyl disaster.
Journal ArticleDOI
Shallow Trench Isolation Chemical Mechanical Planarization: A Review
TL;DR: In this paper, a review of high selectivity shallow trench isolation (STI) CMP slurries is presented along with the characteristics of the colloidal dispersions like the abrasives, additives, the interactions between them and with the films being planarized and the associated pH range in which the high selectivities are observed.
Journal ArticleDOI
Role of Different Additives on Silicon Dioxide Film Removal Rate during Chemical Mechanical Polishing Using Ceria-Based Dispersions
TL;DR: In this paper, the role of several additives used with ceria-based dispersions to polish silicon dioxide films and investigate their interaction with both the abrasives and silicon dioxide film using several techniques.
Journal ArticleDOI
The effect of hydrogen peroxide on polishing removal rate in CMP with various abrasives
R. Manivannan,S. Ramanathan +1 more
TL;DR: The effect of hydrogen peroxide in chemical planarization slurries for shallow trench isolation was investigated in this article, where various abrasives used in this study were ceria, silica, alumina, zirconia, titania, silicon carbide, and silicon nitride.
Patent
Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
TL;DR: In this article, an aqueous polishing composition has been found, the composition comprising at least one type of abrasive particles which are positively charged when dispersed in an anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices.
References
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Journal ArticleDOI
Chemical processes in glass polishing
TL;DR: In this article, a detailed mechanico-chemical model for the glass polishing process is proposed, and the central chemical process which occurs is the interaction of both the glass surface and the polishing particle with water.
Book
Chemical Mechanical Planarization of Microelectronic Materials
TL;DR: In this article, historical perspective CMP: variables and manipulations electrochemical and mechanical concepts for CMP processes copper CMP CMP of other materials post CMP cleaning, and a discussion of the relationship between CMP and manipulation.
Journal ArticleDOI
Chemical mechanical planarization for microelectronics applications
TL;DR: An overview of the CMP process in general, the science and mechanism of polishing, different metal and dielectric CMP processes as well as the future trends are discussed in this paper.
Journal ArticleDOI
Mechanism of polishing of SiO2 films by CeO2 particles
TL;DR: In this paper, the authors examined the polishing mechanism in chemical mechanical polishing of a thermally grown SiO 2 film by CeO 2 particles, and the surface structure of the film and the waste were investigated by various analytical means.
BookDOI
Chemical-mechanical planarization of semiconductor materials
TL;DR: In this paper, the authors present a detailed overview of CMP technology and its application in metal CMP processes, as well as equipment used in CMP process and tools used to clean CMP slurry.
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