Role of Charged Species on the Growth of GaN Films by Modified Activated Reactive Evaporation
TL;DR: In this article, the role of charged species N2 + on the growth of GaN films by modified activated reactive evaporation MARE was reported, where substrate is subjected to low energy nitrogen ion bombardment by keeping it in conjunction with the radio frequency cathode.
Abstract: We report the role of charged species N2 + on the growth of GaN films by modified activated reactive evaporation MARE . In MARE technique, substrate is subjected to low energy nitrogen ion bombardment by keeping it in conjunction with the radio frequency cathode. The low energy ion irradiation contributes to the effective formation of GaN as well as in the drastic reduction of the oxygen impurity content by resputtering of the weakly bonded oxygen adatoms. Significant reduction in oxygen impurity can be achieved in the MARE by increasing the concentration of the charged species in the plasma. © 2010 The Electrochemical Society. DOI: 10.1149/1.3512991 All rights reserved.
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21 Mar 1997
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
Abstract: Physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GaN p-Type GaN InGaN Zn and Si co-doped InGaN/AlGaN double-heterostructure blue and blue-green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGaN MQW LDs latest results - lasers with self-organized InGaN quantum dots
3,805 citations
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Abstract: The status of research on both wurtzite and zinc‐blende GaN, AlN, and InN and their alloys is reviewed including exciting recent results. Attention is paid to the crystal growth techniques, structural, optical, and electrical properties of GaN, AlN, InN, and their alloys. The various theoretical results for each material are summarized. We also describe the performance of several device structures which have been demonstrated in these materials. Near‐term goals and critical areas in need of further research in the III–V nitride material system are identified.
2,484 citations
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Abstract: Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures and devices. The chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices. The development of growth methods like metalorganic chemical vapour deposition and plasma-induced molecular beam epitaxy has resulted in remarkable improvements in the structural, optical and electrical properties. New developments in precursor chemistry, plasma-based nitrogen sources, substrates, the growth of nucleation layers and selective growth are covered. Deposition conditions and methods used to grow alloys for optical bandgap and lattice engineering are introduced. The review is concluded with a description of recent Group III-nitride semiconductor devices such as bright blue and white light-emitting diodes, the first blue-emitting laser, high-power transistors, and a discussion of further applications in surface acoustic wave devices and sensors.
1,386 citations
TL;DR: In this article, an ex situ and in situ cleaning procedure for AlN and GaN surfaces was investigated and achieved, and it was shown that remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450°C, but not efficient for oxide removal.
Abstract: Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been investigated and achieved. Exposure to HF and HCl solutions produced the lowest coverages of oxygen on AlN and GaN surfaces, respectively. However, significant amounts of residual F and Cl were detected. These halogens tie up dangling bonds at the nitride surfaces hindering reoxidation. The desorption of F required temperatures >850 °C. Remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450 °C, but was not efficient for oxide removal. Annealing GaN in NH3 at 700–800 °C produced atomically clean as well as stoichiometric GaN surfaces.
278 citations
TL;DR: In this paper, the X-ray photo-electron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750 °C for up to 25 h. This oxide was determined to be the monoclinic β-Ga2O3 using glancing angle x-ray diffraction.
Abstract: The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750 °C for up to 25 h. However, at 900 °C the growth of an oxide approximately 5000 A thick was observed after 25 h. This oxide was determined to be the monoclinic β-Ga2O3 using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga–O to Ga–N bonding. The Ga L3M45M45 core level binding energy was also investigated and β-Ga2O3 and GaN each presented a characteristic peak shape.
228 citations