Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm
TL;DR: In this paper, the authors achieved room-temperature c.w. operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy at 1.56 μm.
Abstract: Room-temperature c.w. operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1.56 μm. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 mA for a 17 μm wide oxide-defined stripe laser.
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TL;DR: In this article, a GaInAsP/InP BH laser emitting a nominal wavelength of 1.61 μm was modulated by a sinusoidal current at frequencies in the range of 0.2-2 GHz.
Abstract: Wavelength shift during the period of direct modulation (dynamic wavelength shift) for injection lasers having a BH structure has been investigated both experimentally and theoretically. A GaInAsP/InP BH laser emitting a nominal wavelength of 1.61 μm was modulated by a sinusoidal current at frequencies in the range of 0.2-2 GHz. The full width of the dynamic wavelength shift was 0.35 nm at a modulation frequency of 1.8 GHz, and a modulation depth of 63 percent at a bias current 1.14 times the threshold current. It was found that the width of the dynamic wavelength shift increases with proportion to the modulation depth, and with inverse proportion to the bias current at a frequency below 1 GHZ. The differential coefficient dn/dN of refractive index n for carrier density N in the active region was measured for the purpose of the analysis. The value obtained is -1.2 \times 10^{-20} cm3. The dynamic shift of the lasing wavelength was found to be characteristic of the change of the refractive index induced by the oscillation of carrier density in the active region during intensity modulation. The theoretical shift shows maximum value at a resonance-like modulation frequency. The peak height of the resonance wavelength shift is strongly affected by carrier diffusion in the transverse direction, and has a minimum value when stripe width is nearly equal to carrier diffusion length.
123 citations
TL;DR: In this paper, the quaternary active layer was realized in 1.5 µm region by low temperature liquid phase epitaxial growth and low threshold current of 25 mA under CW operation was achieved at 26°C.
Abstract: The buried-heterostructure, in which the quaternary active layer is completely surrounded by InP crystal, has been realized in 1.5 µm region by low temperature liquid phase epitaxial growth. Low threshold current of 25 mA under CW operation was achieved at 26°C. This is the lowest value so far reported on the InP/GaInAsP laser in 1.5 µm wavelength region.
50 citations
TL;DR: The requirements and constraints on components for long-wavelength monomode systems are discussed and a brief assessment of the future role of guided-wave optical devices is assessed.
Abstract: This review discusses the requirements and constraints on components for long-wavelength monomode systems. In particular it critically reviews the current status of fibre, splicing, cabling, laser, detector, receiver and systems research; emphasis is placed on practical achievements rather than just speculative possibilities. The review concludes with a brief assessment of the future role of guided-wave optical devices.
42 citations
TL;DR: Research activities on semiconductor lasers related to optical communications and information technologies are reviewed in this paper, where the authors present a review of the most relevant research works in this area, including:
Abstract: Research activities on semiconductor lasers related to optical communications and information technologies are reviewed.
39 citations
Cites background from "Room temperature c.w. operation of ..."
...In 1979, lasers operating at 1.55 m were reported by Arai of the authors’ group [25], Akiba [26], Kawaguchi [27], and Kaminow [28]....
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...55 m were reported by Arai of the authors’ group [25], Akiba [26], Kawaguchi [27], and Kaminow [28]....
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TL;DR: In this article, a review of long-wavelength optical fiber communications, especially for singlemode semiconductor lasers at the longwavelength range of 1.5 /spl mu/m and the dynamics of their lasing wavelength properties, which limit the transmission bandwidth of a single-mode fiber, are reviewed.
Abstract: Research activities devoted to long-wavelength optical fiber communications, especially for single-mode semiconductor lasers at the long-wavelength range of 1.5 /spl mu/m and the dynamics of their lasing wavelength properties, which limit the transmission bandwidth of a single-mode fiber, are reviewed. Advanced semiconductor lasers based on the single-mode operating nature, such as wavelength tunable lasers and photonic integrated circuits are also reviewed.
35 citations
Cites background from "Room temperature c.w. operation of ..."
...During the end of July 1979, RT-CW operation of 1.5- m-wavelength GaInAsP–InP LD was obtained (reported at the Solid-State Device Meeting (SSDM’79) in 1979 [32], [33]) by adopting an antimeltback layer structure [31] which was used to prevent “a meltback” problem of long-wavelength GaInAsP material during the growth of InP cladding layer in a liquid-phase epitaxy (LPE)....
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...in a newspaper one week before SSDM’79 [34], Kawaguchi et al....
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...Akiba et al. (KDD) also succeeded in a RT-CW operation by using the anti-meltback layer structure and announced it in a newspaper one week before SSDM’79 [34], Kawaguchi et al. (NTT) and Kaminow et al.(Bell Labs.) also reported RT-CW operation of 1.5- m-wavelength LDs [35], [36]....
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TL;DR: In this article, a very low loss singlemode fiber with a minimum loss of 0.20 dB/km at a wavelength of 1.55 μm is attained; this loss reaches the ultimate lower loss limit of silica-based optical glass fibre.
Abstract: A very low loss single-mode fibre with a minimum loss of 0.20 dB/km at a wavelength of 1.55 μm is attained; this loss reaches the ultimate lower loss limit of silica-based optical glass fibre. The loss mechanism is also discussed.
644 citations