Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Abstract: Room‐temperature cw operation has been achieved for stripe‐geometry double‐heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid‐phase epitaxy on melt‐grown InP substrates, and stripes were defined by using proton bombardment to produce high‐resistance current‐confining regions.
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TL;DR: In this article, the use of ion bombardment for the creation of resistive layers in III-V semiconductors is reviewed, and two complementary methods to achieve the removal of free carriers in these materials are proposed.
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12 Mar 1999
TL;DR: A Fiber-Optic Chronology as discussed by the authors describes the history of fiber optic technology from the early 1900s to the early 1970s, including the development of the first commercially available fiber optic fiber.
Abstract: 1. Introduction: Building a City of Light 2. Guiding Light and Luminous Fountains (1841-1890) 3. Fibers of Glass 4. The Quest for Remote Viewing: Television and the Legacy of Sword Swallowers (1895-1940) 5. A Critical Insight: The Birth of the Clad Optical Fiber (1950-1955) 6. 99 Percent Perspiration: The Birth of an Industry (1954-1960) 7. A Vision of the Future: Communicating with Light (1880-1960) 8. The Laser Stimulates the Emission of New Ideas (1960-1969) 9. "The Only Thing Left Is Optical Fibers" (1960-1969) 10. Trying to Sell a Dream (1965-1970) 11. Breakthrough: The Clearest Glass in the World (1966-1972) 12. Recipes for Grains of Salt: The Semiconductor Laser (1962-1977) 13. A Demonstration for the Queen (1970-1975) 14. Three Generations in Five Years (1975-1983) 15. Submarine Cables: Covering the Ocean Floor with Glass (1970-1995) 16. The Last Mile: An Elusive Vision 17. Reflections on the City of Light Appendix A. Dramatis Personae: Cast of Characters Appendix B. A Fiber-Optic Chronology
241 citations
TL;DR: In this paper, a comparison of the photoluminescent (PL) intensities of n-type InP and GaAs at room temperature was made, and the effect of surface recombination velocity S on the PL intensity was evaluated numerically.
Abstract: A comparison was made of the photoluminescent (PL) intensities of n‐type InP and GaAs at room temperature. The PL intensity for InP was over 100 times greater than for comparably doped GaAs. The effect of surface recombination velocity S on the PL intensity was evaluated numerically. When this evaluation is applied to the PL intensity ratios of n‐type InP and GaAs it shows that S for n‐type InP is sufficiently small to eliminate significant influence of nonradiative surface recombination on the observed PL intensity.
230 citations
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TL;DR: In this paper, a double-heterostructure GaAs−Alx Ga1−x As injection laser which operates continuously at heat-sink temperatures as high as 311°K has been fabricated by liquid phase epitaxy.
Abstract: Double‐heterostructure GaAs–Alx Ga1−x As injection lasers which operate continuously at heat‐sink temperatures as high as 311°K have been fabricated by liquid‐phase epitaxy. Thresh‐olds for square diodes as low as 100 A/cm2 and for Fabry‐Perot diodes as low as 1600 A/cm2 have been obtained. Some details of preparation and properties are given.
593 citations
TL;DR: The material dispersion of optical fibres having cores of silica or phosphosilicate glass falls to zero at a wavelength between 1.2 and 1.3 µm as mentioned in this paper.
Abstract: The material dispersion of optical fibres having cores of silica or phosphosilicate glass falls to zero at a wavelength between 1.2 and 1.3µm. A considerable increase in bandwidth can be obtained, especially with an l.e.d. source, by operation in this region.
280 citations
TL;DR: In this paper, four different methods of LPE growth are compared: supercooling, step cooling, equilibrium cooling, and two-phase-solution (2PSS) techniques, and the results show that the smoothest layers were obtained by the super cooling and step cooling techniques, the roughest by the 2PSS method.
217 citations
TL;DR: In this paper, the composition dependence of the room-temperature bandgap (Eg) and lattice constant (ao) in the pseudobinary GayIn1-yAs, GayIn 1-yP, GaAsxPl-x, and InAsxpl-x systems have been derived.
Abstract: Published data for the composition dependence of the room-temperature bandgap (Eg) and lattice constant (ao) in the pseudobinary GayIn1-yAs, GayIn1-yP, GaAsxPl-x, and InAsxPl-x systems have been used to derive the following equations for the quaternary GayInl-yAsx Pl-x, alloys:
$$\begin{gathered} a_o ({\AA}) = 5.87 + 0.18x - 0.42y + 0.02xy \hfill \\ E_g (eV) = 1.35 - x + 1.4y - 0.33xy - (0.758 - 0.28x)y(1 - y) \hfill \\ - (0.101 + 0.109y) x(1 - x). \hfill \\ \end{gathered} $$
197 citations
01 Jun 1972
TL;DR: In this article, a method of defining the active region of stripe-geometry junction lasers by proton-bombardment-induced high-resistivity layers is described, which yields more reproducible mode patterns and lower threshold currents than the previously used oxide insulation.
Abstract: A method of defining the active region of stripe-geometry junction lasers by proton-bombardment-induced high-resistivity layers is described. The method yields more reproducible mode patterns and lower threshold currents than the previously used oxide insulation. The improved lasers operated continuously at heat-sink temperatures up to 110°C.
163 citations