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Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure
TL;DR: In this article, the authors demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in a well-epitaxial all-van der Waals (vdW) heterostructure.
Abstract: The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary merits of high flexibility, easy controllability, and high heretointegrability, which is expected to promote the development of Moore's Law continuously. However, it is extremely challenging to realize magnetic switching with ultra-low power consumption at room temperature. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in a well-epitaxial all-van der Waals (vdW) heterostructure. The topological insulator Bi2Te3 not only helps to elevate the Curie temperature of Fe3GeTe2 (FGT) through interfacial exchange coupling but also works as a spin current source allowing to switch FGT at a low current density of 2.2 * 106 A cm2. A large SOT efficiency of 0.7 is measured at room temperature, and the thickness of FGT is further adjusted to reduce the influence of the thermal contribution on the second-harmonic signal. Furthermore, the temperature and thickness-dependent SOT efficiency prove that the large SOT in our system mainly originates from the nontrivial origin of topological materials. Our experiment has enabled an all-vdW SOT structure and lays a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future.
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TL;DR: In this article , the authors demonstrate that kinetics play an important role in the epitaxial growth of Fe 3 GeTe 2 (FGT) van der Waals (vdW) ferromagnetic fi lms by molecular beam epitaxy.
Abstract: : We demonstrate that kinetics play an important role in the epitaxial growth of Fe 3 GeTe 2 (FGT) van der Waals (vdW) ferromagnetic fi lms by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-de fi cient non-van-der-Waals phase (Fe 3 Ge 2 ) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT fi lms to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are con fi rmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdi ff usion from the underlayer, which paves the way for future studies of van der Waals epitaxy. of 5 K. Spin-polarized STM measurements utilized a Cr tip and an out-of-plane magnetic fi eld. We performed AHE and MCD measurements in an Oxford Spectromag magneto-optical cryostat. To obtain out-of-plane hysteresis loops, we applied a magnetic fi eld perpendicular to the surface of the sample. The AHE measurements were performed using lock-in detection at 987 Hz and an excitation current of 100 μ A (rms). For MCD measurements, we utilized a 100 μ W, 532 nm laser beam focused to a spot size of ∼ 150 μ m. The helicity of the incident beam was modulated at 50 kHz by a photoelastic modulator and the MCD of the re fl ectivity was measured using an ampli fi ed Si photodiode and lock-in detection. structural quality of the surface and interface. The excellent magnetic properties with square out-of-plane hysteresis loops is con fi rmed by AHE, MCD, and spin-polarized STM measurements. Our results reveal an important way to think about and optimize MBE growth, leading to potentially better 2D materials.
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TL;DR: Topological superconductors are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors and are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time reversal symmetry.
Abstract: Topological insulators are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time-reversal symmetry. These topological materials have been theoretically predicted and experimentally observed in a variety of systems, including HgTe quantum wells, BiSb alloys, and Bi2Te3 and Bi2Se3 crystals. Theoretical models, materials properties, and experimental results on two-dimensional and three-dimensional topological insulators are reviewed, and both the topological band theory and the topological field theory are discussed. Topological superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. The theory of topological superconductors is reviewed, in close analogy to the theory of topological insulators.
11,092 citations
TL;DR: In this paper, it is rigorously proved that at any nonzero temperature, a one- or two-dimensional isotropic spin-S$ Heisenberg model with finite-range exchange interaction can be neither ferromagnetic nor antiferromagnetic.
Abstract: It is rigorously proved that at any nonzero temperature, a one- or two-dimensional isotropic spin-$S$ Heisenberg model with finite-range exchange interaction can be neither ferromagnetic nor antiferromagnetic. The method of proof is capable of excluding a variety of types of ordering in one and two dimensions.
6,236 citations
TL;DR: Xu et al. as mentioned in this paper used magneto-optical Kerr effect microscopy to show that monolayer chromium triiodide (CrI3) is an Ising ferromagnet with out-of-plane spin orientation.
Abstract: Magneto-optical Kerr effect microscopy is used to show that monolayer chromium triiodide is an Ising ferromagnet with out-of-plane spin orientation. The question of what happens to the properties of a material when it is thinned down to atomic-scale thickness has for a long time been a largely hypothetical one. In the past decade, new experimental methods have made it possible to isolate and measure a range of two-dimensional structures, enabling many theoretical predictions to be tested. But it has been a particular challenge to observe intrinsic magnetic effects, which could shed light on the longstanding fundamental question of whether intrinsic long-range magnetic order can robustly exist in two dimensions. In this issue of Nature, two groups address this challenge and report ferromagnetism in atomically thin crystals. Xiang Zhang and colleagues measured atomic layers of Cr2Ge2Te6 and observed ferromagnetic ordering with a transition temperature that, unusually, can be controlled using small magnetic fields. Xiaodong Xu and colleagues measured atomic layers of CrI3 and observed ferromagnetic ordering that, remarkably, was suppressed in double layers of CrI3, but restored in triple layers. The two studies demonstrate a platform with which to test fundamental properties of purely two-dimensional magnets. Since the discovery of graphene1, the family of two-dimensional materials has grown, displaying a broad range of electronic properties. Recent additions include semiconductors with spin–valley coupling2, Ising superconductors3,4,5 that can be tuned into a quantum metal6, possible Mott insulators with tunable charge-density waves7, and topological semimetals with edge transport8,9. However, no two-dimensional crystal with intrinsic magnetism has yet been discovered10,11,12,13,14; such a crystal would be useful in many technologies from sensing to data storage15. Theoretically, magnetic order is prohibited in the two-dimensional isotropic Heisenberg model at finite temperatures by the Mermin–Wagner theorem16. Magnetic anisotropy removes this restriction, however, and enables, for instance, the occurrence of two-dimensional Ising ferromagnetism. Here we use magneto-optical Kerr effect microscopy to demonstrate that monolayer chromium triiodide (CrI3) is an Ising ferromagnet with out-of-plane spin orientation. Its Curie temperature of 45 kelvin is only slightly lower than that of the bulk crystal, 61 kelvin, which is consistent with a weak interlayer coupling. Moreover, our studies suggest a layer-dependent magnetic phase, highlighting thickness-dependent physical properties typical of van der Waals crystals17,18,19. Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect20, whereas in trilayer CrI3 the interlayer ferromagnetism observed in the bulk crystal is restored. This work creates opportunities for studying magnetism by harnessing the unusual features of atomically thin materials, such as electrical control for realizing magnetoelectronics12, and van der Waals engineering to produce interface phenomena15.
3,802 citations
TL;DR: In this paper, a giant spin Hall effect (SHE) in β-tantalum was shown to generate spin currents intense enough to induce spin-torque switching of ferromagnets at room temperature.
Abstract: Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.
3,330 citations
26 Apr 2017
TL;DR: In this paper, the authors reported the experimental discovery of intrinsic ferromagnetism in Cr 2 Ge 2 Te 6 atomic layers by scanning magneto-optic Kerr microscopy.
Abstract: We report the experimental discovery of intrinsic ferromagnetism in Cr 2 Ge 2 Te 6 atomic layers by scanning magneto-optic Kerr microscopy. In this 2D van der Waals ferromagnet, unprecedented control of transition temperature is realized via small magnetic fields.
3,215 citations