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Room-Temperature Fabricated Amorphous Ga2O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates

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TLDR
In this paper, a solution to the fabrication of amorphous Ga2O3 solar-blind photodetectors on rigid and flexible substrates at room temperature is reported.
Abstract
A solution to the fabrication of amorphous Ga2O3 solar-blind photodetectors on rigid and flexible substrates at room temperature is reported. A robust improvement in the response speed is achieved by delicately controlling the oxygen flux in the reactive radio frequency magnetron sputtering process. Temporal response measurements show that the detector on quartz has a fast decay time of 19.1 µs and a responsivity of 0.19 A W−1 as well, which are even better than those single crystal Ga2O3 counterparts prepared at high temperatures. X-ray photoelectron spectroscopy and current–voltage tests suggest that the reduced oxygen vacancy concentration and the increased Schottky barrier height jointly contribute to the faster response speed. Amorphous Ga2O3 solar-blind photodetector is further constructed on polyethylene naphthalate substrate. The flexible devices demonstrate similar photoresponse behavior as the rigid ones, and no significant degradation of the device performance is observed in bending states and fatigue tests. The results reveal the importance of finely tuned oxygen processing gas in promoting the device performance and the applicability of room-temperature synthesized amorphous Ga2O3 in fabrication of flexible solar-blind photodetectors.

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Journal ArticleDOI

A review of Ga2O3 materials, processing, and devices

TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI

Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction.

TL;DR: This study generates a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction that has a high UV/visible rejection ratio, and a fast photoresponse time of 18 ms without bias.
Journal ArticleDOI

Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

TL;DR: In this article, a comprehensive review of the applications of inorganic ultrawide-bandgap (UWBG) semiconductors for solar-blind DUV light detection in the past several decades is presented.
Journal ArticleDOI

Review of gallium-oxide-based solar-blind ultraviolet photodetectors

TL;DR: A comprehensive review of solar-blind photodetectors based on gallium oxide (Ga2O3) materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys is presented in this paper.
Journal ArticleDOI

Gallium oxide solar-blind ultraviolet photodetectors: a review

TL;DR: In this article, a comprehensive review on Ga2O3-based solar-blind UV photodetectors is provided, with a detailed introduction of the developmental process of material growth methods and device manufacturing in the past decade.
References
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High-Performance Flexible Broadband Photodetector Based on Organolead Halide Perovskite

TL;DR: In this article, the first organolead halide perovskite based broadband photodetector is demonstrated, with CH3NH3PbI3 film deposited on flexible ITO coated substrate.
Journal ArticleDOI

Preparation and characterization of flexible asymmetric supercapacitors based on transition-metal-oxide nanowire/single-walled carbon nanotube hybrid thin-film electrodes.

TL;DR: This work has successfully fabricated flexible asymmetric supercapacitors (ASCs) based on transition-metal-oxide nanowire/single-walled carbon nanotube (SWNT) hybrid thin-film electrodes, with advantages of mechanical flexibility, uniform layered structures, and mesoporous surface morphology.
Journal ArticleDOI

Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates

TL;DR: Theoretical modeling of the electronic structures indicates that the reduction of the effective mass at the valence band maximum (VBM) with decreasing sheet thickness enhances the carrier mobility of the GaS nanosheets, contributing to the high photocurrents.
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