Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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TLDR
A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.Abstract:
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers1. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H)2,3,4,5 and organic semiconductors2,6,7,8,9,10 have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V-1 s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6–9 cm2 V-1 s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.read more
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Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method
Yongbo Yuan,Gaurav Giri,Alexander L. Ayzner,Alexander L. Ayzner,Arjan P. Zoombelt,Stefan C. B. Mannsfeld,Jihua Chen,Dennis Nordlund,Michael F. Toney,Jinsong Huang,Zhenan Bao +10 more
TL;DR: The growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1] Benzothiophene (C8-BTBT) is described from a blended solution of C8- BTBT and polystyrene by using a novel off-centre spin-coating method, indicating their potential for transparent, high-performance organic electronics.
Journal ArticleDOI
3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array
Jae Kyeong Jeong,Jong Han Jeong,Jong Hyun Choi,Jang Soon Im,Sung Ho Kim,Hui Won Yang,Ki Nyeng Kang,Kwang Suk Kim,Tae Kyung Ahn,Hyun-Joong Chung,Min-Kyu Kim,Bon Seog Gu,Jin-Seong Park,Yeon-Gon Mo,Hye-Dong Kim,Ho Kyoon Chung +15 more
TL;DR: In this paper, a 121-inch WXGA active-matrix organic light emitting diode (AMOLED) display was demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an activematrix back plane.
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Mixed-dimensional van der Waals heterostructures
TL;DR: In this paper, a survey of mixed-dimensional van der Waals (vdw) heterostructures is presented, where 2D materials with non-2D materials adhere primarily through non-covalent interactions.
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Metal oxides for optoelectronic applications
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Journal ArticleDOI
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta,Masafumi Sano,Katsumi Abe,Toshiaki Aiba,Tohru Den,Hideya Kumomi,Kenji Nomura,Toshio Kamiya,Hideo Hosono +8 more
TL;DR: In this paper, a-IGZO channels were fabricated using amorphous indium gallium zinc oxide channels by rf-magnetron sputtering at room temperature.
References
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Journal ArticleDOI
P-type electrical conduction in transparent thin films of CuAlO2
TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.