Journal ArticleDOI
Room temperature ferromagnetic properties of (Ga, Mn)N
M. L. Reed,Nadia A. El-Masry,Hans H. Stadelmaier,M. K. Ritums,M. J. Reed,C. A. Parker,John C. Roberts,Salah M. Bedair +7 more
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TLDR
In this paper, the Curie temperature of Mn-doped GaN films has been obtained by varying the growth and annealing conditions of the GaN and they have been shown to have ferromagnetic behavior with hysteresis curves showing a coercivity of 100−500 Oe.Abstract:
Dilute magnetic semiconductor GaN with a Curie temperature above room temperature has been achieved by manganese doping. By varying the growth and annealing conditions of Mn-doped GaN we have identified Curie temperatures in the range of 228–370 K. These Mn-doped GaN films have ferromagnetic behavior with hysteresis curves showing a coercivity of 100–500 Oe. Structure characterization by x-ray diffraction and transmission electron microscopy indicated that the ferromagnetic properties are not a result of secondary magnetic phases.read more
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A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI
Wide band gap ferromagnetic semiconductors and oxides
Stephen J. Pearton,Cammy R. Abernathy,M. E. Overberg,G. T. Thaler,David P. Norton,Nikoleta Theodoropoulou,Arthur F. Hebard,Yun Daniel Park,Fan Ren,Jihyun Kim,Lynn A. Boatner +10 more
TL;DR: In this paper, a review focusing on promising candidate materials (such as GaN, GaP and ZnO) is presented, where the introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature.
Journal ArticleDOI
Ferromagnetic semiconductors
TL;DR: The current status and prospects of research on ferromagnetism in semiconductors are reviewed in this article, where the authors present a quantitative comparison between experimental and theoretical results for Mn-based III-V and II-VI compounds, showing that the current theory of the exchange interactions mediated by holes in the valence band describes correctly the values of Curie temperatures.
Journal ArticleDOI
Ferromagnetism of ZnO and GaN: A Review
C. Liu,F. Yun,Hadis Morkoç +2 more
TL;DR: In this article, a review of the recent progress in the theoretical and experimental studies of ZnO-and GaN-based DMSs is presented, focusing on the structural, optical, and magnetic properties of these materials.
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Properties of GaN and related compounds studied by means of Raman scattering
TL;DR: In the last decade, a rapid and significant development in Raman scattering experiments on GaN and related nitride compounds has been seen as discussed by the authors, where the Γ-point phonon frequencies have been identified for both cubic and hexagonal structures of binary compounds of GaN.
References
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Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
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Properties of ferromagnetic III–V semiconductors
TL;DR: In this article, the experimental and theoretical results on III-V-based ferromagnetic semiconductors ((In,Mn)As and (Ga, Mn)As) accumulated to date.
Journal ArticleDOI
Carrier-concentration-induced ferromagnetism in PbSnMnTe.
TL;DR: Mise en evidence de the nature paramagnetique du compose pour des concentrations de porteurs inferieures a 3•10 20 cm −3 and d'une transition brusque au ferromagnetisme, a basse temperature, pour des valeurs superieures.
Journal ArticleDOI
Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices
M. L. Reed,M. K. Ritums,Hans H. Stadelmaier,M. J. Reed,C. A. Parker,Salah M. Bedair,Nadia A. El-Masry +6 more
TL;DR: A new dilute magnetic semiconductor (Ga,Mn)N grown by metal organic chemical vapor deposition (MOCVD) is reported in this paper, where the direction of the easy axis and the Curie temperature varies with the growth conditions, the latter ranging from 38°C to 75°C Secondary ion mass spectroscopy (SIMS) confirms diffusion of Mn into the GaN to a depth of 380 A