Room temperature ferromagnetism in HfO2 films
TL;DR: In this article, HfO2 films were produced by sputter deposition in the substrate temperature (Ts) range of room temperature (RT)−300 C and their structural, magnetic, and electrical properties were evaluated.
Abstract: HfO2 films were produced by sputter deposition in the substrate temperature (Ts) range of room temperature (RT)−300 °C and their structural, magnetic, and electrical properties were evaluated. The results indicate that the HfO2 films crystallize in the monoclinic structure and are oriented along the (−111) direction. Magnetization measurements (300–1.8 K) evidence their RT ferromagnetism. The effect of Ts is significant on the magnetic moment (M) and coercivity (Hc). M and Hc values enhanced with increasing Ts due to formation of oxygen vacancies. Increase in the temperature from 150 to 300 K decreases Hc without any transition, indicating that the Curie temperature of HfO2 films is higher than RT. Electrical measurements indicate that the HfO2 films are semiconducting.
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TL;DR: Y-doped HfO2 nanopowders, produced by metathesis synthesis, exhibit ferromagnetism at room temperature as mentioned in this paper, and X-ray diffraction and Raman measurements have shown that Y doping is followed by increased ferromagnetic ordering because of the increased concentration of oxygen vacancies in different charge states.
19 citations
Cites background or result from "Room temperature ferromagnetism in ..."
...Having in mind theoretical calculations [7,36] and experimental observations [30–33] and knowing from the Raman and XPS results that Hf1 xYxO2 δ nanopowders are oxygen deficient, we concluded that the oxygen vacancies can be attributed to be the main source of ferromagnetism in undoped and Y-doped HfO2 nanopowders....
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...The experimental reports [30–33] confirmed the existence of RTFM in pure and doped hafnia films and clearly proved that the RTFM originates from the presence of oxygen vacancies....
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19 citations
TL;DR: In this article, monoclinic HfO2 nanorods with an average size of about 33.7 ± 3.1nm in length and 8.9µ± 0.7µnm in width were synthesized via a chemical solution method.
Abstract: Whether or not nanoscale HfO2 has ferromagnetism is a debatable issue. In this study, monoclinic HfO2 nanorods with an average size of about 33.7 ± 3.1 nm in length and 8.9 ± 0.7 nm in width were synthesized via a chemical solution method. In comparison with many HfO2 nanoparticles/nanoclusters synthesized by physical methods, the as-prepared HfO2 nanorods were characterized by their better crystallinity and anisotropic shape. Interestingly, although the pristine HfO2 nanorods showed overall paramagnetic characteristics, when the nanorods were annealed in reducing environment, they exhibited clear room-temperature ferromagnetism (RTFM). The observed RTFM probably resulted from oxygen vacancies generated in the annealing process. In the mean time, it is suggested that factors such as the dimension, specific shape, and crystallinity of the HfO2 materials also should not be ignored when correlating the occurrence of ferromagnetism with defects.
7 citations
TL;DR: In this article, a SiO 2 nanoarray with a hole-bridge structure was constructed using a modified Stober method, which was obtained through three-dimensional self-organization from a siO 2 aqueous suspension by vertical deposition.
7 citations
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Book•
01 Jan 1956
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Abstract: 1. Properties of X-rays. 2. Geometry of Crystals. 3. Diffraction I: Directions of Diffracted Beams. 4. Diffraction II: Intensities of Diffracted Beams. 5. Diffraction III: Non-Ideal Samples. 6. Laure Photographs. 7. Powder Photographs. 8. Diffractometer and Spectrometer. 9. Orientation and Quality of Single Crystals. 10. Structure of Polycrystalline Aggregates. 11. Determination of Crystal Structure. 12. Precise Parameter Measurements. 13. Phase-Diagram Determination. 14. Order-Disorder Transformation. 15. Chemical Analysis of X-ray Diffraction. 16. Chemical Analysis by X-ray Spectrometry. 17. Measurements of Residual Stress. 18. Polymers. 19. Small Angle Scatters. 20. Transmission Electron Microscope.
17,428 citations
TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Abstract: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.
9,158 citations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...
5,711 citations
TL;DR: Development of higher permittivity dielectrics for dynamic random-access memories serves to illustrate the magnitude of the now urgent problem of identifying alternatives to silicon dioxide for the gate dielectric in logic devices, such as the ubiquitous field-effect transistor.
Abstract: The silicon-based microelectronics industry is rapidly approaching a point where device fabrication can no longer be simply scaled to progressively smaller sizes. Technological decisions must now be made that will substantially alter the directions along which silicon devices continue to develop. One such challenge is the need for higher permittivity dielectrics to replace silicon dioxide, the properties of which have hitherto been instrumental to the industry's success. Considerable efforts have already been made to develop replacement dielectrics for dynamic random-access memories. These developments serve to illustrate the magnitude of the now urgent problem of identifying alternatives to silicon dioxide for the gate dielectric in logic devices, such as the ubiquitous field-effect transistor.
1,179 citations