Journal ArticleDOI
Room-temperature operation of GaInAsN/GaAs laser diodes in the 1.5 /spl mu/m range
M. Fischer,M. Reinhardt,Alfred Forchel +2 more
- Vol. 7, Iss: 2, pp 149-151
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TLDR
In this paper, the 1.5/spl mu/m wavelength region has been realized for fabricated ridge waveguide laser diodes (LDs) under pulsed condition up to record high temperatures of 80/spl deg/C resulting in an emission wavelength of 1540 nm.Abstract:
GaInAsN-GaAs double quantum-well (DQW) laser structures emitting in the 1.5-/spl mu/m range were grown by solid source molecular beam epitaxy using a radio frequency plasma source for nitrogen activation. Lasing operation in the 1.5-/spl mu/m wavelength region has been realized for fabricated ridge waveguide laser diodes (LDs) under pulsed condition up to record high temperatures of 80/spl deg/C resulting in an emission wavelength of 1540 nm. This is the highest emission wavelength for laser diode operation based on GaAs. In addition, to investigate the optical properties of the active region, photoluminescence studies of underlying GaInAsN-GaAs QW structures emitting at wavelengths up to 1.55 /spl mu/m are presented.read more
Citations
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Journal ArticleDOI
GaInNAs long-wavelength lasers: progress and challenges
TL;DR: In this article, the authors review both the materials challenges and progress in growth of the metastable GaInNAs alloys required to reach the 1.3-1.55 μm communication wavelengths and the challenges and advances in device design for both vertical-cavity surface-emitting lasers and higher power edge-EMitting lasers.
Journal ArticleDOI
Tunable long-wavelength vertical-cavity lasers: the engine of next generation optical networks?
TL;DR: The terrain of both materials and device technologies that are currently driving this optical revolution and on the future directions and if a single, all encompassing technology, the "Holy Grail," might be realized by any of the contenders are reviewed.
Journal ArticleDOI
GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy
Vincent Gambin,Wonill Ha,Mark A. Wistey,Homan Yuen,Seth R. Bank,Seongsin M. Kim,James S. Harris +6 more
TL;DR: In this paper, Sb was added to the GaInNAs quaternary to achieve longer luminescent wavelengths while maintaining high intensity, and three QW GaIn-NAsSb in-plane lasers were fabricated with room-temperature pulsed operation out to 1.49 /spl mu/m.
Journal ArticleDOI
Development of GaInNAsSb alloys : Growth, band structure, optical properties and applications
James S. Harris,Robert Kudrawiec,Homan Yuen,Seth R. Bank,Hopil Bae,Mark A. Wistey,David B. Jackrel,Evan Pickett,Tomas Sarmiento,Lynford L. Goddard,Vincenzo Lordi,T. Gugov +11 more
TL;DR: In this article, the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells is discussed and the growth challenges of GaInNAsSb alloys are discussed.
Journal ArticleDOI
Comparison of electronic band structure and optical transparency conditions of In x Ga 1 − x As 1 − y N y ∕ Ga As quantum wells calculated by 10-band, 8-band, and 6-band k ∙ p models
TL;DR: In this article, the authors investigated the electronic band structure and optical transparency conditions of a 10-band, 8-band and 6-band quantum well with different models and concluded that the reduction was due to the increased interaction between the conduction-band state and the nitrogen-related energy state, which weaken the optical transition matrix elements between valence band and conduction band.
References
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Journal ArticleDOI
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Journal ArticleDOI
GaInNAs: a novel material for long-wavelength semiconductor lasers
Masahiko Kondow,Takeshi Kitatani,Shinichi Nakatsuka,M.C. Larson,Kouji Nakahara,Yoshiaki Yazawa,Makoto Okai,Kazuhisa Uomi +7 more
TL;DR: In this paper, the authors used a gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source to grow a light-emitting material with a bandgap energy suitable for longwavelength laser diodes.
Journal ArticleDOI
1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
TL;DR: In this paper, a 1.3/spl mu/m continuous wave lasing operation was demonstrated in a GaInNAs quantum-well laser at room temperature, which was achieved by increasing the nitrogen content (up to 1%) in the quantum layer.
Journal ArticleDOI
Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 - 1.38 [micro sign]m
TL;DR: In this article, the authors applied optimized low-temperature metal organic vapour phase epitaxy (MOVPE) using the group V sources 1,1-dimethylhydrazine (UDMHy) in combination with tertiarybutylarsine (TBAs) to achieve record low threshold current densities of 0.18 and 0.16 W/A per facet, respectively, for 800 µm long broad area lasers emitting at 1.28 and 1.38 µm, respectively.
Journal ArticleDOI
High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
TL;DR: In this paper, the authors reported room temperature, continuous-wave operation at 13 /spl mu/m for InGaAsN triple quantum well lasers, with a slope efficiency of 059 W/A (output per two facets).