“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
TL;DR: In this article, temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition were performed.
Abstract: We report temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous emission behavior, specifically an S-shaped (decrease–increase–decrease) temperature dependence of the peak energy (Ep) for InGaN-related PL with increasing temperature: Ep redshifts in the temperature range of 10–70 K, blueshifts for 70–150 K, and redshifts again for 150–300 K with increasing temperature. In addition, when Ep redshifts, the spectral width is observed to narrow, while when Ep blueshifts, it broadens. From a study of the integrated PL intensity as a function of temperature, it is found that thermionic emission of photocarriers out of local potential minima into higher energy states within the wells is the dominant mechanism leading to the thermal quenching of the InGaN-related PL. We demonstrate that the temperature-induced S-shaped PL shift is caused by a change in the carrier dyna...
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TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Abstract: The Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%–15%) layers grown on GaN (0001) is measured by a photoluminescence technique. The samples vary in InN composition, thickness, and threading dislocation density. Throughout this sample set, the measured Auger coefficient ranges from 1.4×10−30to2.0×10−30cm6s−1. The authors argue that an Auger coefficient of this magnitude, combined with the high carrier densities reached in blue and green InGaN∕GaN (0001) quantum well light-emitting diodes (LEDs), is the reason why the maximum external quantum efficiency in these devices is observed at very low current densities. Thus, Auger recombination is the primary nonradiative path for carriers at typical LED operating currents and is the reason behind the drop in efficiency with increasing current even under room-temperature (short-pulsed, low-duty-factor) injection conditions.
1,124 citations
TL;DR: A new highly controllable method for fabricating high quality, air-stable phosphorene films with a designated number of layers ranging from a few down to monolayer, which could lead to new electronic and optoelectronic devices, such as electrically tunable, broadband near infrared lighting devices operating at room temperature.
Abstract: It has been a long-standing challenge to produce air-stable few- or monolayer samples of phosphorene because thin phosphorene films degrade rapidly in ambient conditions. Here we demonstrate a new highly controllable method for fabricating high quality, air-stable phosphorene films with a designated number of layers ranging from a few down to monolayer. Our approach involves the use of oxygen plasma dry etching to thin down thick-exfoliated phosphorene flakes, layer by layer with atomic precision. Moreover, in a stabilized phosphorene monolayer, we were able to precisely engineer defects for the first time, which led to efficient emission of photons at new frequencies in the near infrared at room temperature. In addition, we demonstrate the use of an electrostatic gate to tune the photon emission from the defects in a monolayer phosphorene. This could lead to new electronic and optoelectronic devices, such as electrically tunable, broadband near infrared lighting devices operating at room temperature.
450 citations
TL;DR: In this paper, the photoluminescence properties of ZnO nanoneedle arrays, grown on silicon substrate by electrodeposition, are studied over the temperatures from 10K to 300K.
Abstract: The photoluminescence properties of ZnO nanoneedle arrays, grown on silicon substrate by electrodeposition, are studied over the temperatures from 10K to 300K. There exist three emission bands in ultraviolet, violet, and green regions, respectively. With increasing temperature, these bands show different temperature dependences: A normal redshift for the ultraviolet emission, S-shaped shift for the violet emission, and blueshift for the green one. The origins of these three bands and their temperature-dependent shifts are explained based on defect levels (zinc interstitial and oxygen vacancy levels) and carrier localization effect at the defect levels in addition to band-gap shrinkage.
296 citations
TL;DR: In this paper, a graded-width InGaN/GaN quantum well was used to study a time-resolved photoluminescence (PL) at T = 8 K, where the well width continuously varies from ∼5.5 to 2.0 nm.
Abstract: Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is very well fitted by a calculation of the electron–hole recombination probability versus well width. The only fitting parameter is the electric field in the well, which we find equal to 2.45±0.25 MV/cm, in excellent agreement with experimental Stokes shifts for this type of samples.
220 citations
TL;DR: The spectroscopic properties of the core/shell nanoplatelets presented here strongly suggest that this new generation of objects will be an interesting alternative to spherical or rod-shaped nanocrystals.
Abstract: Free standing two-dimensional materials appear as a novel class of structures. Recently, the first colloidal two-dimensional heterostructures have been synthesized. These core/shell nanoplatelets are the first step toward colloidal quantum wells. Here, we study in detail the spectroscopic properties of this novel generation of colloidal nanoparticles. We show that core/shell CdSe/CdZnS nanoplatelets with 80% quantum yield can be obtained. The emission time trace of single core/shell nanoplatelets exhibits reduced blinking compared to core nanoplatelets with a two level emission time trace. At cryogenic temperatures, these nanoplatelets have a quantum yield close to 100% and a stable emission time trace. A solution of core/shell nanoplatelets has emission spectra with a full width half-maximum close to 20 nm, a value much lower than corresponding spherical or rod-shaped heterostructures. Using single particle spectroscopy, we show that the broadening of the emission spectra upon the shell deposition is not...
199 citations
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TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
4,451 citations
TL;DR: In this paper, the authors investigated the emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures by means of modulation spectroscopy and assigned the static electroluminescence peak to recombination of excitons localized at certain potential minima in the quantum well.
Abstract: Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum‐confinement Stark effect and band filling of the localized states by excitons.
1,089 citations
TL;DR: The luminous intensity of these green InGaN SQW LEDs (12 cd) was about 100 times higher than that of conventional green GaP LEDs (01 cd) as mentioned in this paper.
Abstract: Superbright green InGaN single quantum well (SQW) structure light-emitting diodes (LEDs) with a luminous intensity of 12 cd were fabricated The luminous intensity of these green InGaN SQW LEDs (12 cd) was about 100 times higher than that of conventional green GaP LEDs (01 cd) The output power, the external quantum efficiency, the peak wavelength and the full width at half-maximum of green SQW LEDs were 3 mW, 63%, 520 nm and 30 nm, respectively, at a forward current of 20 mA The p-AlGaN/InGaN/n-GaN structure of green InGaN SQW LEDs were grown by metalorganic chemical vapor deposition on sapphire subsutrates
1,048 citations
TL;DR: In this article, structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/In0.05Ga 0.95N (6 nm) multiple quantum wells.
Abstract: Structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/ In0.05Ga0.95N (6 nm) multiple quantum wells, by employing transmission electron microscopy and energy-dispersive x-ray microanalysis, both of which are assessed from the cross-sectional direction. It was found that the contrast of light and shade in the well layers corresponds to the difference in In composition. The main radiative recombination was attributed to excitons localized at deep traps which probably originate from the In-rich region in the wells acting as quantum dots. Photopumped lasing was observed at the high energy side of the main spontaneous emission bands.
850 citations
TL;DR: The fundamental relationship between radiative lifetime and spectral linewidth of freeexcitons is demonstrated theoretically and experimentally for quasi 2D excitons in GaAs/AlGaAs quantum wells.
Abstract: The fundamental relationship between radiative lifetime and spectral linewidth of free excitons is demonstrated theoretically and experimentally for quasi 2D excitons in GaAs/AlGaAs quantum wells.
820 citations