Journal ArticleDOI
Sb-Doped $p$ -MgZnO/ $n$ -Si Heterojunction UV Photodetector Fabricated by Dual Ion Beam Sputtering
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TLDR
In this paper, a dual ion beam sputtering-based heterojunction ultraviolet photodetectors with peak response of 0.35 at ± 4 V and 0.32 A/W at -30 V were fabricated.Abstract:
Sb-doped p-Mg
0.1
Zn
0.9
O/n-Si-based heterojunction ultraviolet photodetectors were fabricated using dual ion beam sputtering. Current-Voltage measurements showed good rectifying behavior in fabricated devices with rectifying ratio as high as 251.35 at ± 4 V. The detectors exhibited good ultraviolet spectral response having peak responsivity of 0.025 A/W (at 310 nm) and 0.32 A/W (at 320 nm) at -30 V. The values of peak responsivity and external quantum efficiency increased from 1.7 mA/W and 0.75% (at 0 V) to 0.32 A/W and 134.26% (at -30 V), respectively. The value of detectivity of heterojunction devices was calculated to be 3.65 × 10
11
cm · Hz
1/2
·W
-1
at -5 V.read more
Citations
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Journal ArticleDOI
Ga-doped ZnO nanorod scaffold for high-performance, hole-transport-layer-free, self-powered CH3NH3PbI3 perovskite photodetectors
TL;DR: In this paper, the use of aligned one-dimensional nanostructures as scaffolds in organic-inorganic hybrid perovskite photodetectors has attracted significant attention due to their large surface area-to-volume ratio and efficient electron transport capability in the radial direction.
Journal ArticleDOI
High-Detectivity β -Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection
Shunjie Yu,Xiaolong Zhao,Mengfan Ding,Pengju Tan,Xiaohu Hou,Zhongfang Zhang,Wenxiang Mu,Zhitai Jia,Xutang Tao,Guangwei Xu,Shibing Long +10 more
TL;DR: In this article, a high-performance solar-blind phototransistor based on N2-annealed Ga2O3 microflakes for weak light detection was presented, which exhibits an ultra-low dark current of 27 fA, a high external quantum efficiency of $8.36\times 10^{7}$ %, a photo-to-dark-current ratio of $1.08\times 8.5$ A/W, a low power consumption of 2.92 pW, and a narrow-band response with a cut off wavelength of
Journal ArticleDOI
High Responsivity Mg x Zn 1– x O Based Ultraviolet Photodetector Fabricated by Dual Ion Beam Sputtering
TL;DR: In this article, the performance of fabricated photodetectors was studied by current voltage, spectral photoresponse, and temporal response measurements, and the values of peak responsivity were 0.4, 0.15 and 0.20, respectively.
Journal ArticleDOI
Au/GLAD-SnO 2 nanowire array-based fast response Schottky UV detector
Priyanka Chetri,Jay Chandra Dhar +1 more
TL;DR: In this article, the authors have demonstrated a UV photodetector based on SnO2 nanowire (NW) arrays fabricated using a catalytic free and controlled growth process called glancing angle deposition technique.
Journal ArticleDOI
High-Performance β -Ga 2 O 3 Solar-Blind Photodetector With Extremely Low Working Voltage
Chen Chen,Xiaolong Zhao,Xiaohu Hou,Shunjie Yu,Rui Chen,Xuanze Zhou,Pengju Tan,Qi Liu,Wenxiang Mu,Zhitai Jia,Guangwei Xu,Xutang Tao,Shibing Long +12 more
Abstract: The Ga2O3 solar-blind photodetectors (SBPDs) face the tradeoff between power consumption ( $P_{\text {C}}$ ) and photoresponse performance. Here, an ultrasensitive two-terminal photodetector based on $\boldsymbol {\beta }$ -Ga2O3 microflake with extremely-low working voltage and ${P}_{\text {C}}$ was achieved. At a working voltage of 2 V and ${P}_{\text {C}}$ of 10 fW, the Ga2O3 SBPD exhibits superexcellent photodetection performance, including a responsivity ( ${R}$ ) of ${2.3}\,\,\times \,\,{10}^{{5}}\text{A}$ /W, a detectivity ( ${D}^{ \boldsymbol {\ast }}$ ) of ${3.5}\,\,\times \,\,{10}^{{18}}$ Jones, a photo-to-dark-current ratio ( PDCR ) of ${3.2}\,\,\times \,\,{10}^{{8}}$ , and an ultra-low dark current ( ${I}_{\text {dark}}$ ) of 5 fA. Strikingly, the device keeps satisfactory performance at ultralow working voltage of 0.01 V, including a ${P}_{\text {C}}$ of 0.05 fW, a ${R}$ of ${2.4}\,\,\times \,\,{10}^{{3}}$ A/W, a ${D}^{ \boldsymbol {\ast }}$ of ${5.6}\,\,\times \,\,{10}^{{16}}$ Jones, and a PDCR of ${3.4}\,\,\times \,\,{10}^{{6}}$ . The superior solar-blind sensitivity makes it the most excellent Ga2O3 detector towards high-performance and low- $P_{\text {C}}$ SBPD applications.
References
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Journal ArticleDOI
Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide.
Sukit Limpijumnong,Sukit Limpijumnong,Shengbai Zhang,Su-Huai Wei,Chul Hong Park,Chul Hong Park +5 more
TL;DR: Based on first-principles calculations, a model for large-size-mismatched group-V dopants in ZnO agrees with the recent observations that both As and Sb have low acceptor-ionization energies and that to obtain p-type Zn O requires O-rich growth or annealing conditions.
Journal ArticleDOI
Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films
TL;DR: In this paper, the authors reported on the realization of wide band gap (5-6 eV), single-phase, metastable, and epitaxial MgxZn1−xO thin-film alloys grown on sapphire by pulsed laser deposition.
Journal ArticleDOI
MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range
TL;DR: A series of MgxZn1−xO thin films has been prepared by metalorganic chemical vapor deposition and metal-semiconductor-metal structured ultraviolet photodetectors are fabricated from these films as discussed by the authors.
Journal ArticleDOI
Dual-band MgZnO ultraviolet photodetector integrated with Si
TL;DR: In this paper, a dual-band ultraviolet photodetector was constructed by growing high quality MgxZn1−xO layers on Si substrate with molecular beam epitaxy.
Journal ArticleDOI
Ultraviolet photodetector based on a MgZnO film grown by radio-frequency magnetron sputtering.
Yanmin Zhao,Jiying Zhang,Dayong Jiang,Chongxin Shan,Zhenzhong Zhang,Bin Yao,Dongxu Zhao,Dezhen Shen +7 more
TL;DR: The metal-semiconductor-metal ultraviolet (UV) photodetector was fabricated on the Mg( 0.47)Zn(0.53)O layer grown by radio-frequency magnetron cosputtering and it was found that the rise time is 10 ns and the fall time is 30 ns, the reason for the short response time is related to the Schottky structure.